2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM) 2010
DOI: 10.1109/iciprm.2010.5516225
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Wavelength trimming of MEMS VCSELs for post-process wavelength allocation

Abstract: We demonstrate the wavelength trimming of MEMS VCSELs by etching the cantilevershaped top mirror using FIB. This technique can be used for the post-process precise wavelength allocation of athermal MEMS VCSELs. Experimental results show a possibility of realizing both red-shift and blue-shift wavelength changes by choosing the etching area of the cantilever.

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“…We demonstrated a possibility of increasing the temperature dependence of wavelength by introducing a SiO 2 /AlGaAs cantilever structure. 6) Since the temperature dependence of wavelength can be determined by changing the structure of cantilevers, we are able to either increase or decrease the temperature dependence. 7) Another interesting application is to achieve ''gain-matched'' operation of VCSELs if the temperature dependence is designed to be about 0.3 nm/K which is the temperature dependence of gain-peak in conventional VCSEL.…”
mentioning
confidence: 99%
“…We demonstrated a possibility of increasing the temperature dependence of wavelength by introducing a SiO 2 /AlGaAs cantilever structure. 6) Since the temperature dependence of wavelength can be determined by changing the structure of cantilevers, we are able to either increase or decrease the temperature dependence. 7) Another interesting application is to achieve ''gain-matched'' operation of VCSELs if the temperature dependence is designed to be about 0.3 nm/K which is the temperature dependence of gain-peak in conventional VCSEL.…”
mentioning
confidence: 99%