Waveform characterization of microwave power heterojunction bipolar transistors

Wei, Chang; Lan, Y.; Hwang, J.C.M.; Ho, W.J.; Higgins, J.A.

doi:10.1109/mwsym.1995.406195

Cited by 12 publications

(4 citation statements)

References 6 publications

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“…As for HBT' s, the intrinsic base-emitter and base-collector waveforms of an HBT have been measured and compared to that predicted by a conventional model [8]. This paper expands on [8] by reporting a modified modeling and characterization technique in detail. In particular, the measured waveforms are directly used to extract the nonlinear characteristics of the intrinsic HBT junctions.…”

Section: Introductionmentioning

confidence: 99%

Waveform-based modeling and characterization of microwave power heterojunction bipolar transistors

Wei

Lan

Hwang

et al. 1995

IEEE Trans. Microwave Theory Techn.

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A waveform measurement technique has been successfully used to extract the large-signal nonlinear characteristics of microwave power heterojunction bipolar transistors. The extracted model parameters were compared to those extracted from dc and small-signal parameters in a conventional manner. It was found that, for high input drive conditions, the present model predicts a much longer collector transit time than the conventional model. Therefore, the present model is more consistent with the physical structure of the transistors and more suitable for evaluating future design improvement.

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Section: Introductionmentioning

confidence: 99%

Waveform-based modeling and characterization of microwave power heterojunction bipolar transistors

Wei

Lan

Hwang

et al. 1995

IEEE Trans. Microwave Theory Techn.

Self Cite

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“…RECENT development in microwave metrology is a measurement system that not only enables the measurement of the absolute amplitude of harmonics, and if present, intermodulation products, but also can measure the corresponding phases [1]- [5]. These so-called "vectorial large-signal measurements" have triggered researchers worldwide to investigate the implications of the additional measurement information (being the phase) on the ease and accuracy of nonlinear model generation.…”

mentioning

confidence: 99%

Straightforward and accurate nonlinear device model parameter-estimation method based on vectorial large-signal measurements

Schreurs

Verspecht

Vandenberghe

et al. 2002

IEEE Trans. Microwave Theory Techn.

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Abstract-To model nonlinear device behavior at microwave frequencies, accurate large-signal models are required. However, the standard procedure to estimate model parameters is often cumbersome, as it involves several measurement systems (dc, vector network analyzer, etc.). Therefore, we propose a new nonlinear modeling technique, which reduces the complexity of the model generation tremendously and only requires full two-port vectorial large-signal measurements. This paper reports on the results obtained with this new modeling technique applied to both empirical and artificial-neural-network device models. Experimental results are given for high electron-mobility transistors and MOSFETs. We also show that realistic signal excitations can easily be included in the optimization process.

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“…The device's charge and current sources are generally indirectly determined by DC, low-frequency C-V and vectorial small-signal, S-parameter, measurements. During the past years, several prototype measurement systems have been developed to perform vectorial large-signal measurements [ 11- [4]. They provide information on both amplitude and phase of the spectral components of large signals, whereas conventional measurement systems only provide information on the magnitude.…”

Section: Introductionmentioning

confidence: 99%

Evaluation of non-linear modelling techniques for MOSFETs based on vectorial large-signal measurements

Schreurs

Vandenberghe²,

Carchon³

et al.

2000 IEEE International Symposium on Circuits and Systems. Emerging Technologies for the 21st Century. Proceedings (IEEE Cat No

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Non-linear MOSFET models are mostly derived indirectly from DC, low-frequency C-V and/or high-frequency S-parameter measurements. We developed non-linear modelling techniques that determine the state functions of MOSFETs directly from high-frequency vectorial large-signal measurements and thus eliminate the small-signal detour. Two methods are proposed to determine these state functions: parameter optimisation and extraction. Both approaches yield accurate results. Hence, the main difference is the application range. The method of parameter optimisation quickly generates accurate non-linear models for particular applications, while the extraction method is preferred to determine general non-linear models.

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Waveform characterization of microwave power heterojunction bipolar transistors

Cited by 12 publications

References 6 publications

Waveform-based modeling and characterization of microwave power heterojunction bipolar transistors

Waveform-based modeling and characterization of microwave power heterojunction bipolar transistors

Straightforward and accurate nonlinear device model parameter-estimation method based on vectorial large-signal measurements

Evaluation of non-linear modelling techniques for MOSFETs based on vectorial large-signal measurements

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