Weakly localized bosons

Das, Diptarka; Doniach, Sebastian

doi:10.1103/physrevb.57.14440

Cited by 21 publications

(27 citation statements)

References 25 publications

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“…This is essentially a two parameter scaling formula, which is expected of a bosonic system [15]. For MoGe films [2], z = 1 and ν = 4/3, and hence, 2α = 4.…”

Section: Scaling At the Zero Temperature Phase Transitionsmentioning

confidence: 99%

Bose metal: Gauge-field fluctuations and scaling for field-tuned quantum phase transitions

Das

Doniach

2001

Phys. Rev. B

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In this paper, we extend our previous discussion of the Bose metal to the field tuned case. We point out that the recent observation of the metallic state as an intermediate phase between the superconductor and the insulator in the field tuned experiments on MoGe films is in perfect consistency with the Bose metal scenario. We establish a connection between general dissipation models and gauge field fluctuations and apply this to a discussion of scaling across the quantum phase boundaries of the Bose metallic state. Interestingly, we find that the Bose metal scenario implies a possible two parameter scaling for resistivity across the Bose metal-insulator transition, which is remarkably consistent with the MoGe data. Scaling at the superconductor-metal transition is also proposed, and a phenomenolgical model for the metallic state is discussed. The effective action of the Bose metal state is described and its low energy excitation spectrum is found to be ω ∝ k 3 .

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“…This is essentially a two parameter scaling formula, which is expected of a bosonic system [15]. For MoGe films [2], z = 1 and ν = 4/3, and hence, 2α = 4.…”

Section: Scaling At the Zero Temperature Phase Transitionsmentioning

confidence: 99%

Bose metal: Gauge-field fluctuations and scaling for field-tuned quantum phase transitions

Das

Doniach

2001

Phys. Rev. B

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“…As a function of decreasing temperature, the resistance first decreases at high temperatures, reaches a minimum at an intermediate temperature, starts to increase at lower temperatures until it reaches a local maximum, and then it drops to zero resistance below the superconducting transition temperature. Although such a re-entrant behavior is both experimentally [1][2][3][4] and theoretically [5][6][7][8][9] in homogeneously disor dimensional (2D) thin films. These studies suggest that there exists a defect-sc dominated metallic (that is, resistance being temperature-independen zero-temperature critical sheet resistance at the transition from super perconducting as T 0, otherwise they are insulating.…”

mentioning

confidence: 99%

Doping Controlled Superconductor-Insulator Transition inBi2Sr2−xLaxCaCu2O8+
Oh
¹
,
Crane
²
,
Harlingen
³

et al. 2006
Phys. Rev. Lett.
41
6
29
0
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(SIT) in a high mentally l doping, the sheet resistance seems to diverge in the zero temperature limit. Above the critical doping, the transport is universally scaled by a two-component conductance model. Below, it continuously evolves from weakly to strongly insulating behavior. The two-component conductance model suggests that a collective electronic phase separation mechanism may be responsible for this unconventional SIT behavior. For doping levels much higher than the critical doping, the resistance monotonically decreases as a function of decreasing temperature and drops to zero below a doping, the peratures, crease as the temperature is further reduced. However, for a small range of doping levels just above the critical doping, the temperature dependence of the resistance is composed of three regions [10][11][12][13]. As a function of decreasing temperature, the resistance first decreases at high temperatures, reaches a minimum at an intermediate temperature, starts to increase at lower temperatures until it reaches a local maximum, and then it drops to zero resistance below the superconducting transition temperature. Although such a re-entrant behavior is both experimentally [1][2][3][4] and theoretically [5][6][7][8][9] in homogeneously disor dimensional (2D) thin films. These studies suggest that there exists a defect-sc dominated metallic (that is, resistance being temperature-independen zero-temperature critical sheet resistance at the transition from super perconducting as T 0, otherwise they are insulating. bilayer, transforms from superconducting to insulating behavior as shown in Fig. 1. From Fig. 1, one may be tempted to estimate a zero-temperature critical sheet resistance (R S0 ), close to the pair quantum resistance ~h/4e 2 , separating superconducting from insulating samples. However, in-depth measurements below show this not to be the case.In this Letter, however, we report the results of a doping-controlled an unprecedented level of detail, and we find that important physics has bee doping, the re-entrant behavior is well described by a two-component sca . Each curve in Fig. 2 is obtained after a few minutes of (~10 -8 Torr) or ozone (~10 -6 Torr) annealing at ~400 ºC. Fig. 2 shows sheet . Above T min , all the curves exhibit metallic behavior (dR/dT > 0), and dop provides a temperature-ind resistance either switches to a metallic behavior (dR/dT > 0) when critical value or remains insulating. This is more easily seen in Fig. 2 According to this phase separation scenario, the re-entrant behavior o 5 background until superconducting islands start to couple with each other at lower

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“…In the accessible temperature range the variation of the conductance can be explained by weak localisation [27]. Fig.…”

mentioning

confidence: 99%

Electric field control of the LaAlO3/SrTiO3 interface ground state

Caviglia

Gariglio

Reyren

et al. 2008

Nature

1,234

1,316

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Weakly localized bosons

Cited by 21 publications

References 25 publications

Bose metal: Gauge-field fluctuations and scaling for field-tuned quantum phase transitions

Bose metal: Gauge-field fluctuations and scaling for field-tuned quantum phase transitions

Doping Controlled Superconductor-Insulator Transition inBi2Sr2−xLaxCaCu2O8+
Oh
¹
,
Crane
²
,
Harlingen
³

et al. 2006
Phys. Rev. Lett.
41
6
29
0
View full text Add to dashboard Cite

Electric field control of the LaAlO3/SrTiO3 interface ground state

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Weakly localized bosons

Cited by 21 publications

References 25 publications

Bose metal: Gauge-field fluctuations and scaling for field-tuned quantum phase transitions

Bose metal: Gauge-field fluctuations and scaling for field-tuned quantum phase transitions

Doping Controlled Superconductor-Insulator Transition inBi2Sr2−xLaxCaCu2O8+Oh1, Crane2, Harlingen3 et al. 2006Phys. Rev. Lett.416290View full textAdd to dashboardCite

Electric field control of the LaAlO3/SrTiO3 interface ground state

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About

Doping Controlled Superconductor-Insulator Transition inBi2Sr2−xLaxCaCu2O8+
Oh
¹
,
Crane
²
,
Harlingen
³

et al. 2006
Phys. Rev. Lett.
41
6
29
0
View full text Add to dashboard Cite