Weak Localization and Electron–Electron Interaction Effects in Indium Zinc Oxide Films

Shinozaki, B.; Makise, Kazumasa; Shimane, Yukio; Nakamura, Hiroaki; Inoue, Kazuyoshi

doi:10.1143/jpsj.76.074718

Cited by 36 publications

(21 citation statements)

References 30 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In the case of weak spin orbit scattering, the correction brings about the negative magnetoresistivity. Such a negative ρ in transparent oxide materials has been investigated in two-and three-dimensional a-In 2 O 3 -ZnO films [3]. Then, the present results of ρ are explained by the competition in the destructions of superconductivity and localization (and/or electron-electron interaction) by the magnetic field.…”

Section: Resultsmentioning

confidence: 65%

See 1 more Smart Citation

Superconductivity in transparent zinc-doped In₂O₃films having low carrier density

Makise¹,

Kokubo²,

Takada³

et al. 2008

Science and Technology of Advanced Materials

Self Cite

View full text Add to dashboard Cite

Thin polycrystalline zinc-doped indium oxide (In 2 O 3 -ZnO) films were prepared by post-annealing amorphous films with various weight concentrations x of ZnO in the range 0 x 0.06. We have studied the dependences of the resistivity ρ and Hall coefficient on temperature T and magnetic field H in the range 0.5 T 300 K, H 6 Tfor 350 nm films annealed in air. Films with 0 x 0.03 show the superconducting resistive transition. The transition temperature T c is below 3.3 K and the carrier density n is about 10 25 -10 26 m −3 . The annealed In 2 O 3 -ZnO films were examined by transmission electron microscopy and x-ray diffraction analysis revealing that the crystallinity of the films depends on the annealing time. We studied the upper critical magnetic field H c2 (T ) for the film with x = 0.01. From the slope of dH c2 /dT , we obtain the coherence length ξ(0) ≈ 10 nm at T = 0 K and a coefficient of electronic heat capacity that is small compared with those of other oxide materials.

show abstract

Section: Resultsmentioning

confidence: 65%

“…Recently, for a-In 2 O 3 -ZnO films, we have examined the electrical properties in the temperature range of 2 < T < 300 K [3]. For films with thickness d = 350 nm and weight concentration of ZnO x ∼ 0.1, the temperature dependence of the resistivity ρ(T ) shows metallic characteristics, that is, dρ/dT > 0, in a wide temperature range.…”

Section: Introductionmentioning

confidence: 99%

Superconductivity in transparent zinc-doped In₂O₃films having low carrier density

Makise¹,

Kokubo²,

Takada³

et al. 2008

Science and Technology of Advanced Materials

Self Cite

View full text Add to dashboard Cite

show abstract

“…including ITO [67,129,[136][137][138][139][140], and ZnO based materials [141][142][143]. In this subsection, we address the experimental 3D, 2D, and 1D WL effects in ITO thick films, thin films, and nanowires, respectively.…”

Section: Weak-localization Effect and Electron Dephasing Timementioning

confidence: 99%

Electronic conduction properties of indium tin oxide: single-particle and many-body transport

Lin

2014

J. Phys.: Condens. Matter

View full text Add to dashboard Cite

Abstract.Indium tin oxide (Sn-doped In 2 O 3−δ or ITO) is an interesting and technologically important transparent conducting oxide. This class of material has been extensively investigated for decades, with research efforts focusing on the application aspects. The fundamental issues of the electronic conduction properties of ITO from 300 K down to low temperatures have rarely been addressed. Studies of the electricaltransport properties over a wide range of temperature are essential to unraveling the underlying electronic dynamics and microscopic electronic parameters. In this Topical Review, we show that one can learn rich physics in ITO material, including the semiclassical Boltzmann transport, the quantum-interference electron transport, and the electron-electron interaction effects in the presence of disorder and granularity. To reveal the avenues and opportunities that the ITO material provides for fundamental research, we demonstrate a variety of charge transport properties in different forms of ITO structures, including homogeneous polycrystalline films, homogeneous singlecrystalline nanowires, and inhomogeneous ultrathin films. We not only address new physics phenomena that arise in ITO but also illustrate the versatility of the stable ITO material forms for potential applications. We emphasize that, microscopically, the rich electronic conduction properties of ITO originate from the inherited freeelectron-like energy bandstructure and low-carrier concentration (as compared with that in typical metals) characteristics of this class of material. Furthermore, a low carrier concentration leads to slow electron-phonon relaxation, which causes (i) a small residual resistance ratio, (ii) a linear electron diffusion thermoelectric power in a wide temperature range 1-300 K, and (iii) a weak electron dephasing rate. We focus our discussion on the metallic-like ITO material.

show abstract

“…The rate 1/τ in el−ph due to el-ph inelastic scattering is given by the relation 1/τ in el−ph = BT 3 in the clean 3D limit, as shown by the dotted line, where the coefficient B depends on the electron-phonon coupling constant and the Debye temperature. 21 In a previous paper, 22 we gave a detailed discussion on the inelastic scattering rate of 2D homogeneous In 2 O 3 -ZnO films. In the 3D homogeneous 23 and 1D 24 cases, the temperature dependence of the inelastic scattering rate has been investigated for indium tin oxide films.…”

confidence: 99%

Weak localization and percolation effects in annealed In2O3-ZnO thin films

et al. 2011

View full text Add to dashboard Cite

We have investigated the temperature T and magnetic field H dependences of the sheet resistance R□ of thin (In2O3)0.975-(ZnO)0.025 films with different resistivities and carrier densities prepared by postannealing in air at various annealing temperatures Ta. Regarding the magnetoconductance Δσ(H) ≡ 1/R□(H) − 1/R□(0) of films with large values of sheet resistance R□, agreement between weak localization theory and the data cannot be obtained for any value of the localization length L in (T) = D τ in (T) , where D and τin are the diffusion constant and inelastic scattering time, respectively. Taking account of the inhomogeneous morphology confirmed by Scanning Electron Microscopy (SEM) observation, we introduced the effective sheet resistance R□eff given by R□eff = α × R□meas., where the strength of reduction factor α is less than unit, α ⩽ 1. Using a suitable value of α(Ta), we successfully fitted the theory to data for Δσeff(H, T), regarding Lin2(T) as a fitting parameter in the region 2.0 K⩽T ⩽ 50 K. It was confirmed that the rate 1/τin(T) is given by the sum of the electron-electron and electron-phonon inelastic scattering rates

show abstract

Weak Localization and Electron–Electron Interaction Effects in Indium Zinc Oxide Films

Cited by 36 publications

References 30 publications

Superconductivity in transparent zinc-doped In₂O₃films having low carrier density

Superconductivity in transparent zinc-doped In₂O₃films having low carrier density

Electronic conduction properties of indium tin oxide: single-particle and many-body transport

Weak localization and percolation effects in annealed In2O3-ZnO thin films

Contact Info

Product

Resources

About

Weak Localization and Electron–Electron Interaction Effects in Indium Zinc Oxide Films

Cited by 36 publications

References 30 publications

Superconductivity in transparent zinc-doped In2O3films having low carrier density

Superconductivity in transparent zinc-doped In2O3films having low carrier density

Electronic conduction properties of indium tin oxide: single-particle and many-body transport

Weak localization and percolation effects in annealed In2O3-ZnO thin films

Contact Info

Product

Resources

About

Superconductivity in transparent zinc-doped In₂O₃films having low carrier density

Superconductivity in transparent zinc-doped In₂O₃films having low carrier density