Wafer-size growth of 2D layered SnSe films for UV-Visible-NIR photodetector arrays with high responsitivity

Hao, Lanzhong; Du, Yongjun; Wang, Zegao; Wu, Yupeng; Xu, Hanyang; Dong, Shichang; Liu, Hui; Liu, Yunjie; Xue, Qingzhong; Han, Zhongying; Yan, Keyou; Dong, Mingdong

doi:10.1039/d0nr00319k

Cited by 67 publications

(48 citation statements)

References 49 publications

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“…By adjusting the grating period (400 ~ 1000 nm) of Mo 2 C, a broad-spectrum response of light (655 ~ 1200 nm) can be achieved. The results show that the photodetector has high responsivity (R > 10 3 A W −1 ) and bright-dark current ratio (> 10 2 ) in a wide spectral range (405 ~ 1310 nm), which is similar with that of transition metal dichalcogenides [201][202][203].…”

Section: Optoelectronic Devicesmentioning

confidence: 62%

Recent Progress in Emerging Two-Dimensional Transition Metal Carbides

et al. 2021

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As a new member in two-dimensional materials family, transition metal carbides (TMCs) have many excellent properties, such as chemical stability, in-plane anisotropy, high conductivity and flexibility, and remarkable energy conversation efficiency, which predispose them for promising applications as transparent electrode, flexible electronics, broadband photodetectors and battery electrodes. However, up to now, their device applications are in the early stage, especially because their controllable synthesis is still a great challenge. This review systematically summarized the state-of-the-art research in this rapidly developing field with particular focus on structure, property, synthesis and applicability of TMCs. Finally, the current challenges and future perspectives are outlined for the application of 2D TMCs.

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Section: Optoelectronic Devicesmentioning

confidence: 62%

Recent Progress in Emerging Two-Dimensional Transition Metal Carbides

et al. 2021

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“…fabricated a broadband photodetector based on SnSe film, exhibiting a high detectivity of 7.6 × 10 11 Jones with ≈1.83 s response time. [ 14 ] Lan et al. proposed a highly responsive (950 A W ‐1 ) UV–vis broadband photodetectors based on WS 2 ‐graphene heterostructures with 91 s response time.…”

Section: Introductionmentioning

confidence: 99%

Wafer‐Scale Growth of Vertical‐Structured SnSe₂ Nanosheets for Highly Sensitive, Fast‐Response UV–Vis–NIR Broadband Photodetectors

Chen

Xiong

et al. 2021

Advanced Optical Materials

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Owing to the strong light–matter interactions, 2D semiconducting thin films have shown their great potential in the development of high‐performance ultraviolet–visible–near infrared (UV–Vis–NIR) broadband photodetectors (PDs). However, the planar 2D semiconducting thin films via conventional growth method are often in the form of isolated flakes and/or suffering from low absorption efficiency of light, which hinders the UV–Vis–NIR optoelectronics from widespread applications. Herein are reported high‐performance nonplanar UV–Vis–NIR broadband PD arrays, based on wafer‐scale, vertical‐structured SnSe2 nanosheet arrays (NSAs) via low‐temperature molecular beam epitaxy method. The vertical‐structured SnSe2 NSAs possess light absorption efficiency of >90% covering the wave range from 340 to 650 nm. Benefiting from the excellent light trapping ability and uniformity of waferscaled SnSe2 NSAs as well as relatively short channel, the broadband PD arrays exhibit superior comprehensive performance. They achieve a high responsivity of 31.94 A W‐1, fast speed (≈63 μs), and high uniformity. In addition, the responsivity of the broadband PD arrays is further improved via Zn‐doping technique.

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“…EQE describes the ratio of the number of outgoing free electrons to that of the impinging photons. EQE can be extracted from the equation [40] EQE ¼…”

Section: Resultsmentioning

confidence: 99%

Enhanced Photoresponse in GeSe‐Based Phototransistors by Ferroelectric Gating

Zhao

et al. 2021

Physica Rapid Research Ltrs

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GeSe, a black phosphorus analogue, has great potential in the applications of optoelectronic devices due to its distinct optical properties and air stability. Developing techniques that can boost the photoresponsivity of GeSe-based photodetectors is essential to promoting their practical applications. Herein, ferroelectric PbZr x Ti 1Àx O 3 (PZT) gating is introduced as an effective method to enhance the performance of GeSe-based transistors. Comparative study on the performance of conventional Si/SiO 2 -and PZT-gated GeSe phototransistors demonstrates a 3.1 times increase in photoresponsivity under zero gate voltage by ferroelectric gating. Furthermore, the PZT-gated photodetector shows a rise time of 52 ms and a maximal external quantum efficiency (EQE) of 45% across the visible and near-infrared range. These results indicate that ferroelectric gating is a promising methodology to enhance the performance of GeSe-based photodetectors. This work paves a new pathway toward developing highperformance photodetectors.

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Wafer-size growth of 2D layered SnSe films for UV-Visible-NIR photodetector arrays with high responsitivity

Abstract: Wafer-size SnSe thin films with high uniformity and high crystal quality were grown by magnetron sputtering technique, and exhibit a highly sensitive to a broadband wavelength with high responsivity of 277.3 AW−1 and detectivity of 7.6 × 1011 Jones.

Cited by 67 publications

References 49 publications

Recent Progress in Emerging Two-Dimensional Transition Metal Carbides

Recent Progress in Emerging Two-Dimensional Transition Metal Carbides

Wafer‐Scale Growth of Vertical‐Structured SnSe₂ Nanosheets for Highly Sensitive, Fast‐Response UV–Vis–NIR Broadband Photodetectors

Enhanced Photoresponse in GeSe‐Based Phototransistors by Ferroelectric Gating

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Wafer-size growth of 2D layered SnSe films for UV-Visible-NIR photodetector arrays with high responsitivity

Abstract: Wafer-size SnSe thin films with high uniformity and high crystal quality were grown by magnetron sputtering technique, and exhibit a highly sensitive to a broadband wavelength with high responsivity of 277.3 AW−1 and detectivity of 7.6 × 1011 Jones.

Cited by 67 publications

References 49 publications

Recent Progress in Emerging Two-Dimensional Transition Metal Carbides

Recent Progress in Emerging Two-Dimensional Transition Metal Carbides

Wafer‐Scale Growth of Vertical‐Structured SnSe2 Nanosheets for Highly Sensitive, Fast‐Response UV–Vis–NIR Broadband Photodetectors

Enhanced Photoresponse in GeSe‐Based Phototransistors by Ferroelectric Gating

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Wafer‐Scale Growth of Vertical‐Structured SnSe₂ Nanosheets for Highly Sensitive, Fast‐Response UV–Vis–NIR Broadband Photodetectors