The EB stepper is an electron beam projection lithography (EPL) system. The EB stepper system is similar to an optical scanning exposure system with a reticle. Nikon has been developing EB stepper on the basis of the optical stepper design. The field size of the electron optical (EO) subsystem of EB stepper (subfield/(SF)) is 1 mm square on a reticle and 250 µm square on a wafer (demagnification: 4×). For full chip exposure, SF exposures are stitched using electron beam deflection and stage movement. A new type of stage has been developed for EB stepper using air guides and linear motors to achieve a high-throughput target. These subsystems are assembled separately at present. In this paper, preliminary results on EB stepper as an exposure system are reported. Progress on infrastructures for EPL is discussed.