“…The performance of thermoelectric materials is evaluated by the dimensionless figure of merit ZT , which is determined as ZT = S 2 σΤ/(κ e + κ L ) . Therefore, to obtain a high thermoelectric performance, a large Seebeck coefficient S and high electrical conductivity σ are desired, while the thermal conductivity κ, comprising the electronic contribution κ e and the lattice contribution κ L , should be minimized. − Over the past decades, several advanced thermoelectric materials have been found in the group IV–VI semiconductors, such as PbQ, − SnQ (Q = S, Se, and Te), − and GeTe. , Various strategies have been developed and successfully applied to optimize their thermoelectric performances, such as band convergence, − resonant level, , nanostructuring, ,− discordant atoms, − and intrinsically large anharmonicity, , and tremendous progress has been achieved. However, because of their binary composition and simple crystal structure, most of the developed group IV–VI semiconductors still exhibit a relatively high intrinsic thermal conductivity.…”