Weak antilocalization and two-carrier electrical transport in 
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 single crystals 
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Vu, Duy Minh; Shon, Wonhyuk; Rhyee, Jong‐Soo; Sasaki, Minoru; Ohnishi, Akira; Kim, Kiseok; Kim, Heon‐Jung

doi:10.1103/physrevb.100.125162

Cited by 11 publications

(9 citation statements)

References 34 publications

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“…At 300 K the majority carrier are electrons but holes have bigger mobility, which corroborates earlier findings [ 34 , 36 , 37 , 38 ]. Similar electron and hole mobilities as estimated by us, were also found for Bi samples prepared in other conditions and by different deposition methods [ 34 , 36 , 37 ].…”

Section: Resultssupporting

confidence: 92%

“…The theoretical curves successfully reproduce both the B-quadratic increase of MR( B ) and ρ xy ( B ) dependencies for values of n and p of the order of 10 24 m −3 . They correspond to numbers of electrons and holes in bismuth single crystals and in the pure Bi films, which is known to be in the range of n ≈ p ∼ 10 23 –10 24 m −3 [ 35 , 36 ]. At 300 K the majority carrier are electrons but holes have bigger mobility, which corroborates earlier findings [ 34 , 36 , 37 , 38 ].…”

Section: Resultsmentioning

confidence: 99%

“…They correspond to numbers of electrons and holes in bismuth single crystals and in the pure Bi films, which is known to be in the range of n ≈ p ∼ 10 23 –10 24 m −3 [ 35 , 36 ]. At 300 K the majority carrier are electrons but holes have bigger mobility, which corroborates earlier findings [ 34 , 36 , 37 , 38 ]. Similar electron and hole mobilities as estimated by us, were also found for Bi samples prepared in other conditions and by different deposition methods [ 34 , 36 , 37 ].…”

Section: Resultsmentioning

confidence: 99%

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Weak Antilocalization Tailor-Made by System Topography in Large Scale Bismuth Antidot Arrays

et al. 2020

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Using a two-carriers model and the Hikami-Larkin-Nagaoka (HLN) theory, we investigate the influence of large area patterning on magnetotransport properties in bismuth thin films with a thickness of 50 nm. The patterned systems have been produced by means of nanospheres lithography complemented by RF-plasma etching leading to highly ordered antidot arrays with the hexagonal symmetry and a variable antidot size. Simultaneous measurements of transverse and longitudinal magnetoresistance in a broad temperature range provided comprehensive data on transport properties and enabled us to extract the values of charge carrier densities and mobilities. Weak antilocalization signatures observed at low temperatures provided information on spin-orbit scattering length ranging from 20 to 30 nm, elastic scattering length of approx. 60 nm, and strong dependence on temperature phase coherence length. We show that in the absence of antidots the charge carrier transport follow 2-dimensional behavior and the dimensionality for phase-coherent processes changes from two to three dimensions at temperature higher than 10 K. For the antidot arrays, however, a decrease of the power law dephasing exponent is observed which is a sign of the 1D-2D crossover caused by the geometry of the system. This results in changes of scattering events probability and phase coherence lengths depending on the antidot diameters, which opens up opportunity to tailor the magnetotransport characteristics.

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Section: Resultssupporting

confidence: 92%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

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Weak Antilocalization Tailor-Made by System Topography in Large Scale Bismuth Antidot Arrays

et al. 2020

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“…This nonlinear ρ xy (B) implies the existence of both electrons and holes. The S-shaped nonlinearity is similar to that of topological single crystal system Bi 1-x Sb x 45 . In order to determine carrier mobility and carrier density for both type of charge carriers we executed two-carrier model fit with our σ xy and σ xx data, where the field dependence of the conductivity tensor is given by …”

Section: Resultssupporting

confidence: 52%

Defect induced ferromagnetic ordering and room temperature negative magnetoresistance in MoTeP

Pal

Kumar

Shahi

et al. 2021

Sci Rep

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The magneto-transport, magnetization and theoretical electronic-structure have been investigated on type-II Weyl semimetallic MoTeP. The ferromagnetic ordering is observed in the studied sample and it has been shown that the observed magnetic ordering is due to the defect states. It has also been demonstrated that the presence of ferromagnetic ordering in effect suppresses the magnetoresistance (MR) significantly. Interestingly, a change-over from positive to negative MR is observed at higher temperature which has been attributed to the dominance of spin scattering suppression.

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“…Even though there are several tools to investigate the influence of quantum interference, magnetotransport measurement has become a very effective method to experimentally study this phenomenon. While the influence of quantum interference effects on is well investigated and understood, that on is rarely studied 9 . Because of this, we examined the role of on quantum interference phenomena by using a general framework for weak antilocalization in three dimensions (3D), which applies to the consistent description of both and over the wide temperature ranges.…”

Section: Introductionmentioning

confidence: 99%

Weak antilocalization, spin–orbit interaction, and phase coherence length of a Dirac semimetal Bi0.97Sb0.03

Salawu

Yun

Rhyee

et al. 2022

Sci Rep

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The present study develops a general framework for weak antilocalization (WAL) in a three-dimensional (3D) system, which can be applied for a consistent description of longitudinal resistivity $$\rho_{xx} \left( B \right)$$ ρ xx B and Hall resistivity $$\rho_{xy} \left( B \right)$$ ρ xy B over a wide temperature (T) range. Compared to the previous approach Vu et al. (Phys Rev B 100:125162, 2019), which assumes infinite phase coherence length (lϕ) and a zero spin–orbit scattering length (lSO), the present framework is more general, covering high T and the intermediate spin–orbit coupling strength. Based on the new approach, the $$\rho_{xx} \left( B \right)$$ ρ xx B and $$\rho_{xy} \left( B \right)$$ ρ xy B of the Dirac semimetal Bi0.97Sb0.03 was analyzed over a wide T range from 1.7 to 300 K. The present framework not only explains the main features of the experimental data but also enables one to estimate lϕ and lSO at different temperatures. The lϕ has a power-law T dependence at high T and saturates at low T. In contrast, the lSO shows negligible T dependence. Because of the different T dependence, a crossover occurs from the lSO-dominant low-T to the lϕ-dominant high-T regions. Accordingly, the hallmark features of weak antilocalization (WAL) in $$\rho_{xx} \left( B \right)$$ ρ xx B and $$\rho_{xy} \left( B \right)$$ ρ xy B are gradually suppressed across the crossover with increasing T. The present theory describes both low-T and high-T regions successfully, which is impossible in the previous approximate approach. This work offers insights for understanding quantum electrical transport phenomena and their underlying physics, particularly when multiple WAL length scales are competing.

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Weak antilocalization and two-carrier electrical transport in Bi1−xSbx single crystals
Duy Minh Vu
¹
,
Wonhyuk Shon
²
,
Jong‐Soo Rhyee
³

et al.

Cited by 11 publications

References 34 publications

Weak Antilocalization Tailor-Made by System Topography in Large Scale Bismuth Antidot Arrays

Weak Antilocalization Tailor-Made by System Topography in Large Scale Bismuth Antidot Arrays

Defect induced ferromagnetic ordering and room temperature negative magnetoresistance in MoTeP

Weak antilocalization, spin–orbit interaction, and phase coherence length of a Dirac semimetal Bi0.97Sb0.03

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Weak antilocalization and two-carrier electrical transport in Bi1−xSbx single crystals Duy Minh Vu1, Wonhyuk Shon2, Jong‐Soo Rhyee3 et al.

Cited by 11 publications

References 34 publications

Weak Antilocalization Tailor-Made by System Topography in Large Scale Bismuth Antidot Arrays

Weak Antilocalization Tailor-Made by System Topography in Large Scale Bismuth Antidot Arrays

Defect induced ferromagnetic ordering and room temperature negative magnetoresistance in MoTeP

Weak antilocalization, spin–orbit interaction, and phase coherence length of a Dirac semimetal Bi0.97Sb0.03

Contact Info

Product

Resources

About

Weak antilocalization and two-carrier electrical transport in Bi1−xSbx single crystals
Duy Minh Vu
¹
,
Wonhyuk Shon
²
,
Jong‐Soo Rhyee
³

et al.