Water adsorption effects of nitrate ion coordinated Al2O3 dielectric for high performance metal-oxide thin-film transistor

Park, Jee Ho; Kim, Kyongjun; Yoo, Young Bum; Park, Si Yun; Lim, Keon Hee; Lee, Keun Ho; Baik, Hong Koo; Kim, Youn Sang

doi:10.1039/c3tc31589d

Cited by 66 publications

(85 citation statements)

References 31 publications

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“…The effect of precursor solution solvent variation has already been reported elsewhere [6]. The electrical characteristics of AlO x capacitors produced with no fuel show a non-uniform capacitance variation at −3 to −2 V indicating the presence of organic residues within the film such as nitrate groups; these ions favour water adsorption leading to higher capacitance due to the high dielectric constant of water, as previously observed [6,29]. To improve film properties, when a non-combustion synthesis route is applied, either higher temperature or UV-assisted annealing is currently being used [26,30].…”

Section: Dielectric Oxidessupporting

confidence: 67%

Solution Combustion Synthesis: Applications in Oxide Electronics

Branquinho¹,

Santa²,

Carlos³

et al. 2016

Developments in Combustion Technology

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Oxide-based electronics have been well established as an alternative to silicon technology; however, typical processing requires complex, high-vacuum equipment, which is a major drawback, particularly when targeting low-cost applications. The possibility to deposit the materials by low-cost techniques such as inkjet printing has drawn tremendous interest in solution processible materials for electronic applications; however, high processing temperatures still required. To overcome this issue, solution combustion synthesis has been recently pursued. Taking advantage of the exothermic nature of the reaction as a source of energy for localized heating, the precursor solutions can be converted into oxides at lower process temperatures. Theoretically, this can be applied to any metal ions to produce the desired oxide, opening unlimited possibilities to materials' composition and combinations. Solution combustion synthesis has been applied for the production of semiconductor thin films based on ZnO, In 2 O 3 , SnO 2 and combinations of these oxides, and also for high κ dielectrics (Al 2 O 3 ). All of which are required for numerous electronic devices and applications such as fully oxide-based thin-film transistors (TFTs). The properties of produced thin films are highly dependent on the precursor solution characteristics; hence, the influence of several processing parameters; organic fuel, solvent and annealing temperature was studied. Although precursor solution degradation/oxide formation mechanisms are not yet fully understood, particularly for thin films, we demonstrate that high-performance devices are obtained with combustion solution-based metal oxide thin films. The results clearly show that solution combustion synthesis is becoming one of the most promising methods for low-temperature flexible electronics.

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Section: Dielectric Oxidessupporting

confidence: 67%

Solution Combustion Synthesis: Applications in Oxide Electronics

Branquinho¹,

Santa²,

Carlos³

et al. 2016

Developments in Combustion Technology

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“…This hydrolysis reaction releases many hydrogen ions H + that could stay incorporated in the film in the ways described above. The nitrate ions are not bonded to the hydroxide complexes but are rather dispersed and as recently reported, they can induce mobile H + ions 34,35. The films produced from nitrate precursors are therefore potentially rich in H + .…”

Section: Introductionmentioning

confidence: 75%

Electronic Structure of Low‐Temperature Solution‐Processed Amorphous Metal Oxide Semiconductors for Thin‐Film Transistor Applications

Socratous

Banger

Vaynzof

et al. 2015

Adv Funct Materials

190

115

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The electronic structure of low temperature, solution-processed indium–zinc oxide thin-film transistors is complex and remains insufficiently understood. As commonly observed, high device performance with mobility >1 cm2 V−1 s−1 is achievable after annealing in air above typically 250 °C but performance decreases rapidly when annealing temperatures ≤200 °C are used. Here, the electronic structure of low temperature, solution-processed oxide thin films as a function of annealing temperature and environment using a combination of X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, and photothermal deflection spectroscopy is investigated. The drop-off in performance at temperatures ≤200 °C to incomplete conversion of metal hydroxide species into the fully coordinated oxide is attributed. The effect of an additional vacuum annealing step, which is beneficial if performed for short times at low temperatures, but leads to catastrophic device failure if performed at too high temperatures or for too long is also investigated. Evidence is found that during vacuum annealing, the workfunction increases and a large concentration of sub-bandgap defect states (re)appears. These results demonstrate that good devices can only be achieved in low temperature, solution-processed oxides if a significant concentration of acceptor states below the conduction band minimum is compensated or passivated by shallow hydrogen and oxygen vacancy-induced donor levels.

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“…The capacitance values are shown as a function of voltage in Figure 8a-c. The dielectric properties of ZAO films with a ratio of Zr:Al = 1:1 and 1:3 show instability versus voltage, which should be attributed to the high content of the bonded oxygen, as more water was absorbed [44]. The relative dielectric constants were calculated on the base of the C-V curves.…”

Section: Designed Ratios Of Zr:al 3:1 1:1 1:3mentioning

confidence: 99%

Zirconium-Aluminum-Oxide Dielectric Layer with High Dielectric and Relatively Low Leakage Prepared by Spin-Coating and the Application in Thin-Film Transistor

et al. 2020

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In this paper, zirconium-aluminum-oxide (ZAO) dielectric layers were prepared by a solution method with intent to combine the high dielectric constant with a low leakage current density. As a result, dielectric layers with improved electrical properties as expected can be obtained by spin-coating the mixed precursor. The chemical and physical properties of the films were measured by thermogravimetric differential scanning calorimetry (TG-DSC), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and a UV spectrometer. It is observed that the oxygen defects and the hydroxide in the films are reduced with the addition of high-bond-energy zirconia, while the films can remain large optical bond gaps thanks to the presence of alumina. The metal-insulator-metal (MIM) devices were fabricated, and it was seen that with a molar ratio of Zr:Al = 3:1 and an annealing temperature of 500 • C, the dielectric layer afforded the highest dielectric constant of 21.1, as well as a relatively low leakage current of 2.5 × 10 −6 A/cm 2 @ 1 MV/cm. Furthermore, the indium-gallium-zinc oxide thin-film transistors (IGZO-TFTs) with an optimal ZAO dielectric layer were prepared by the solution method and a mobility of 14.89 cm 2 /Vs, and a threshold voltage swing of 0.11 V/dec and a 6.1 × 10 6 on/off ratio were achieved at an annealing temperature of 500 • C.

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Water adsorption effects of nitrate ion coordinated Al2O3 dielectric for high performance metal-oxide thin-film transistor

Cited by 66 publications

References 31 publications

Solution Combustion Synthesis: Applications in Oxide Electronics

Solution Combustion Synthesis: Applications in Oxide Electronics

Electronic Structure of Low‐Temperature Solution‐Processed Amorphous Metal Oxide Semiconductors for Thin‐Film Transistor Applications

Zirconium-Aluminum-Oxide Dielectric Layer with High Dielectric and Relatively Low Leakage Prepared by Spin-Coating and the Application in Thin-Film Transistor

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