Waveguide-Integrated PdSe₂ Photodetector over a Broad Infrared Wavelength Range

Abstract

Hybrid integration of van der Waals materials on a photonic platform enables diverse exploration of novel active functions and significant improvement in device performance for next-generation integrated photonic circuits, but developing waveguide-integrated photodetectors based on conventionally investigated transition metal dichalcogenide materials at the full optical telecommunication bands and mid-infrared range is still a challenge. Here, we integrate PdSe 2 with silicon waveguide for onchip photodetection with a high responsivity from 1260 to 1565 nm, a low noise-equivalent power of 4.0 pW•Hz −0.5 , a 3-dB bandwidth of 1.5 GHz, and a measured data rate of 2.5 Gbit•s −1 . The achieved PdSe 2 photodetectors provide new insights to explore the integration of novel van der Waals materials with integrated photonic platforms and exhibit great potential for diverse applications over a broad infrared range of wavelengths, such as on-chip sensing and spectroscopy.

Highly Sensitive Broadband Bolometric Photodetectors based on 2D PdSe2 Thin Film

“…Even though BP has a narrow band gap (0.3 -2.0 eV), its ambient instability limits its applications. Due to their strong layer-dependent band gaps and long-term material stability, noble metal dichalcogenides, such as PtSe 2 , [13][14][15] PtTe 2 , [16,17] PdSe 2 , [18][19][20][21][22][23][24] and their heterojunctions have been attracting considerable attention for broadband photodetection in recent years. Particularly, PdSe 2 shows a thickness-dependent bandgap from 0.03 to 1.37 eV, [25,26] ensuring broadband photon absorption and detection.…”

Asymmetrically Contacted Tellurium Short‐Wave Infrared Photodetector with Low Dark Current and High Sensitivity at Room Temperature

“…[4][5][6] The commonly used layered materials for infrared photodetection include elemental materials like graphene (near zero bandgap), [7,8] black phosphorus (BP) (bandgap of ≈0.3-2.0 eV), [6,9] tellurium (Te) (bandgap of ≈0.3-1.0 eV), [10,11] and noble metal dichalcogenides like few-layer platinum diselenide (PtSe 2 ) (bandgap of ≈0-1.2 eV) [12,13] and palladium diselenide (PdSe 2 ) (bandgap of ≈0-1.3 eV). [14][15][16] Among them, crystalline 2D Te is heavily studied since it not only possesses suitable bandgap and high mobility of 1755 cm 2 V −1 s −1 (room temperature), but is also highly environmentally adaptable together with low-cost manufacturing strategies. [17][18][19][20][21] The attractive potential of Te for short-wave infrared (SWIR) photodetection, large-scale circuits, and future smart signal processing systems has also been demonstrated in our earlier studies.…”

Direct Observation of Photon Induced Giant Band Renormalization in 2D PdSe2 Dichalcogenide by Transient Absorption Spectroscopy

“…[14] Multilayer PdSe 2 processes a narrow bandgap of 0.1 eV, making it suitable for long-wavelength infrared photodetection. [15,16] Additionally, PdSe 2 exhibits high carrier mobility and on/off ratio, which has also been exploited as field-effect transistors. [17] There is abundant numerous research involving photonics devices based on 2D PdSe 2 , but only a few works have focused on the detailed photo-physics and relaxation of nonequilibrium carriers in 2D PdSe 2 NSs.…”