Waveguiding and photoluminescence in Er3+-doped Ta2O5 planar waveguides

Subramanian, Ananth; Otón, Claudio J.; Wilkinson, James S.; Greef, R.

doi:10.1016/j.jlumin.2009.02.020

Cited by 16 publications

(7 citation statements)

References 23 publications

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“…Tm-doped tantalum pentoxide waveguides on oxidized silicon wafers were designed to enable spectroscopic measurements of absorption and emission spectra, fluorescence lifetime, and conduct studies of laser operation. The fabrication was based on processes developed for Er:Ta 2 O 5 waveguides on silicon [24] and ellipsometer data for refractive index from that work.…”

Section: Waveguide Design and Fabricationmentioning

confidence: 99%

“…Rib waveguides ranging from 2 to 20 μm in width were fabricated on wafers annealed at 650°C for 12 hours. The waveguides were patterned using conventional photolithography and etched to a depth of 330 nm by Ar ion-beam milling, using optimized parameters determined for Er:Ta 2 O 5 waveguides [24], and then annealed in oxygen at 650°C for a further 2 hours.…”

Section: Waveguide Geometrymentioning

confidence: 99%

“…As with erbium-doped Ta 2 O 5 waveguides [24], it is believed that replenishing of oxygen during annealing reduces non-radiative transitions and improves the efficiency of the emission from the excited state. 3.…”

Section: Excited-state Lifetime Measurementsmentioning

confidence: 99%

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Spectroscopy of thulium-doped tantalum pentoxide waveguides on silicon

Tong

Mitchell

Aghajani

et al. 2020

Opt. Mater. Express

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The spectroscopic properties and laser operation of thulium-doped tantalum pentoxide (Tm:Ta 2 O 5) waveguides are reported in this paper. Fluorescence ranging from 1600 nm to 2200 nm, corresponding to the 3 F 4 → 3 H 6 transition was observed from 3 wt% Tm:Ta 2 O 5 waveguides pumped at a wavelength of 795 nm. Measurements of excited-state lifetime, the emission and absorption spectra, with subsequent calculation of the crosssections for the deposited films, reveal its potential as a gain medium. Laser operation at a wavelength of 1865 nm was obtained with feedback from the polished end faces alone, demonstrating gain of >9 dB/cm.

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Section: Waveguide Design and Fabricationmentioning

confidence: 99%

Section: Waveguide Geometrymentioning

confidence: 99%

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Spectroscopy of thulium-doped tantalum pentoxide waveguides on silicon

Tong

Mitchell

Aghajani

et al. 2020

Opt. Mater. Express

Self Cite

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“…Many different techniques to deposit Ta 2 O 5 thin films have been utilized allowing its use in compact photonics circuits and as a potential host for rare earth ions to achieve optical gain 34 . Similar to Yttrium Oxide, Ta 2 O 5 has a large energy band gap of 4.2eV 26 which in principle allows nearly absorption free transmission from 400 nm to 10 µm 35 , and is a proven host material for rare earth dopants 34,35 , with low phonon energy and capability to produce low loss waveguides 36 .…”

Section: Yttrium Oxide Y 2 Omentioning

confidence: 99%

Structural and optical properties of different dielectric thin films for planar waveguiding applications

et al. 2011

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Thin films of two different dielectric materials (Yttrium Oxide and Tantalum Pentoxide) were deposited by reactive sputtering and reactive evaporation to determine their suitability as a host for a rare earth doped planar waveguide upconversion laser. The optical properties, structure and crystalline phase of the films were found to be dependent on the deposition method and process parameters. X-ray diffraction (XRD) analysis on several of the 'as-deposited' thin films revealed that the films vary from amorphous to highly crystalline depending on material and process parameters . SEM imaging of the Yttrium Oxide layers revealed a regular column structure confirming their crystalline nature and SEM imaging of the Tantalum Pentoxide layers revealed a smooth amorphous layer confirming their XRD diffractrograms. The dielectric thin film layers which allowed guiding in both the visible and infra-red regions of the spectrum had a more amorphous structure.

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“…Ta 2 O 5 has a large energy band gap of 4.2 eV 11 which allows nearly absorption free transmission from 400 nm to 10 µm 12 . It is a proven low phonon energy host material for rare earth dopants 10,12 (necessary for efficient fluorescence emission), and is suitable to make low loss waveguides 13 . Low phonon energy is an important requirement for an upconversion laser host material.…”

Section: Introductionmentioning

confidence: 99%

Properties of rare earth doped thin film dielectric layers for upconversion laser waveguides

et al. 2011

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Thin films of erbium doped tantalum pentoxide were prepared on unheated <100> orientated silicon substrates with a thermally grown 2 µm thick SiO 2 layer using reactive sputtering in an oxygen rich environment for upconversion laser experiments. Tantalum and Erbium metal targets were co-sputtered using an ion beam assisted reactive process to produce the high quality amorphous thin film layers. The Erbium dopant concentration was adjusted by varying the relative deposition rate. Slab waveguide loss before high temperature annealing was measured to be 0.8 dB/cm at 633 nm which reduced to 0.5 dB/cm after annealing at 500 °C. Micron scale waveguides were etched into the deposited thin film slab waveguides using photolithography and reactive ion etching. Finally a silicon dioxide buffer layer was deposited on top of the ridge waveguides to help constrict the laser mode and to add a protective layer. 2 cm long waveguide samples were cleaved and polished to achieve good optical quality end facets for laser experiments. Upconversion efficiency and laser gain measurements were performed on the final waveguides. Waveguide losses of 6.35 dB/cm were measured for the final ridge waveguides and a coupling efficiency of 48 % was obtained. A positive net gain of 0.25 dB was measured for upconversion to 551 nm using a pump probe optical setup.

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Waveguiding and photoluminescence in Er3+-doped Ta2O5 planar waveguides

Cited by 16 publications

References 23 publications

Spectroscopy of thulium-doped tantalum pentoxide waveguides on silicon

Spectroscopy of thulium-doped tantalum pentoxide waveguides on silicon

Structural and optical properties of different dielectric thin films for planar waveguiding applications

Properties of rare earth doped thin film dielectric layers for upconversion laser waveguides

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