2007
DOI: 10.1103/physrevb.75.155416
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Wavelength tunability of ion-bombardment-induced ripples on sapphire

Abstract: A study of ripple formation on sapphire surfaces by 300 -2000 eV Ar + ion bombardment is presented. Surface characterization by in-situ synchrotron grazing incidence small angle x-ray scattering and ex-situ atomic force microscopy is performed in order to study the wavelength of ripples formed on sapphire (0001) surfaces. We find that the wavelength can be varied over a remarkably wide range -nearly two orders of magnitude -by changing the ion incidence angle.Within the linear theory regime, the ion induced vi… Show more

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Cited by 44 publications
(36 citation statements)
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“…16 Divergence of the ripple wavelength is observed near the transition, which is consistent with the CV mechanism. In this paper we test additional features of Carter's model through direct comparison to careful experiments.…”
Section: Introductionsupporting
confidence: 84%
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“…16 Divergence of the ripple wavelength is observed near the transition, which is consistent with the CV mechanism. In this paper we test additional features of Carter's model through direct comparison to careful experiments.…”
Section: Introductionsupporting
confidence: 84%
“…First, a ripple pattern is produced by 45°off-normal incidence Ar + ions at 600 eV, where the off-normal incidence is in the x-z plane, as detailed in our previous study. 16 An atomic force microscope ͑AFM͒ image of the patterned starting surface of Al 2 O 3 is shown in Fig. 1͑b͒, which reveals a wavy ripple morphology across the entire image.…”
Section: Resultsmentioning
confidence: 98%
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“…In case of smoothening by surface diffusion mechanism, the wavelength should decrease with increasing ion energy [23]. The opposite is expected in case of smoothening by surface confined viscous flow [24]. Here we have observed the increase of wavelength with increasing ion energy.…”
Section: Resultsmentioning
confidence: 48%
“…Some studies were already performed aiming to gain the full control on ripple formation process on various substrates: sapphire [4], silicon [5,6], ZnO [7], or to investigate the influence of ripples on various physical properties, most notably the magnetic anisotropy, exchange bias [8], or morphology of magnetic domains. Recently many papers are devoted to rippled surfaces of diluted magnetic semiconductors (DMSs), with (Ga, Mn) As being probably the most frequently studied substance in this class [9,10].…”
Section: Discussionmentioning
confidence: 99%