Water engineering in lead free CsCu2I3 perovskite for high performance planar heterojunction photodetector applications

Bai, Kailei; Fan, Zihao; Zhao, Guocheng; He, Xiaoyue; Zhu, Zong-Hong; Pan, Shusheng; Ge, Juan; He, Chenguang

doi:10.1016/j.ceramint.2022.09.162

Cited by 14 publications

(9 citation statements)

References 66 publications

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“…They have been widely used in communication technology, scientific measurement, astronomy observation, fire monitoring, and biomedical research. − Si-based photodetectors possess an incomparable advantage because of their compatibility with the microelectronics industry . Si-based photodetectors are mainly used to detect visible and near-infrared (NIR) light, while compound semiconductors such as GaN are commonly used to detect ultraviolet (UV) light. , Nevertheless, the responsivity of most commercialized silicon photodetectors compatible with semiconductor technology remains at 0.7 A/W, , except for some silicon photodetectors − with a complex preparation process, high cost, and preparation conditions that are difficult to control.…”

Section: Introductionmentioning

confidence: 99%

“…5 Si-based photodetectors are mainly used to detect visible and near-infrared (NIR) light, 6 while compound semiconductors such as GaN are commonly used to detect ultraviolet (UV) light. 7,8 Nevertheless, the responsivity of most commercialized silicon photodetectors compatible with semiconductor technology remains at 0.7 A/ W, 9,10 except for some silicon photodetectors 11−14 with a complex preparation process, high cost, and preparation conditions that are difficult to control.…”

Section: ■ Introductionmentioning

confidence: 99%

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Surface Engineering in SnO₂/Si for High-Performance Broadband Photodetectors

Sun

et al. 2023

ACS Appl. Mater. Interfaces

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Silicon-based photodetectors are important optoelectronic devices in many fields. Many investigations have been conducted to improve the performance of silicon-based photodetectors, such as spectral responsivity and sensitivity in the ultraviolet band. In this study, we combine the surface structure engineering of silicon with wide-bandgap semiconductor SnO2 films to realize textured Si-based heterojunction photodetectors. The obtained SnO2/T-Si photodetectors exhibit high responsivity ranging from ultraviolet to near-infrared light. Under a bias voltage of 1 V, SnO2/T-Si photodetectors (PDs) with an inverted pyramid texture show the best performance, and the typical responsivities to ultraviolet, visible, and near-infrared light are 0.512, 0.538, 1.88 (800 nm, 67.7 μW/cm2) A/W@1 V, respectively. The photodetectors exhibit short rise and decay times of 18.07 and 29.16 ms, respectively. Our results demonstrate that SnO2/T-Si can serve as a high-performance broadband photodetector.

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Section: Introductionmentioning

confidence: 99%

Section: ■ Introductionmentioning

confidence: 99%

Surface Engineering in SnO₂/Si for High-Performance Broadband Photodetectors

Sun

et al. 2023

ACS Appl. Mater. Interfaces

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“…Finally, we fabricated patterned thin films for device applications. An attempt was reported to create an interface between CsCu 2 I 3 and CuI by partially decomposing CsCu 2 I 3 with water . However, the difficulty of morphology control is an obstacle for device applications.…”

Section: Discussionmentioning

confidence: 99%

“…An attempt was reported to create an interface between CsCu 2 I 3 and CuI by partially decomposing CsCu 2 I 3 with water. 41 However, the difficulty of morphology control is an obstacle for device applications. The RT-SSR of bilayered CsI and CuI is suitable to be applied to thin-film patterning with shadow masks for device fabrication.…”

Section: Solid-state Reaction Of Bilayered Cui and Csimentioning

confidence: 99%

Room-Temperature Solid-State Synthesis of Cs₃Cu₂I₅ Thin Films and Formation Mechanism for Its Unique Local Structure

et al. 2023

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Blue-emitting Cs 3 Cu 2 I 5 has attracted attention owing to its near-unity PL quantum yield and applications in DUV photodetectors and scintillators. Its PL properties originate from the unique local structure around the luminescent center, the [Cu 2 I 5 ] 3− polyhedron iodocuprate anion consisting of the edge-shared CuI 3 triangle and the CuI 4 tetrahedron dimer, which is isolated by Cs + ions. We found that solid-state reactions between CsI and CuI occur near room temperature (RT) to form Cs 3 Cu 2 I 5 and/or CsCu 2 I 3 phases. High-quality thin films of these phases were obtained by the sequential deposition of CuI and CsI by thermal evaporation. We elucidated that the formation of interstitial Cu + and the antisite of I − at the Cs + site in the CsI crystal through Cu + and I − diffusion results in the RT synthesis of Cs 3 Cu 2 I 5 . The unique structure formation of the luminescent center was revealed using a model based on the low packing density of the CsCl-type crystal structure, similar sizes of Cs + and I − ions, and the high diffusivity of Cu + . The self-aligned patterning of the luminous regions on thin films was demonstrated.

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“…[29] Jie Yang et al fabricated a deep-UV photodetector based on the CsCu 2 I 3 thin-film structure, and the device showed almost no response to 405 nm visible light but was sensitive to 265 and 365 nm light, demonstrating good UV detection capability. [24] Even though several methods for the preparation of CsCu 2 I 3 -based photodetectors have been reported so far, such as the antisolvent-assisted crystallization method mentioned above, [22][23][24]27,[29][30][31][32] as well as space-confined crystallization method, [33,34] pulsed laser deposition method, [35] and vacuum thermal evaporation method. [26] However, all these methods are suffering from the disadvantages of difficult control of crystal size and shape and random crystal orientation, which hinder their integrated optoelectronic applications.…”

Section: Introductionmentioning

confidence: 99%

Highly Responsive, Polarization‐Sensitive, Flexible, and Stable Photodetectors Based on Highly Aligned CsCu₂I₃ Nanowires

An,

Li,

Feng

et al. 2023

Advanced Optical Materials

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As a new inorganic lead‐free perovskite, cesium copper iodide (CsCu2I3) has attracted wide attention in the field of photodetectors due to its non‐toxicity, good air and thermal stability, and excellent optoelectronic properties. However, the random growth and disordered distribution of CsCu2I3 crystals during their preparation results in poor crystal quality, seriously limiting their applications. Highly ordered CsCu2I3 crystal formation with high crystal quality for high‐performance photodetectors remains a major challenge. Here, an ingenious nanoimprinting technology is utilized to obtain high‐performance photodetectors based on highly aligned CsCu2I3 nanowires (NWs). Owing to the high crystal quality, the photodetector exhibits excellent responsivity of 12.35 A W−1 (310 nm) and 89.73 mA W−1 (365 nm), respectively, as well as good polarization light detection with a dichroism ratio of up to 2.28. Additionally, the device on a flexible substrate retains its initial level of performance even after being bent 2000 times. Remarkably, the device exhibits superior stability and maintains excellent performance after being placed in the natural environment for 1 month without any encapsulation.

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Water engineering in lead free CsCu2I3 perovskite for high performance planar heterojunction photodetector applications

Cited by 14 publications

References 66 publications

Surface Engineering in SnO₂/Si for High-Performance Broadband Photodetectors

Surface Engineering in SnO₂/Si for High-Performance Broadband Photodetectors

Room-Temperature Solid-State Synthesis of Cs₃Cu₂I₅ Thin Films and Formation Mechanism for Its Unique Local Structure

Highly Responsive, Polarization‐Sensitive, Flexible, and Stable Photodetectors Based on Highly Aligned CsCu₂I₃ Nanowires

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Water engineering in lead free CsCu2I3 perovskite for high performance planar heterojunction photodetector applications

Cited by 14 publications

References 66 publications

Surface Engineering in SnO2/Si for High-Performance Broadband Photodetectors

Surface Engineering in SnO2/Si for High-Performance Broadband Photodetectors

Room-Temperature Solid-State Synthesis of Cs3Cu2I5 Thin Films and Formation Mechanism for Its Unique Local Structure

Highly Responsive, Polarization‐Sensitive, Flexible, and Stable Photodetectors Based on Highly Aligned CsCu2I3 Nanowires

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Product

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Surface Engineering in SnO₂/Si for High-Performance Broadband Photodetectors

Surface Engineering in SnO₂/Si for High-Performance Broadband Photodetectors

Room-Temperature Solid-State Synthesis of Cs₃Cu₂I₅ Thin Films and Formation Mechanism for Its Unique Local Structure

Highly Responsive, Polarization‐Sensitive, Flexible, and Stable Photodetectors Based on Highly Aligned CsCu₂I₃ Nanowires