Weak antilocalization and electron-electron interactions in topological insulator 
<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>Bi</mml:mi><mml:mi>x</mml:mi></mml:msub><mml:msub><mml:mi>Te</mml:mi><mml:mi>y</mml:mi></mml:msub></mml:mrow></mml:math>
 films deposited by sputtering on Si(100)

Pandey, Lalit; Husain, Sajid; Chen, Xin; Barwal, Vineet; Hait, Soumyarup; Gupta, Neelima; Mishra, Vireshwar; Kumar, Amar; Sharma, Nikita; Kumar, Nakul; Saravanan, L.; Dixit, Dinesh; Sanyal, Biplab; Chaudhary, Sujeet

doi:10.1103/physrevmaterials.6.044203

Cited by 13 publications

(6 citation statements)

References 76 publications

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“…This improvement reflects in the reduced carrier concentration and enhanced Hall mobility as a consequence of suppressed defect scattering in the system. The values of carrier concentration and Hall mobility are consistent with recent report [55]. In order to determine the diffusive transport regime in a disordered system, we used the Ioffel-Regel criterion by calculating the product of Fermi momentum (k F ) and mean free path (l e ).…”

Section: Hall Effectsupporting

confidence: 84%

Bulk-surface coupling in dual topological insulator Bi₁Te₁ and Sb-doped Bi₁Te₁ single crystals via electron-phonon interaction

Mandal

Mallick

Bitla

et al. 2023

J. Phys.: Condens. Matter

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Recently, Bi1Te1 has been proved to be a dual topological insulator (TI), a new subclass of symmetry protected topological phases and predicted to be higher order topological insulator (HOTI). Being a dual TI, Bi1Te1is said to host quasi-1D surface states (SS) due to weak TI phase and topological crystalline insulating (TCI) surface states at the same time. On the other hand, HOTI supports topologically protected hinge states. So, Bi1Te1 is a unique platform to study the electrical signature of topological SS of fundamentally diﬀerent origins. Though there is report of magneto-transport measurements on large scale Bi1Te1thin ﬁlm, the Bi1Te1 single crystal is not studied experimentally till date. Even doping eﬀect in a dual TI Bi1Te1 is missing in literature. In this regard, we performed the perpendicular and parallel ﬁeld magneto-transport measurement on the exfoliated microﬂake of Bi1Te1 and Sb-doped Bi1Te1 single crystals, grown by modiﬁed Bridgmann method. Our metallic sample shows the weak anti-localization behavior analyzed by multi-channel Hikami-Larkin-Nagaoka equation. We observed the presence of a pair of decoupled topological surface states. Further, we extracted the dephasing index (β) from temperature (T)-dependence of phase coherence length (Lφ), following the power law equation (Lφ / ∝T−β). The thickness dependent value of p indicates the transition in dephasing mechanism from electron-electron to electron-phonon interaction with increase in thickness, indicating the enhancement in the strength of bulk-surface coupling.

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Section: Hall Effectsupporting

confidence: 84%

Bulk-surface coupling in dual topological insulator Bi₁Te₁ and Sb-doped Bi₁Te₁ single crystals via electron-phonon interaction

Mandal

Mallick

Bitla

et al. 2023

J. Phys.: Condens. Matter

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“…This size is typical in sputtered films on the PI substrate, 13,28 and should be slightly bigger than the actual value due to the instrumental and strain-induced broadening in β. [29][30][31][32] Based on the XRD patterns, the lattice parameters were calculated. Their dependence on the working pressure is plotted in Fig.…”

Section: Resultsmentioning

confidence: 99%

Effects of working pressure during magnetron sputtering on thermoelectric performance of flexible p-type Bi0.5Sb1.5Te3 thin films

Hu,

Liang,

et al. 2024

Journal of Vacuum Science &Amp; Technology B

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The influence of argon working pressure during magnetron sputtering on thermoelectric properties has been investigated on p-type Bi0.5Sb1.5Te3 flexible films deposited at various working pressures in the range from 2 to 5 Pa. The microstructure and orientations, atomic compositions, and carrier concentration could be regulated by adjusting the working pressure, due to the size-dependent inhibition of the deposition of the sputtered Bi, Sb, and Te atoms from argon ions. Profiting from the occurrence of the (006) orientation, the nearest stoichiometric ratio, the highest carrier concentration and mobility, and the quantum confinement effect, the film deposited at 4 Pa displays the maximum power factor of 1095 μW m−1 K−2 at 360 K. These results suggest that the electrical transport properties of the sputtered flexible thermoelectric thin films can be synergistically optimized by selecting an appropriate working pressure.

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“…The Excel Instruments make sputtering equipped with load-lock is used for the deposition with a base pressure ∼1 × 10 −7 Torr and maintained at a working pressure of 8.4 × 10 −4 Torr during deposition by Argon gas flow (12 sccm). The DC power applied to the Bi and Te targets is fixed to 5 W and 9 W, respectively, as optimized in the previous work [16]. The microstructural analysis of a sample is performed using XRD, x-ray reflectivity (XRR), ω-scan, ϕ -scan and RSM using Malvern PANalytical make x-ray diffractometer of the Empyrean model equipped with Cu K α ( wavelength = 1.5406 Å) source.…”

Section: Methodsmentioning

confidence: 99%

“…The longitudinal MR curve R xx (B) displays classical MR contribution (B 2 dependence) [35] and/or the Shubnikov-de Haas (SdH) oscillations [34]. However, in TIs, which are prone to disorder, SdH oscillations (directly yield n s ) are usually absent [16,36]. It may be noted that even in the absence of SdH oscillations, usually one would first fit the R xy (B) data, and use the same fitting parameters to estimate the classical MR contribution R xx (B), consequently varying it to reach the best agreement for both sets of data i.e.…”

Section: Longitudinal Resistivity and Hall Effectmentioning

confidence: 99%

Topological transport properties of highly oriented Bi₂Te₃ thin film deposited by sputtering

Pandey

Husain

Barwal

et al. 2023

J. Phys.: Condens. Matter

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Topological insulators (TIs) are the promising materials for next-generation technology due to their exotic features such as spin momentum locking, conducting surface states, etc. However, the high-quality growth of TIs by sputtering technique, which is one of the foremost industrial requirements, is extremely challenging. Also, the demonstration of simple investigation protocols to characterize topological properties of TIs using electron-transport methods is highly desirable. Here, we report the quantitative investigation of non-trivial parameters employing magnetotransport measurements on a prototypical highly textured Bi2Te3 TI thin film prepared by sputtering. Through the systematic analyses of the temperature and magnetic field dependent resistivity, all topological parameters associated with TIs, such as coherency factor (α), Berry phase (Φ_B), mass term (m), the dephasing parameter (p), slope of temperature dependent conductivity correction (κ) and the surface state penetration depth (λ) are estimated by using the modified ‘Hikami-Larkin-Nagaoka’, ‘Lu-Shen’ and ‘Altshuler-Aronov’ models. The obtained values of topological parameters are well comparable to those reported on molecular beam epitaxy grown TIs. The epitaxial growth of Bi2Te3 film using sputtering, and investigation of the non-trivial topological states from its electron-transport behaviour are important for their fundamental understanding and technological applications.

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Weak antilocalization and electron-electron interactions in topological insulator BixTey films deposited by sputtering on Si(100)

Cited by 13 publications

References 76 publications

Bulk-surface coupling in dual topological insulator Bi₁Te₁ and Sb-doped Bi₁Te₁ single crystals via electron-phonon interaction

Bulk-surface coupling in dual topological insulator Bi₁Te₁ and Sb-doped Bi₁Te₁ single crystals via electron-phonon interaction

Effects of working pressure during magnetron sputtering on thermoelectric performance of flexible p-type Bi0.5Sb1.5Te3 thin films

Topological transport properties of highly oriented Bi₂Te₃ thin film deposited by sputtering

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Weak antilocalization and electron-electron interactions in topological insulator BixTey films deposited by sputtering on Si(100)

Cited by 13 publications

References 76 publications

Bulk-surface coupling in dual topological insulator Bi1Te1 and Sb-doped Bi1Te1 single crystals via electron-phonon interaction

Bulk-surface coupling in dual topological insulator Bi1Te1 and Sb-doped Bi1Te1 single crystals via electron-phonon interaction

Effects of working pressure during magnetron sputtering on thermoelectric performance of flexible p-type Bi0.5Sb1.5Te3 thin films

Topological transport properties of highly oriented Bi2Te3 thin film deposited by sputtering

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Product

Resources

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Bulk-surface coupling in dual topological insulator Bi₁Te₁ and Sb-doped Bi₁Te₁ single crystals via electron-phonon interaction

Bulk-surface coupling in dual topological insulator Bi₁Te₁ and Sb-doped Bi₁Te₁ single crystals via electron-phonon interaction

Topological transport properties of highly oriented Bi₂Te₃ thin film deposited by sputtering