Weak-field magnetoresistance of two-dimensional electrons in In0.53Ga0.47As/InP heterostructures in the persistent photoconductivity regime

Bykanov, D. D.; Kreshchuk, A. M.; Новиков, С. В.; Polyanskaya, T. A.; Savel'ev, I. G.

doi:10.1134/1.1187530

Cited by 12 publications

(5 citation statements)

References 11 publications

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“…However, when the systems has high mobility carriers, the applicability of the Hikami theory is limited. Indeed, it works, when ≪ tr , where tr = ℏ∕2 tr is the transport magnetic field characterizing the boundary between the diffusion and ballistic approximations, and tr is the transport mean free path averaged over all groups of carriers, taking into account the weight factors proportional to the contribution of each group i to the total conductivity of the system [25,4]. The gate voltage dependences of partial and total conductivities of the studied system are shown in Fig.…”

Section: Discussionmentioning

confidence: 99%

Weak antilocalization in partially relaxed 200-nm HgTe films

Savchenko,

Kozlov,

Kvon

et al. 2020

Preprint

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The anomalous magnetoresistance caused by the weak antilocalization (WAL) effects in 200-nm HgTe films is experimentally studied. The film is a high quality 3D topological insulator with much stronger spatial separation of surface states than in previously studied thinner HgTe structures. However, in contrast to that films, the system under study is characterized by a reduced partial strain resulting in an almost zero bulk energy gap. It has been shown that at all positions of the Fermi level the system exhibits a WAL conductivity correction superimposed on classical parabolic magnetoresistance. Since high mobility of carriers, the analysis of the obtained results was performed using a ballistic WAL theory. The maximum of the WAL conductivity correction amplitude was found at a Fermi level position near the bulk energy gap indicating to full decoupling of the surface carriers in these conditions. The WAL amplitude monotonously decreases when the density of either bulk electrons or holes increases that results from the increasing coupling between surface and bulk carriers.

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Section: Discussionmentioning

confidence: 99%

Weak antilocalization in partially relaxed 200-nm HgTe films

Savchenko,

Kozlov,

Kvon

et al. 2020

Preprint

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“…The traditional method for measuring the quantum lifetime τ q in a 2D electron gas is based on studying the dependence of the amplitude of the Shubnikov-de Haas (SdH) oscillations on the magnetic field (B) [25][26][27][28][29][30]. In 2D electron systems with isotropic mobility µ = µ x = µ y , weak-field SdH oscillations are described by the following relation [28]:…”

Section: Quantum Lifetimementioning

confidence: 99%

Impact of illumination on quantum lifetime in selectively doped GaAs single quantum wells with short-period AlAs/GaAs superlattice barriers

Bykov A. A.,

Nomokonov D. V.,

Goran A. V.

et al. 2023

Semiconductors

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Impact of illumination on high-mobility dense 2D electron gas in selectively doped single GaAs quantum well with short-period AlAs/GaAs superlattice barriers at T=4.2 K in magnetic fields B<2 T has been studied. It was demonstrated that illumination at low temperatures gives rise to enhancement of electron density, mobility and quantum lifetime in studied heterostructures. The enhancement of quantum lifetime after illumination for single GaAs quantum well with modulated superlattice doping had been explained as consequence of decrease in effective concentration of remote ionized donors. Keywords: persistent photoconductivity, quantum lifetime, anisotropic mobility, superlattice barriers.

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“…In order to mathematically describe MISO amplitude damping in low magnetic fields we introduce one more factor in addition to the Dingle factor, similar to how it is done for SdH oscillations amplitude in non-homogeneous 2D electron gas [36]:…”

Section: Microwave-induced Zero-resistance States In a High-mobility ...mentioning

confidence: 99%

“…This equation quantitatively describes ρ MISO /ρ 0 in the whole experimental range of magnetic fields with the following fitting parameters: A MISO = 0.4, τ MISO q = 22 ps, τ DAMP q = 46 ps, b = 6. The theoretic model suggested in [36] describes Shubnikov-de Haas oscillation damping in a single-subband system with large-scale fluctuations of electron concentration; the model suggests b = 2. However, our experimental data is best fitted with b = 6, while with b = 2 the calculated dependence is much higher than experimental curve in the area of low magnetic fields.…”

Section: Microwave-induced Zero-resistance States In a High-mobility ...mentioning

confidence: 99%

Microwave-induced zero-resistance states in a high-mobility two-subband electron system

Быков

Goran

Bakarov

2018

J. Phys. D: Appl. Phys.

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In this study we used selectively-doped GaAs/AlAs heterostructure to fabricate a high-mobility two-subband electronic system with substantially different concentration of electrons in subbands. We observe microwave photoresistance at high numbers of magneto-intersubband oscillations (MISO). The system under study demonstrates microwave-induced resistance oscillations (MIRO) and MISO interference. MIRO in the studied two-subband system appear in lower magnetic fields comparing to MISO. This is an indication of some unknown mechanism that exists in the two-subband system and is responsible for MISO amplitude damping in low magnetic fields, while it does not affect the MIRO amplitude. Zero resistance states (ZRS) appear in the system under study under microwave irradiation in the narrow range of magnetic fields near the MISO maximum.

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Weak-field magnetoresistance of two-dimensional electrons in In0.53Ga0.47As/InP heterostructures in the persistent photoconductivity regime

Cited by 12 publications

References 11 publications

Weak antilocalization in partially relaxed 200-nm HgTe films

Weak antilocalization in partially relaxed 200-nm HgTe films

Impact of illumination on quantum lifetime in selectively doped GaAs single quantum wells with short-period AlAs/GaAs superlattice barriers

Microwave-induced zero-resistance states in a high-mobility two-subband electron system

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