Wannier–Stark localization of electronic states in 4H-SiC MOS inversion layer

Abstract

The electronic states in 4H-SiC MOS inversion layers are
theoretically analyzed using the empirical pseudopotential method
(EPM). The analysis shows that the Wannier-Stark localization occurs,
which is absent in an effective mass approximation (EMA). The
Wannier-Stark localization modifies the electronic states in the MOS
inversion layers. A model is proposed to describe the in-plane
dispersion of subbands affected by the Wannier-Stark localization.
The differences between the EPM and EMA results for the subband
energy levels and the in-plane effective masses are discussed.