Weak ferromagnetism in InSe:Mn layered crystals

Slyn'ko, V. V.; Khandozhko, A. G.; Kovalyuk, Z. D.; Zaslonkin, A. V.; Слынько, В. И.; Arciszewska, Μ.; Dobrowolski, W.

doi:10.1134/1.1992631

Cited by 10 publications

(11 citation statements)

References 8 publications

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“…It is found that all the wafers under study are rather homogeneous and contain no microscopic inclusions of second phases. In complete agreement with preliminary predic tions based on the data of [25,26], the Sn concentra tion increases from the beginning to the end of the ingots, overlapping a wide range of varying x from 0.05 to 0.21 (Fig. 3).…”

Section: Methodssupporting

confidence: 86%

Vanadium deep impurity level in diluted magnetic semiconductors Pb1 − x − y Sn x V y Te

et al. 2012

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The crystal structure, Sn and V distribution over the length of single crystal ingots, and galvano magnetic effects in low magnetic fields (4.2 K ≤ T ≤ 300 K, B ≤ 0.07 T) in Pb 1 -x -y Sn x V y Te alloys (x = 0.05-0.21, y ≤ 0.015) are studied. It is shown that all the samples are single phase, while the Sn and V concentrations exponentially increase from the beginning to the end of the ingots. Upon doping with V, a decrease in the con centration of free holes and a metal-insulator transition are found. They are related to the appearance of a deep impurity level of V in the band gap, electron redistribution between the level and the valence band, and pinning of the Fermi level to the impurity level. The shift rate of the V level relative to the conduction band bottom is determined and a diagram of the reconstruction of the electronic structure of the Pb 1 -x -y Sn x V y Te alloy upon varying the host composition is suggested.

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Section: Methodssupporting

confidence: 86%

Vanadium deep impurity level in diluted magnetic semiconductors Pb1 − x − y Sn x V y Te

et al. 2012

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“…The studies of the III-VI (III -In, Ga; VI -S, Se) crystals doped with d-TM (Mn, Fe) have shown that these semiconductors display nontrivial magnetic properties. In InSe with 1.25 at.% Mn two magnetic subsystems containing Mn ions inside ionic--covalent layers and interlayer van der Waals gaps were discovered [1,2]. The temperature hysteresis of magnetic susceptibility (MS) was observed in In 1−x Mn x Se (x = 0.01; 0.10) DMS in the temperature range 90-290 K [3].…”

Section: Introductionmentioning

confidence: 93%

Ferromagnetism of Narrow-Gap Ge_1-x-ySn_xMn_yTe and Layered In_1-xMn_xSe Semiconductors

et al. 2008

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Magnetic susceptibility, Hall effect and resistivity of narrow-gap Ge 1−x−y Sn x Mn y Te single crystals (x = 0.083 ÷ 0.115; y = 0.025 ÷ 0.124) were investigated in the temperature range 4.2-300 K revealing a ferromagnetic ordering at T C ≈ 50 K. Temperature dependence of magnetization indicates a superparamagnetic phase with magnetic clusters arranging in a spin glass state below the freezing temperature T f . Magnetic structure of InSe Mn 2D-ferromagnetic single crystals was studied by SQUID magnetometry, neutron diffraction, secondary ion mass spectroscopy, and wave dispersive spectra. Hysteresis loops of magnetization were observed at least up to 350 K. The cluster model of ferromagnetism is considered. The formation of self-assembled superlattice ferromagnetic InSe:Mn/antiferromagnetic MnSe during growth process and further annealing was established.

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“…The presence of a magnetic field during intercalation can result in the fact that a fraction of the cobalt atoms intercalates in the structure of the layer pack age -Se-Ga-Ga-Se-, which, probably, does not occur for intercalation without a magnetic field. In this case, the formation of Co-Se-Co pairs is possi ble, in which one of the cobalt atoms is localized in the interlayer space, and another, in the layer, which is similar to GaSe [15] and InSe [13] single crystals doped with Mn. Such an exchange interaction can combine the neighboring layers, as a result of which three dimensional magnetic order is formed, the proof of which is the presence of magnetic hysteresis (Fig.…”

Section: Resultsmentioning

confidence: 95%

“…In [12,13], the presence of weak ferromagnetism in InSe layered semiconductors doped with Mn was shown. Since cobalt is a ferromagnetic material, the magnetic field can affect its incorporation into layered semiconductors.…”

Section: Resultsmentioning

confidence: 98%

Ferromagnetism of layered GaSe semiconductors intercalated with cobalt

et al. 2012

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Weak ferromagnetism in InSe:Mn layered crystals

Cited by 10 publications

References 8 publications

Vanadium deep impurity level in diluted magnetic semiconductors Pb1 − x − y Sn x V y Te

Vanadium deep impurity level in diluted magnetic semiconductors Pb1 − x − y Sn x V y Te

Ferromagnetism of Narrow-Gap Ge_1-x-ySn_xMn_yTe and Layered In_1-xMn_xSe Semiconductors

Ferromagnetism of layered GaSe semiconductors intercalated with cobalt

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Weak ferromagnetism in InSe:Mn layered crystals

Cited by 10 publications

References 8 publications

Vanadium deep impurity level in diluted magnetic semiconductors Pb1 − x − y Sn x V y Te

Vanadium deep impurity level in diluted magnetic semiconductors Pb1 − x − y Sn x V y Te

Ferromagnetism of Narrow-Gap Ge1-x-ySnxMnyTe and Layered In1-xMnxSe Semiconductors

Ferromagnetism of layered GaSe semiconductors intercalated with cobalt

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Ferromagnetism of Narrow-Gap Ge_1-x-ySn_xMn_yTe and Layered In_1-xMn_xSe Semiconductors