Wavelength Switching Speed in Semiconductor Ring Lasers With On-Chip Filtered Optical Feedback

Khoder, Mulham; Nguimdo, Romain Modeste; Leijtens, X.J.M.; Bolk, Jeroen; Danckaert, Jan; Verschaffelt, Guy

doi:10.1109/lpt.2013.2296398

Cited by 23 publications

(13 citation statements)

References 17 publications

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“…We noticed that increasing the noise strength leads to a reduction both in the delay and in the transition time. More information related to the effect of feedback strength and phase on the delay time and the transition can be found in [34].…”

Section: Discussionmentioning

confidence: 99%

“…Others studies have investigated switching between different longitudinal modes(LMs) of the laser, or switching between directional modes in ring lasers [30][31][32][33]. In this work we investigate the wavelength switching speed in a SRL with filtered feedback [34]. We will discuss the experimentally measured switching speed and compare this with numerical simulations based on a rate-equation model.…”

Section: Introductionmentioning

confidence: 99%

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Wavelength tuning speed in semiconductor ring lasers using on-chip filtered optical feedback

Verschaffelt

Khoder

Nguimdo

et al. 2014

Silicon Photonics and Photonic Integrated Circuits IV

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Semiconductor ring lasers are promising sources in photonic integrated circuits because they do not require cleaved facets or mirrors to form a laser cavity. In this work, we characterize the wavelength switching speed of a tunable semiconductor ring lasers using filtered optical feedback. The filtered optical feedback is realized by employing two arrayed waveguide gratings to split/recombine light into different wavelength channels. Semiconductor optical amplifiers are placed in the feedback loop in order to control the feedback of each wavelength channel independently. The wavelength switching is achieved by changing the currents injected in the semiconductor optical amplifier gates. Experimentally, we observe a wavelength transition time of 5 ns. However, we also noticed a non-negligible delay in the switching process. [ Khoder et al, IEEE Photon. Technol. Lett. 26, 520-523, 2014]. We numerically reproduce the experimental results using rate equations taking into account the effect of spontaneous emission. The simulations further elaborate on the effect of the noise strength on the wavelength transition time and the delay time.

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Wavelength tuning speed in semiconductor ring lasers using on-chip filtered optical feedback

Verschaffelt

Khoder

Nguimdo

et al. 2014

Silicon Photonics and Photonic Integrated Circuits IV

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“…The tunable semiconductor ring laser, reported in Khoder et al [26], fabricated within one of the MPW provided by COBRA, contains integrated filtered-optical-feedback sections and was tailor-made for the experimental characterization of the speed of wavelength tuning. The feedback is realized by employing two arrayed-waveguide gratings in order to split and then recombine light into different wavelength channels.…”

Section: Discretely Tunable Ring Laser For Researchmentioning

confidence: 99%

Lasers in InP generic photonic integration technology platforms

Latkowski

Lenstra

2015

Advanced Optical Technologies

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A review is given of a number of lasers in a form of photonic integrated circuits realized on InP substrate using a generic integration approach. The potential of these photonic circuits lies in their compactness, low power consumption, and significant reduction of fabrication cost by realization in generic foundry runs. Generic integration platforms offer the possibility of realizing functionally advanced photonic circuits using combinations of just a few standardized and parameterized building blocks. This vibrant field opens new doors to innovative product development for SMEs as well as curiosity-driven research.

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“…The cascade of these regimes and the frequency of these oscillations is fixed by α, the saturation coefficients and the backscattering parameters. The relationship between the theoretical parameters and real-world devices are detailed in [27,[65][66][67]. We consider: α = 3.5, µ = 1.7, s = 0.005, c = 0.01, κ = 100 ns −1 , γ = 0.2 ns −1 , ω 0 T = 0, k = 0.44 ns −1 , φ k = 1.5 and T = 60 ns.…”

Section: Model and Simulationsmentioning

confidence: 99%

Semiconductor ring lasers with delayed optical feedback: low-frequency fluctuations

et al. 2014

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Semiconductor lasers subject to external feedback are known to exhibit a wide variety of dynamical regimes desired for some applications such as chaos cryptography, random bit generation, and reservoir computing. Low-frequency fluctuations is one of the most frequently encountered regimes. It is characterized by a fast drop in laser intensity followed by a gradual recovery. The duration of this recovery process is irregular and of the order of hundred nanoseconds. The average time between dropouts is much larger than the laser system characteristic time-scales. Semiconductor ring lasers are currently the focus of a rapidly thriving research activity due to their unique feature of directional bistability. They can be employed in systems for all-optical switching, gating, wavelength-conversion functions, and all-optical memories. Semiconductor ring lasers do not require cleaved facets or gratings for optical feedback and are thus particularly suited for monolithic integration. We experimentally and numerically address the issue of low-frequency fluctuations considering a semiconductor ring laser in a feedback configuration where only one directional mode is re-injected into the same directional mode, a so-called single self-feedback. We have observed that the system is very sensitive to the feedback strength and the injection current. In particular, the power dropouts are more regular when the pump current is increased and become less frequent when the feedback strength is increased. In addition, we find two different recovery processes after the power dropouts of the low-frequency fluctuations. The recovery can either occur via pulses or in a stepwise manner. Since low-frequency fluctuations are not specific to semiconductor ring lasers, we expect these recovery processes to appear also in VCSELs and edge-emitting lasers under similar feedback conditions. The numerical simulations also capture these different behaviors, where the representation in the phase space of the carriers versus the round trip phase difference gives additional insight into these phenomena. This proceedings paper gives a short overview of the results of L. Mashal et al. [L. Mashal et al., IEEE J. Quantum. Electron. 49, 790, 2013].

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Wavelength Switching Speed in Semiconductor Ring Lasers With On-Chip Filtered Optical Feedback

Cited by 23 publications

References 17 publications

Wavelength tuning speed in semiconductor ring lasers using on-chip filtered optical feedback

Wavelength tuning speed in semiconductor ring lasers using on-chip filtered optical feedback

Lasers in InP generic photonic integration technology platforms

Semiconductor ring lasers with delayed optical feedback: low-frequency fluctuations

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