Wavelength division multiplexing laser arrays for applications in optical networking and sensing: Overview and perspectives

Lee, San‐Liang; Pukhrambam, Puspa Devi

doi:10.7567/jjap.57.08pa03

Cited by 9 publications

(4 citation statements)

References 79 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This effect can be used to expand the tuning range of laser sources. The ability of a smooth change in the wavelength across the ultra-wide window region is also important for multi-wavelength laser arrays of single-mode laser emitters required for dense wavelength division multiplexing (DWDM) to increase data transfer rate [ 51 , 52 ].…”

Section: Discussionmentioning

confidence: 99%

Surface Nanostructuring during Selective Area Epitaxy of Heterostructures with InGaAs QWs in the Ultra-Wide Windows

et al. 2020

View full text Add to dashboard Cite

Selective area epitaxy (SAE) is widely used in photonic integrated circuits, but there is little information on the use of this technique for the growth of heterostructures in ultra-wide windows. Samples of heterostructures with InGaAs quantum wells (QWs) on GaAs (100) substrates with a pattern of alternating stripes (100-μm-wide SiO2 mask/100-μm-wide window) were grown using metalorganic chemical vapour deposition (MOCVD). It was found that due to a local change in the growth rate of InGaAs QW in the window, the photoluminescence (PL) spectra measured from the edge to the center of the window exhibited maximum blueshifts of 14 and 19 meV at temperatures of 80 K and 300 K, respectively. Using atomic force microscopy, we have demonstrated that the surface morphologies of structures grown using standard epitaxy or SAE under identical MOCVD growth conditions correspond to a step flow growth with a step height of ~1.5 ML or a step bunching growth mode, respectively. In the structures grown with the use of SAE, a strong variation in the surface morphology in an ultra-wide window from its center to the edge was revealed, which is explained by a change in the local misorientation of the layer due to a local change in the growth rate over the width of the window.

show abstract

Section: Discussionmentioning

confidence: 99%

Surface Nanostructuring during Selective Area Epitaxy of Heterostructures with InGaAs QWs in the Ultra-Wide Windows

et al. 2020

View full text Add to dashboard Cite

show abstract

“…At the same time, there are a number of topical tasks that require flexible control of AR spectral characteristics within a single heterostructure, implemented by local changes in the composition and thickness of the quantum-well ARs. Such tasks include the creation of photonic integrated circuits, when it is required to combine a number of active elements of various spectral properties (lasers, detectors, amplifiers, waveguides, and modulators) within a single monolithic structure [10][11][12], as well as the creation of multispectral laser sources, effectively operating in a wide spectral range, for example, for the wavelength division multiplexing [13][14][15], the formation of an absorption section for mode-locked lasers [16].…”

Section: Introductionmentioning

confidence: 99%

Selective Area Epitaxy of Highly Strained InGaAs Quantum Wells (980–990 nm) in Ultrawide Windows Using Metalorganic Chemical Vapor Deposition

Shamakhov,

Slipchenko,

Nikolaev

et al. 2023

Nanomaterials

View full text Add to dashboard Cite

We employed the selective-area-epitaxy technique using metalorganic chemical vapor deposition to fabricate and study samples of semiconductor heterostructures that incorporate highly strained InGaAs quantum wells (980–990 nm emission wavelength). Selective area epitaxy of InGaAs quantum wells was performed on templates that had a patterned periodic structure consisting of a window (where epitaxial growth occurred) and a passive mask (where epitaxial growth was suppressed), each with a width of 100 µm for every element. Additionally, a selectively grown potential barrier layer was included, which was characterized by an almost parabolic curvature profile of the surface. We conducted a study on the influence of the curvature profile of the growth surface on the optical properties of InGaAs quantum wells and the spatial distribution of composition in an ultrawide window. Our results showed that, under fixed selective-area-epitaxy conditions, the composition of the InxGa1−xAs and the wavelength of the quantum-well emission changed across the width of the window. Our study demonstrates that increasing the curvature profile of the growth surface of highly strained quantum wells leads to a transition in the photoluminescence wavelength distribution profile across the window, from quasi-parabolic to inverted parabolic.

show abstract

“…For DFB laser arrays used in optical communication, in addition to the conventional properties such as wavelength, linewidth, power, and side-mode suppression ratio (SMSR), we also need to pay attention to issues such as wavelength stability, wavelength accuracy, and wavelength locking [6]. For wavelength stability, it is usually defined by the maximum spectral excursion (MSE).…”

Section: Introductionmentioning

confidence: 99%

Research Progress of Monolithic Integrated DFB Laser Arrays for Optical Communication

et al. 2022

View full text Add to dashboard Cite

Photonic integrated circuits (PICs) play a leading role in modern information and communications technology. Among the core devices in PICs is the distributed feedback (DFB) multi-wavelength semiconductor laser array. Multi-wavelength semiconductor laser arrays can be integrated on a single chip and have the advantages of high stability, good single-mode performance, and narrow line width. The wavelength tuning range has been expanded through the design of the DFB laser array, which is an ideal light source for wavelength-division multiplexing systems. The preparation of DFB laser arrays with a large number of channels, ease of mass production, and accurate emission wavelengths has become an important field of research. The connection methods of lasers in DFB laser arrays are introduced systematically and the current methods of manufacturing multi-wavelength DFB laser arrays covering the perspective of technical principles, technical advantages and disadvantages, main research progress, and research status are summarized.

show abstract

Wavelength division multiplexing laser arrays for applications in optical networking and sensing: Overview and perspectives

Cited by 9 publications

References 79 publications

Surface Nanostructuring during Selective Area Epitaxy of Heterostructures with InGaAs QWs in the Ultra-Wide Windows

Surface Nanostructuring during Selective Area Epitaxy of Heterostructures with InGaAs QWs in the Ultra-Wide Windows

Selective Area Epitaxy of Highly Strained InGaAs Quantum Wells (980–990 nm) in Ultrawide Windows Using Metalorganic Chemical Vapor Deposition

Research Progress of Monolithic Integrated DFB Laser Arrays for Optical Communication

Contact Info

Product

Resources

About