Weak interaction between germanene and GaAs(0001) by H intercalation: A route to exfoliation

Abstract

Epitaxial germanene on a semiconducting GaAs(0001) substrate is studied by ab initio calculations. The germanene-substrate interaction is found to be strong for direct contact but can be substantially reduced by H intercalation at the interface. Our results indicate that it is energetically possible to take the germanene off the GaAs(0001) substrate. While mounted on the substrate, the electronic structure shows a distinct Dirac cone shift above the Fermi energy with a splitting of 175meV. On the other hand, we find for a free standing sheet a band gap of 24meV, which is due to the intrinsic spin orbit coupling.

Tunable electronic properties in the van der Waals heterostructure of germanene/germanane

“…It can be seen that the Bernal pattern AB-2 is more stable than other three ones by ~20 meV, [ [26][27] In these cases, the deduced v f is considerably high (Table I), comparable to unsuspended germanene (1.7×10 6 m/s). [28] When used as FET, the source and drain electrodes should be connected directly to germanene while the germanane underneath may actually act as a back-gate to precisely control the current on-off ratio.…”

Controlling electronic and optical properties of layered SiC and GeC sheets by strain engineering

“…ACCEPTED MANUSCRIPT 14 stacking SiC under in-plane and out-of-plane strain are calculated and displayed in Fig. 6 and Fig.…”

“…Until now, graphene-like Si and Ge, which are known as silicene [1][2][3][4][5][6][7][8][9][10] and germanene [11][12][13][14], have been investigated both experimentally and theoretically. According to previous studies, stable silicene and germanene all prefer to maintain a buckled structure other than a planar structure like graphene.…”

Tuning the Structural, Electronic, and Magnetic Properties of Germanene by the Adsorption of 3d Transition Metal Atoms

“…Around the adsorption site, we find a variable Ge−Ge bond lengths 2.45Å to 2.81Å for all the adsorbent, see Table 2. However, the Ge−Ge bond length is slightly modified as compared to pristine germanene with a value of 2.44Å 3,12,20,31 . The buckling in the germanene sheet varies from 0.61Å to 0.76Å.…”