The
on-surface
synthesis of atomically flat N-doped
graphene on oxidized copper is presented. Besides circumventing the
almost standard use of metallic substrates for growth, this method
allows producing graphene with ∼2.0 at % N in a substitutional
configuration directly decoupled from the substrate. Angle-resolved
photoemission shows a linear energy-momentum dispersion where the
Dirac point lies at the Fermi level. Additionally, the N functional
centers can be selectively tailored in sp
2
substitutional
configuration by making use of a purpose-made molecular precursor:
dicyanopyrazophenanthroline (C
16
H
6
N
6
).