2013
DOI: 10.1109/tcpmt.2012.2228005
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Warpage Prediction and Experiments of Fan-Out Waferlevel Package During Encapsulation Process

Abstract: A waferlevel package (WLP) that has a flipchip form and uses thin-film redistribution with solder bumps to connect the package to the printed wiring board directly is discussed in this paper. A liquid molding compound is used for the encapsulation process. Since the thickness of the fan-out WLP is smaller than that in a traditional integrated circuit (IC) package, the fan-out WLP induces more serious warpage. Warpage plays an important role during the IC encapsulation process, and too large a warpage would not… Show more

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Cited by 65 publications
(3 citation statements)
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“…A mathematics pressure-volume-temperature (P-V-T) equation for epoxy molding compound [20] is employed to describe the intrinsic mechanism of volume change. The volume change, ∆V, was defined by the decrease in the height of a sample, ∆h, in the mold cavity.…”
Section: The Mathematical Model For Mold Flowmentioning
confidence: 99%
“…A mathematics pressure-volume-temperature (P-V-T) equation for epoxy molding compound [20] is employed to describe the intrinsic mechanism of volume change. The volume change, ∆V, was defined by the decrease in the height of a sample, ∆h, in the mold cavity.…”
Section: The Mathematical Model For Mold Flowmentioning
confidence: 99%
“…In RDL fabrication processes the wafer undergoes different high temperature process steps that result in reliability risks due to stresses induced in the wafer during fabrication. For example, during the RDL fabrication PI is cured at high temperature that results in stresses induced in the wafer due to cure shrinkage of the PI [4]. Simultaneously, thermal stress is also induced in the wafer due to coefficient of thermal expansion (CTE) mismatch between the different materials used in the RDL processing.…”
Section: Introductionmentioning
confidence: 99%
“…Simultaneously, thermal stress is also induced in the wafer due to coefficient of thermal expansion (CTE) mismatch between the different materials used in the RDL processing. These stresses might be high and result in large amount of wafer bow that affect handling of the wafer and subsequent processing steps on the wafer that can lead to reliability risks like delamination and passivation cracks [4]. Therefore, it is important to predict the wafer bow and limit the stress evolution for different films in the RDL.…”
Section: Introductionmentioning
confidence: 99%