Wavelength‐Tunable Electroluminescent Light Sources from Individual Ga‐Doped ZnO Microwires

Abstract

Electrically driven wavelength-tunable light emission from biased individual Ga-doped ZnO microwires (ZnO:Ga MWs) is demonstrated. Single crystalline ZnO:Ga MWs with different Ga-doping concentrations have been synthesized using a one-step chemical vapor deposition method. Strong electrically driven light emission from individual ZnO:Ga MW based devices is realized with tunable colors, and the emission region is localized toward the center of the wires. Increasing Ga-doping concentration in the MWs can lead to the redshift of electroluminescent emissions in the visible range. Interestingly, owing to the lack of rectification characteristics, relevant electrical measurement results show that the alternating current-driven light emission functions excellently on the ZnO:Ga MWs. Consequently, individual ZnO:Ga MWs, which can be analogous to incandescent sources, offer unique possibilities for future electroluminescence light sources. This typical multicolor emitter can be used to rival and complement other conventional semiconductor devices in displays and lighting.

Hybrid quadrupole plasmon induced spectrally pure ultraviolet emission from a single AgNPs@ZnO:Ga microwire based heterojunction diode

“…On incorporation with residual O 2 in the furnace chamber, individual Gadoped ZnO MWs could be gradually formed around the Si substrate. 24,[38][39][40] A single ZnO:Ga MW was selected to construct an incandescent-type lamp lament source, with the emission region located towards the center of the wire. By incorporating Ag quasiparticle nanolms (the sputtering time: 300 s), a single Ag@ZnO:Ga MW based incandescent-type emitter was also fabricated.…”

“…The preparation of individual AgNPs@ZnO:Ga MWs Individual ZnO:Ga MWs with hexagonal cross-section were successfully synthesized via a chemical vapor deposition (CVD) method. 24,[38][39][40] In the synthesis procedure, by employing highpurity Ga 2 O 3 (99.999%) as an efficient Ga incorporation source, a premixed high-purity powder of ZnO (99.99%), Ga 2 O 3 and graphite (C) (99.99%) with the weight ratio of 10 : 1 : 11 was used as the precursor source material. 39,41 A corundum boat was used as a container, with a Si substrate placed on the precursor mixture to collect the products.…”

“…24,[38][39][40] In the synthesis procedure, by employing highpurity Ga 2 O 3 (99.999%) as an efficient Ga incorporation source, a premixed high-purity powder of ZnO (99.99%), Ga 2 O 3 and graphite (C) (99.99%) with the weight ratio of 10 : 1 : 11 was used as the precursor source material. 39,41 A corundum boat was used as a container, with a Si substrate placed on the precursor mixture to collect the products. To make sure the as-synthesized MWs exhibited high crystal quality and excellent electrical conduction, the growth temperature of the furnace chamber was maintained at 1150 C; meanwhile, a mixed carrier gas composed of high-purity argon (Ar: 99.99%, 180 sccm) and high-purity oxygen (O 2 : 99.99%, 15 sccm), serving as the protecting gas and the reaction gas, respectively, was introduced into the furnace chamber.…”

“…The emission features were analogous to a tungsten lament lamp. 10,38,39 Interestingly, the Ag quasiparticle nanolms could be annealed into physically isolated Ag nanoparticles located in the emission regions due to the Joule heating effect. Moreover, by increasing the sputtering time, the size and gap distance of the prepared Ag nanoparticle aggregates could also be modulated.…”

A novel ultra-thin-walled ZnO microtube cavity supporting multiple optical modes for bluish-violet photoluminescence, low-threshold ultraviolet lasing and microfluidic photodegradation

“…Recently, strong current-driven light emissions from an individual ZnO:Ga microwire with tunable visible colors, analogous to incandescent sources, have been realized, which offer a new possibility for future ZnO-based on-chip light sources via electroluminescence. 9 ZnO naturally possesses multiple morphological structures in micron/submicron scales, covering wires, belts, combs, rods, tubes, donuts and so on, which can be synthesized by various methods. [10][11][12] Some of these structures have been employed as optical resonators for random, Fabry-Perot (FP) or whispering-gallery mode (WGM) UV lasing.…”