Wave approach for noise modeling of gallium nitride high electron‐mobility transistors

Abstract

The wave approach has appeared as a very efficient tool for modeling as well as for measurements of noise parameters of microwave transistors. Having in mind the attractiveness of transistors in gallium nitride technology in modern communication systems, where it is very important to keep the noise on a low level and, thus, to have accurate transistor noise models, in this paper, the wave approach is applied for the noise modeling of high electron-mobility transistor in gallium nitride technology. The noise wave representation of the transistor intrinsic circuit noise is used, where the noise wave parameters are modeled by exploiting the artificial neural networks. The modeling results, compared with the measured data and with those obtained by the conventional noise equivalent circuit model, provide a verification of the developed model accuracy.

Investigation of gate induced noise in E‐mode GaN MOS‐HEMT and its effect on noise parameters

“…Although a lot of research is in progresses in the field of theoretical and numerical DC characteristics for GaN HEMT, but still, the research on noise characteristics and modeling of the device is in the phase of limitation. Different high‐frequency noise models for GaN HEMTs are available in different literatures . But to the best of author's knowledge, high‐frequency noise model for GaN MOS‐HEMT is still not available.…”

“…Different high-frequency noise models for GaN HEMTs are available in different literatures. [12][13][14][15][16][17] But to the best of author's knowledge, high-frequency noise model for GaN MOS-HEMT is still not available. So, in this paper, the main objective of the authors is to characterize and model different high-frequency noise parameters of E-mode GaN MOS-HEMT.…”

Comparative Analysis of Different Cad Methods for Extraction of the Hemt Noise Wave Model Parameters

“…Most of the proposed transistor noise models represent the noise generated in a component using equivalent voltage and/or current sources [3,[5][6]. However, at microwave frequencies, a wave representation of noise looks attractive since it allows the use of scattering matrices for the noise computations, leading to advantages in Computer-Aided Design (CAD) of microwave networks [2,[7][8][9][10][11][12][13][14][15][16][17][18]. The power of the wave representation of noise lies in its ability to treat the network noise in terms of incident and reflected waves, which is compatible with the scattering matrix description of microwave networks.…”

On-wafer noise parameters measurement using an extended six-port network and conventional noise figure analyzer

“…Works appearing in [12, 15–21] and the most recent [22] are significant contributions as far as the noise wave technique for the extraction of noise parameters is concerned. In one of the early works in this regard, Meys [12] using an almost lossless source of varying phases and a matched load in a simple setup was able to determine the noise temperatures of three sets of wave parameters in addition to the phase of the cross-correlated power spectrum, that completely characterize the noise properties of a linear two-port.…”