Waveguide effect in high-NA EUV lithography: The key to extending EUV lithography to the 4-nm node

Yeung, Michael S.; Barouch, Eytan; Oh, Hye−Keun

doi:10.7567/jjap.54.06fn01

Cited by 7 publications

(2 citation statements)

References 30 publications

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“…The investigations of this work are triggered by the observation of waveguide-like modes in the simulated near-field of EUV masks. 16 Waveguiding effects in EUV were also observed in modeling studies on EUV lithography with an NA of 0.99 21 and in coherent diffractive imaging using EUV light. 22 This work perceives the patterned mask absorber as a waveguide.…”

Section: Introductionmentioning

confidence: 80%

Investigation of waveguide modes in EUV mask absorbers

Mesilhy

Evanschitzky

Bottiglieri

et al. 2021

J. Micro/Nanopattern. Mats. Metro.

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Background: Explaining imaging phenomena in EUV lithography requires more than a single point of view. Traditionally, the diffraction characteristics of EUV masks are analyzed in terms of the amplitude and phase of diffraction orders that are generated by the absorber pattern.Aim: We propose a complementary perspective to view the EUV mask absorber openings as waveguides.Approach: Comparisons between RCWA simulations and analytical solutions to waveguide equations are performed to prove that EUV mask absorbers behave as a waveguide.Results: This perspective can explain phenomena left unexplained by conventional analysis of far-field diffraction orders. Conclusions:The waveguiding effect in EUV mask absorbers explains the need for low refractive index and high extinction materials. The waveguide perspective explains why attenuated phase shift masks behave differently for EUV than our traditional understanding would suggest.

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Section: Introductionmentioning

confidence: 80%

Investigation of waveguide modes in EUV mask absorbers

Mesilhy

Evanschitzky

Bottiglieri

et al. 2021

J. Micro/Nanopattern. Mats. Metro.

View full text Add to dashboard Cite

show abstract

“…Similar waveguide effects for EUV masks were already described in publications on EUV imaging for 4-nm feature size. 37 The shape of the upward propagating light in the lower row of Fig. 3 looks different.…”

Section: Impact Of Absorber Extinction and Thickness On Imaging Of LImentioning

confidence: 95%

Perspectives and tradeoffs of absorber materials for high NA EUV lithography

Erdmann

Mesilhy

Evanschitzky

et al. 2020

J. Micro/Nanolith. MEMS MOEMS

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Next-generation extreme ultraviolet (EUV) systems with numerical apertures of 0.55 have the potential to provide sub-8-nm half-pitch resolution. The increased importance of stochastic effects at smaller feature sizes places further demands on scanner and mask to provide high contrast images. We use rigorous mask diffraction and imaging simulation to understand the impact of the EUV mask absorber and to identify the most appropriate optical parameters for high NA EUV imaging. Simulations of various use cases and material options indicate two main types of solutions: high extinction materials, especially for lines spaces, and low refractive index materials that can provide phase shift mask solutions. EUV phase masks behave very different from phase shift masks for DUV. Carefully designed low refractive index materials and masks can open up a new path toward high contrast edge printing. © The Authors. Published by SPIE under a Creative Commons Attribution 4.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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CMOS‐Technology‐Enabled Flexible and Stretchable Electronics for Internet of Everything Applications

2015

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Flexible and stretchable electronics can dramatically enhance the application of electronics for the emerging Internet of Everything applications where people, processes, data and devices will be integrated and connected, to augment quality of life. Using naturally flexible and stretchable polymeric substrates in combination with emerging organic and molecular materials, nanowires, nanoribbons, nanotubes, and 2D atomic crystal structured materials, significant progress has been made in the general area of such electronics. However, high volume manufacturing, reliability and performance per cost remain elusive goals for wide commercialization of these electronics. On the other hand, highly sophisticated but extremely reliable, batch-fabrication-capable and mature complementary metal oxide semiconductor (CMOS)-based technology has facilitated tremendous growth of today's digital world using thin-film-based electronics; in particular, bulk monocrystalline silicon (100) which is used in most of the electronics existing today. However, one fundamental challenge is that state-of-the-art CMOS electronics are physically rigid and brittle. Therefore, in this work, how CMOS-technology-enabled flexible and stretchable electronics can be developed is discussed, with particular focus on bulk monocrystalline silicon (100). A comprehensive information base to realistically devise an integration strategy by rational design of materials, devices and processes for Internet of Everything electronics is offered.

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Waveguide effect in high-NA EUV lithography: The key to extending EUV lithography to the 4-nm node

Cited by 7 publications

References 30 publications

Investigation of waveguide modes in EUV mask absorbers

Investigation of waveguide modes in EUV mask absorbers

Perspectives and tradeoffs of absorber materials for high NA EUV lithography

CMOS‐Technology‐Enabled Flexible and Stretchable Electronics for Internet of Everything Applications

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