Weak localization in CdO thin films prepared by sol–gel method

Wang, W.J.; Xie, Xinjian; Liu, J.Y.; Gao, Kuang-Hong

doi:10.1016/j.ssc.2016.04.006

Cited by 10 publications

(2 citation statements)

References 18 publications

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“…Consequently, it is understandable that the WL effect as one of typical quantum transport phenomena survives at room temperature (see Figure b). Similarly, the WL effect at relatively high temperatures ( T > 100 K) has been found in ZnO-based transport systems but not discussed in detail. − In contrast, the WL effect only appears up at low temperatures ( T < 100 K) in other oxides such as In 2 O 3 , ,− SnO 2 , ,− and CdO. , In conventional nonoxide materials like AlGaAs/GaAs heterostructures, the WL effect generally appears up at cryogenic temperatures. Therefore, there may be some distinctive characters in ZnO-based systems, which is also why Zn 1– x Mg x O/ZnO heterostructures are studied in this work.…”

Section: Resultsmentioning

confidence: 99%

“…51−53 In contrast, the WL effect only appears up at low temperatures (T < 100 K) in other oxides such as In 2 O 3 , 50,54−57 SnO 2 , 25,58−60 and CdO. 61,62 In conventional nonoxide materials like AlGaAs/GaAs heterostructures, 63 the WL effect generally appears up at cryogenic temperatures. Therefore, there may be some distinctive characters in ZnO-based systems, which is also why Zn 1−x Mg x O/ZnO heterostructures are studied in this work.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

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Room-Temperature Quantum Transport Phenomenon in Low-Temperature-Grown Zn_1–xMg_xO/ZnO Heterostructures

Gao

Rong

et al. 2020

J. Phys. Chem. C

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Quantum transport phenomenon such as quantum Hall effect usually appears up at cryogenic temperature. Here, we observe a room-temperature quantum transport phenomenon in ZnO-based two-dimensional systems. We successfully fabricate Zn1–x Mg x O/ZnO heterostructures by using magnetron sputtering with a low growth temperature which makes it feasible to obtain flexible heterostructures. Electrical transport properties of these heterostructures are studied. A parabolic negative magnetoresistance is clearly observed in a wide temperature range, which can be accurately described by the weak localization theory. By analyzing the temperature dependence of the dephasing length, it is found that the electron–electron scattering combined with two-dimensional electron–phonon scattering dominates the dephasing process for electrons. Importantly, the observed negative magnetoresistance persists up to 300 K. This indicates that room-temperature weak localization effect appears up, which can be attributed to weak electron–phonon scattering and small electron mobility. The present work provides a reference for realizing room-temperature quantum effect which is beneficial to develop quantum-interference devices.

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Section: Resultsmentioning

confidence: 99%

Section: ■ Results and Discussionmentioning

confidence: 99%

Room-Temperature Quantum Transport Phenomenon in Low-Temperature-Grown Zn_1–xMg_xO/ZnO Heterostructures

Gao

Rong

et al. 2020

J. Phys. Chem. C

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Nickel Oxide–Based Heterostructures with Large Band Offsets

Karsthof

Wenckstern

Zúñiga‐Pérez³

et al. 2019

Physica Status Solidi (b)

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We present research results on the electronic transport in heterostructures based on p-type nickel oxide (NiO) with the n-type oxide semiconductors zinc oxide (ZnO) and cadmium oxide (CdO). NiO is a desirable candidate for application in (opto-)electronic devices. However, because of its small electron affinity, heterojunctions with most n-type oxide semiconductors exhibit conduction and valence band offsets at the heterointerface in excess of 1 eV. ZnO/NiO junctions exhibit a so called type-II band alignment, making electron-hole recombination the only process by which a current can vertically flow through the structure. These heterojunctions are nevertheless shown to be of practical use in efficient optoelectronic devices, as exemplified here by our UVconverting transparent solar cells. These devices, although exhibiting high conversion efficiencies, suffer from two light-activated recombination channels connected to the type-II interface, one of which we identify and analyse in more detail here. Furthermore, CdO/NiO contacts were studied a heterostructure with even larger band offsets such that a type-III band alignment is achieved. This situation theoretically enables the development of a 2-dimensional electronic system consisting of topologically protected states. We present experiments demonstrating that the CdO/NiO heterostructure indeed hosts a conductive layer absent in both materials when studied separately.

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Effect of porosity on the enhancement of relative magnetoconductance in porous Si nanostructures: a comparative study with Si nanowires

et al. 2017

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Weak localization in CdO thin films prepared by sol–gel method

Cited by 10 publications

References 18 publications

Room-Temperature Quantum Transport Phenomenon in Low-Temperature-Grown Zn_1–xMg_xO/ZnO Heterostructures

Room-Temperature Quantum Transport Phenomenon in Low-Temperature-Grown Zn_1–xMg_xO/ZnO Heterostructures

Nickel Oxide–Based Heterostructures with Large Band Offsets

Effect of porosity on the enhancement of relative magnetoconductance in porous Si nanostructures: a comparative study with Si nanowires

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Weak localization in CdO thin films prepared by sol–gel method

Cited by 10 publications

References 18 publications

Room-Temperature Quantum Transport Phenomenon in Low-Temperature-Grown Zn1–xMgxO/ZnO Heterostructures

Room-Temperature Quantum Transport Phenomenon in Low-Temperature-Grown Zn1–xMgxO/ZnO Heterostructures

Nickel Oxide–Based Heterostructures with Large Band Offsets

Effect of porosity on the enhancement of relative magnetoconductance in porous Si nanostructures: a comparative study with Si nanowires

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Room-Temperature Quantum Transport Phenomenon in Low-Temperature-Grown Zn_1–xMg_xO/ZnO Heterostructures

Room-Temperature Quantum Transport Phenomenon in Low-Temperature-Grown Zn_1–xMg_xO/ZnO Heterostructures