Wafer-Sized Ultrathin Gallium and Indium Nitride Nanosheets through the Ammonolysis of Liquid Metal Derived Oxides

Abstract

We report the synthesis of centimeter sized ultrathin GaN and InN. The synthesis relies on the ammonolysis of liquid metal derived two-dimensional (2D) oxide sheets that were squeeze-transferred onto desired substrates. Wurtzite GaN nanosheets featured typical thicknesses of 1.3 nm, an optical bandgap of 3.5 eV and a carrier mobility of 21.5 cm 2 V −1 s −1 , while the InN featured a thickness of 2.0 nm. The deposited nanosheets were highly crystalline, grew along the (001) direction and featured a thickness of only three unit cells. The method provides a scalable approach for the integration of 2D morphologies of industrially important semiconductors into emerging electronics and optical devices.

Liquid Metals: A Novel Possibility of Fabricating 2D Metal Oxides

“…[ 68,74 ] This technique involves contacting the liquid metal droplet with a target substrate, as shown in Figure a. Various thin oxide sheets were obtained by utilizing the skin of liquid metals, such as Ga 2 O 3 , [ 69,70,75–77 ] Bi 2 O 3 , [ 57 ] SnO, [ 53,58 ] and SnO 2 . [ 53 ] They can be utilized for next‐generation power, radio‐frequency electronics, ultraviolet photodetectors, field‐effect transistors, ferroelectric field‐effect memory, and complementary metal‐oxide‐semiconductor transistor devices, respectively.…”

Defect Structure Determination of GaN Films in GaN/AlN/Si Heterostructures by HR-TEM, XRD, and Slow Positrons Experiments

“…GaN is widely used in applications that require either n-type or p-type doped semiconductors for charge carrier injection in different devices [6]. New methods of obtaining Ga based films using liquid Ga [7,8] for reactive depositions have emerged in recent years and the fundamentals behind liquid metal enabled synthesis, along with the related surface functionalization aspects [9] showed promising possibilities concerning the growth of GaN thin films. Despite this, the fabrication of defect-free GaN films still possesses interest in some fields, such as field assisted positron moderation [10].…”

Printing of Quasi‐2D Semiconducting β‐Ga2O3 in Constructing Electronic Devices via Room‐Temperature Liquid Metal Oxide Skin

“…Kalantar‐zadeh's group paved the way to a much easier synthesis route relying on a unique reaction environment of gallium‐based liquid metals . In addition, the method to isolate the surface oxide skin based on a van der Waals force has inspired a novel way to acquire ultrathin gallium oxide layers, further enriching the synthesis strategy for other functional 2D materials, such as GaS, GaPO 4 , GaN, and InN . These 2D materials have many interesting characteristics different from those of bulk materials, such as piezoelectric and optical properties.…”