Wavelength Jumps and Multimode Instabilities in Integrated Master Oscillator Power Amplifiers at 1.5 &lt;inline-formula&gt;&lt;tex-math notation="LaTeX"&gt;$\mu$&lt;/tex-math&gt;&lt;/inline-formula&gt;m: Experiments and Theory

Pérez-Serrano, A.; Vilera, M.; Javaloyes, J.; Tijero, J. M. G.; Esquivias, I.; Balle, S.

doi:10.1109/jstqe.2015.2413408

Cited by 10 publications

(4 citation statements)

References 16 publications

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“…To improve the MOPA stability, a key factor is to reduce the reflectivity of the device section. Consequently, a certain tilt angle is often introduced in the modulation part and the tapered SOA part to reduce the device reflectivity [95][96][97][98]. In 2018, Pham C's research group reported a three-stage MOPA with a tilted structure, which achieved an output power of 380 mW [99,100].…”

Section: Polarization Insensitivitymentioning

confidence: 99%

A Review of High-Power Semiconductor Optical Amplifiers in the 1550 nm Band

Tang,

Yang,

Qin

et al. 2023

Sensors

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The 1550 nm band semiconductor optical amplifier (SOA) has great potential for applications such as optical communication. Its wide-gain bandwidth is helpful in expanding the bandwidth resources of optical communication, thereby increasing total capacity transmitted over the fiber. Its relatively low cost and ease of integration also make it a high-performance amplifier of choice for LiDAR applications. In recent years, with the rapid development of quantum-well (QW) material systems, SOAs have gradually overcome the shortcomings of polarization sensitivity and high noise. The research on quantum-dot (QD) materials has further improved the noise characteristics and transmission loss of SOAs. The design of special waveguide structures—such as plate-coupled optical waveguide amplifiers and tapered amplifiers—has also increased the saturation output power of SOAs. The maximum gain of the SOA has been reported to be more than 21 dB. The maximum saturation output power has been reported to be more than 34.7 dBm. The maximum 3 dB gain bandwidth has been reported to be more than 120 nm, the lowest noise figure has been reported to be less than 4 dB, and the lowest polarization-dependent gain has been reported to be 0.1 dB. This study focuses on the improvement and enhancement of the main performance parameters of high-power SOAs in the 1550 nm band and introduces the performance parameters, the research progress of high-power SOAs in the 1550 nm band, and the development and application status of SOAs. Finally, the development trends and prospects of high-power SOAs in the 1550 nm band are summarized.

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Section: Polarization Insensitivitymentioning

confidence: 99%

A Review of High-Power Semiconductor Optical Amplifiers in the 1550 nm Band

Tang,

Yang,

Qin

et al. 2023

Sensors

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“…1b). It is well known that coupled cavity effects can produce unexpected modal jumps [10]. The red shift of the FP modes above threshold when increasing the current in Fig.…”

Section: Resultsmentioning

confidence: 83%

Total polarization-dependent loss of cascaded optical components for optical space applications

Elwan

Benaddi

2023

International Conference on Space Optics — ICSO 2022

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In this work we present experimental results on the radiation hardness of InP based Photonic Integrated Circuits (PICs) fabricated in a multi-project wafer through an open access platform. The PIC includes different types of building blocks: semiconductor optical amplifiers (SOA), waveguides, electro-optical phase modulators (EOPM), multi-mode interference couplers and photodiodes (PD). Three chips were submitted to gamma radiation up to 106 krad in four steps and another three to proton radiation up to 1.5 x 1011 p+/cm2. The effects of the radiation were evaluated by measuring on-wafer the power-current-voltage (P-I-V) characteristics and emission spectra of several tunable four-section Distributed Bragg Reflector (DBR) lasers. The P-I-V characteristics measured before radiation showed kinks corresponding to modal changes and stable regions with single longitudinal mode emission. After the radiation some changes were observed: i) the value of the threshold current in some of the lasers, either increasing or decreasing its value; ii) slightly different emission wavelength and evolution of the modal jumps with current. However, these changes were not systematic in all devices, and they were not dependent of the radiation dose. In consequence, they were attributed to the lack of reproducibility of the on-wafer measurements and the high sensitivity of the modal selection to temperature changes in these DBR lasers. In conclusion, the building blocks of the PICs involved in the DBR laser (SOA, EOM, waveguide, PD) can be considered radiation hard up to the levels in the tests, which were typical for space applications.

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“…Over the last years, master oscillator power amplifiers have been requested by several applications such as LIDAR, free space optical communications, and spectroscopy. These applications need spatially diffraction limited and spectral narrow-band emission at several hundreds of milliwatts or even watts output power [1][2][3][4]. A monolithically integrated master oscillator power amplifier at 1.5 μm is presented in [2].…”

Section: Introductionmentioning

confidence: 99%

“…In Ref. [4] the physical origins of these phenomena were investigated in the framework of a time-dependent travelling wave (TW) model which phenomenologically incorporates thermal effects via self and cross-heating of the different sections of the device similarly as proposed in [5] for the first time.…”

Section: Introductionmentioning

confidence: 99%

The Influence of a Residual Reflectivity at the Front Facet of a Multisection Master-Oscillator Power-Amplifier

Grigoriev¹,

Tronciu²,

Werner³

et al. 2022

JES

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This paper reports on the theoretical end experimental investigation of the output characteristics of a multisection master-oscillator power-amplifier (MOPA). It consists of a master oscillator (MO) composed by a gain section surrounded by two DBR sections monolithically integrated with a power amplifier (PA). We use a traveling wave equation model to calculate the optical output power in dependence on the current injected into the PA. The experimental results can be well explained with our theoretical analysis. For a finite front facet reflectivity of the PA the system is acting as a compound cavity.

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Wavelength Jumps and Multimode Instabilities in Integrated Master Oscillator Power Amplifiers at 1.5 <inline-formula><tex-math notation="LaTeX">$\mu$</tex-math></inline-formula>m: Experiments and Theory

Cited by 10 publications

References 16 publications

A Review of High-Power Semiconductor Optical Amplifiers in the 1550 nm Band

A Review of High-Power Semiconductor Optical Amplifiers in the 1550 nm Band

Total polarization-dependent loss of cascaded optical components for optical space applications

The Influence of a Residual Reflectivity at the Front Facet of a Multisection Master-Oscillator Power-Amplifier

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