Wavelength-selectable microarray light sources for wide-band DWDM applications

Hatakeyama, H.; Kudo, K.; Yokoyama, Yoshitaka; Naniwae, K.; Sasaki, T.

doi:10.1109/jstqe.2002.806717

Cited by 30 publications

(12 citation statements)

References 15 publications

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“…Time transient of wavelength is shown in Fig. 13.21b, and less than 1 pm (125 MHz) wavelength fluctuation has been achieved [48].…”

Section: Dynamic Wavelength Drift and Its Suppressionmentioning

confidence: 94%

Semiconductor Lasers for High-Density Optical Communication Systems

Uenohara

2010

High Spectral Density Optical Communication Technologies

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Semiconductor lasers have several advantages compared to other types of lasers (a fiber ring laser, a solid-state laser, a gas laser), such as compactness, integrability to other components (a modulator, a power monitor photodiode, a wavelength tuning component). In addition, a monolithic tunable laser can be fabricated in the semiconductor by combining wavelength tuning regions and a phase control region together with an active region. That is why a monolithic integrated semiconductor tunable laser is very attractive not only for a compact light source for large-capacity, optical communication systems but also for economical backup resource. However, there are several technical issues to achieve high-quality semiconductor tunable lasers applicable to high-density optical communication systems due to the severe requirements of narrow spectral linewidth, wide tunability, and high wavelength stability.In this chapter, several technical methodologies for improving spectral linewidth and wavelength tunability are overviewed. Requirements to Spectral LinewidthFor realization of large-capacity and long-haul WDM optical transmission systems, significant distortion by both chromatic and polarization mode dispersion should be overcome. For that solution, modulation scheme with narrow signal bandwidth is the recent trends. For example, multi-level modulation format, such as DQPSK and M-QAM, and multi-carrier modulation, such as OFDM, have been intensively investigated. For these modulation schemes, high-sensitive receiver is necessary, and therefore, transmission signal is detected with digital coherent detection technique. Therefore, even for a tunable semiconductor laser, narrow spectral linewidth

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“…Time transient of wavelength is shown in Fig. 13.21b, and less than 1 pm (125 MHz) wavelength fluctuation has been achieved [48].…”

Section: Dynamic Wavelength Drift and Its Suppressionmentioning

confidence: 94%

Semiconductor Lasers for High-Density Optical Communication Systems

Uenohara

2010

High Spectral Density Optical Communication Technologies

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“…The MMI power splitter has broadband operation characteristics in power splitting over the 40nm range. This research can provide a certain reference value for the fabrication of power splitter in multi-wavelength integrated light source [8][9][10] .…”

Section: Introductionmentioning

confidence: 93%

Design and fabrication of a 1-by-4 multimode interference splitter based on InP

Zhang

Zhu

et al. 2011

SPIE Proceedings

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“…Examples of such integrations are distributed feedback laser/ electroabsorption modulator ͑EAM͒, 3 integrated tunable distributed Bragg reflector laser/EAM, 4 semiconductor optical amplifier/EAM, 5,6 or more complex devices such as selectable wavelength light sources for dense wavelength division multiplexing. 7 In order to realize and control complex monolithic integrations with SAG band-gap engineering, we report here on the development of a predictive modeling tool. This work was carried out in two steps.…”

Section: Introductionmentioning

confidence: 99%

Mask pattern interference in AlGaInAs selective area metal-organic vapor-phase epitaxy: Experimental and modeling analysis

Dupuis¹,

Décobert²,

Lagrée³

et al. 2008

Journal of Applied Physics

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We studied selective area growth modeling and characterization of the AlGaInAs material system. We used a three-dimensional vapor phase diffusion model to extract the effective diffusion lengths of Al, Ga, and In species from measured thickness profiles of the three binaries AlAs, GaAs, and InP. Our growth conditions yield to 50, 85, and 10 m for Al, Ga, and In, respectively. Based on these values, we achieved a precise prediction of AlGaInAs thickness, composition, band gap, and biaxial strain variations in different selective area growth conditions. Particular attention was paid to the influence of neighboring cells in the case of high mask density. This configuration occurs in practical component mask layout. High mask density leads to interferences between masked cells and enhances the effect of the long diffusion length of aluminum and gallium species. Then, the biaxial strain is tensile shifted and the band gap is blue shifted in the vicinity of a mask, compared to reference material features grown away from the mask. High-resolution micro-photoluminescence and optical interferometer microscopy measurements confirmed the validity of simulated band gap and thickness variations for both bulk and multi-quantum well layers.

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Wavelength-selectable microarray light sources for wide-band DWDM applications

Cited by 30 publications

References 15 publications

Semiconductor Lasers for High-Density Optical Communication Systems

Semiconductor Lasers for High-Density Optical Communication Systems

Design and fabrication of a 1-by-4 multimode interference splitter based on InP

Mask pattern interference in AlGaInAs selective area metal-organic vapor-phase epitaxy: Experimental and modeling analysis

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