Weak Localization and Weak Antilocalization in Double-Gate a-InGaZnO Thin-Film Transistors

Wang, Wei-Hsiang; Heredia, Elica; Lyu, Syue-Ru; Liu, Shu-Hao; Liao, Po‐Yung; Chang, Ting‐Chang; Jiang, Pei-hsun

doi:10.1109/led.2017.2786547

Cited by 4 publications

(2 citation statements)

References 27 publications

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“…Indium oxide (In 2 O 3 ) films have high electron mobility, high carrier density, and excellent optical transmittance compared with other oxide semiconductors [17,18], making them an ideal material for transparent thin film transistors [19]. In order to obtain high-quality In 2 O 3 films, other elements are added, such as InSnO (ISO) [20][21][22], InZnSnO (IZTO) [23][24][25][26], InGaZnO (IGZO) [27][28][29][30], etc. The Zr element has a strong binding capacity to oxygen (Zr-O: 776 KJ/mol), higher than that of the In element to oxygen (In-O: 348 KJ/mol), which can inhibit the formation of oxygen vacancies.…”

Section: Introductionmentioning

confidence: 99%

The Effect of Zirconium Doping on Solution-Processed Indium Oxide Thin Films Measured by a Novel Nondestructive Testing Method (Microwave Photoconductivity Decay)

Zhang

Zhou

et al. 2019

Coatings

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Solution-processed indium oxide is an ideal transparent semiconductor material with wide band gap. Zirconium is an element characterized by a strong binding ability to oxygen which can inhibit the formation of oxygen vacancies and reduce the surface defect state. In this paper, zirconium doped indium oxide (InxZryO) thin films were prepared by the solution method, with indium oxide being doped with zirconium in order to tune the relative number of oxygen vacancies. The influence of the Zr doping concentration and the post-annealed temperature on the properties of the InxZryO thin films was investigated. The results show that the doping process improves the crystallinity and relative density of the obtained films. A novel nondestructive method named microwave photoconductivity decay (μ-PCD) was used to evaluate the quality of InxZryO thin films by simply measuring their response under laser irradiation. The relative number of oxygen vacancies and the minority carrier concentration achieved minimum values at 10 at.% Zr doping concentration. Furthermore, InxZryO thin films with optimal properties from an electrical point of view were obtained at 10 at.% Zr doping concentration, annealed at 400 °C. Characterized by an average transmittance above 90% in the visible range, the obtained InxZryO thin films can be used as active layer materials in the fabrication of high-performance thin film transistor (TFT) devices.

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Section: Introductionmentioning

confidence: 99%

The Effect of Zirconium Doping on Solution-Processed Indium Oxide Thin Films Measured by a Novel Nondestructive Testing Method (Microwave Photoconductivity Decay)

Zhang

Zhou

et al. 2019

Coatings

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“…This effect, is similar to the MME widely observed in dual‐gate thin‐film transistors, in which applying double gates biases would enhance the charge transport in the channel with more weighted bulk accumulation of carriers. [ 37–41 ] In details as shown by Figure 3b,c, the gate voltage could reduce the built‐in electric field formed at the charge‐transfer interface, and facilitates the hole distribution away from the interface, similar to the positive bias situation in a p–n junction; [ 42 ] while in turn, the electric field from the charge‐transfer interface could also reorganize the energy alignment at the gate dielectric interface, modulating the gate accumulated carriers’ spatial distribution with respect to the semiconductor–dielectric interface.…”

Section: Resultsmentioning

confidence: 99%

Surface‐Doping‐Induced Mobility Modulation Effect for Transport Enhancement in Organic Single‐Crystal Transistors

Wang

Guo

et al. 2022

Advanced Materials

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Molecular doping has conventionally been an effective way to improve the electrical‐transport performances in organic field‐effect transistors (OFETs), while corresponding mechanisms associated with specific doping techniques have been less investigated and discussed in detail. Here, based on ultrathin dinaphtho[2,3‐b:2′,3′‐f]‐thieno[3,2‐b]thiophene (DNTT) single crystals, robust transconductance enhancements are realized in OFETs upon surface molecular doping realized via van der Waals epitaxially growing crystalline 1,3,4,5,7,8‐hexafluoro‐tetracyanonaphthoquinodimethane (F6TCNNQ) onto the single crystal's surface. It is proposed that it is the mobility modulation effect (MME) from the interactions between charge‐transfer interface and gate electric field, that contributes to more weighted bulk carriers, and finally improves charge‐transport performances. The evaluations are further supported by scanning Kelvin probe microscopy (SKPM) surface potential characterizations, which manifest the gate‐induced more delocalized holes near the charge‐transfer interfaces. Space‐charge‐limited current (SCLC) investigations, numerical calculations, and theoretical mobility modeling are also performed to corroborate the analysis. This study can deepen the understanding of charge transport in doped semiconductors and provide effective ways for optimizing the electrical performance of organic devices.

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High‐performance vacuum‐processed metal oxide thin‐film transistors: A review of recent developments

2020

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Since 2010, vacuum‐processed oxide semiconductors have greatly improved with the publication of more than 1,300 related papers. Although the number of researches on oxide semiconductors has continued to increase year by year, the average field‐effect mobility of oxide semiconductor thin‐film transistors (TFTs) has not shown significant improvement; from 2010 to 2018; the average field‐effect mobility of vacuum‐processed n‐type oxide TFTs is around 20 cm2/Vs. To investigate the obstacles for performance improvements, the latest progress and researches on vacuum‐processed oxide semiconductor TFTs for high performance over the past decade are highlighted, along with the pros and cons of each technology. Finally, complementary metal oxide semiconductor (CMOS) logic circuits composed of both n‐ and p‐type oxide semiconductor TFTs are introduced, and future prospects for this state‐of‐the‐art research on the oxide semiconductors are presented.

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Weak Localization and Weak Antilocalization in Double-Gate a-InGaZnO Thin-Film Transistors

Cited by 4 publications

References 27 publications

The Effect of Zirconium Doping on Solution-Processed Indium Oxide Thin Films Measured by a Novel Nondestructive Testing Method (Microwave Photoconductivity Decay)

The Effect of Zirconium Doping on Solution-Processed Indium Oxide Thin Films Measured by a Novel Nondestructive Testing Method (Microwave Photoconductivity Decay)

Surface‐Doping‐Induced Mobility Modulation Effect for Transport Enhancement in Organic Single‐Crystal Transistors

High‐performance vacuum‐processed metal oxide thin‐film transistors: A review of recent developments

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