2020
DOI: 10.1016/j.cap.2020.01.017
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Water vapor-induced structure modification of vertically-aligned carbon nanotube arrays and successive thin film coating for enhanced field emission properties

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Cited by 6 publications
(2 citation statements)
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“…Moreover, the I D /I G value increases from 1.17 for the as-synthesized CNTs to 1.41, due to the plasma treatment. Similar values were reported by A. Hawsawi et al, who used a similar exposure time and temperature for the water vapor plasma treatment of vertically aligned CNTs, for the subsequent deposition of W and SiO 2 particles to improve their field emission characteristics [28]. Herein, the plasma-induced defects acted as anchoring sites for the next PED.…”
Section: Resultssupporting
confidence: 77%
“…Moreover, the I D /I G value increases from 1.17 for the as-synthesized CNTs to 1.41, due to the plasma treatment. Similar values were reported by A. Hawsawi et al, who used a similar exposure time and temperature for the water vapor plasma treatment of vertically aligned CNTs, for the subsequent deposition of W and SiO 2 particles to improve their field emission characteristics [28]. Herein, the plasma-induced defects acted as anchoring sites for the next PED.…”
Section: Resultssupporting
confidence: 77%
“…Because FE phenomenon is based on electron tunneling, we estimated field enhancement factor ( β ) using the Fowler-Nordheim (FN) plot from Figure 8 . The β can be calculated as following relation [ 17 , 18 ]. where, B is the FN constant (6.83 × 10 3 V eV −3/2 μm −1 ), φ is a work function of CNTs (5 eV) [ 19 ], D is distance between CNTs and anode (500 μm) and slope of the F–N plot.…”
Section: Resultsmentioning
confidence: 99%