Wear-Out Mechanism of Press-Pack IGBTs Under Accelerated Aging Test

Zhan, Cao; Li, Zhu; Dai, J. G.; Zhang, Yaxin; Liu, Junjie; Liu, Zhanlei; Liu, Chenshuo; Ji, Shengchang

doi:10.1109/jestpe.2021.3085590

Cited by 13 publications

(3 citation statements)

References 16 publications

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“…In addition, the equivalent plastic deformation of the aluminium-coated IGBT chip emitter caused by temperature swing was studied based on power cycling simulation; it was found that the corners of the emitter surface of IGBT chip were with poor fatigue life [25]. Fretting wear leads to the increase of roughness, contact resistance, and contact thermal resistance, finally leading to module degradation [6,26]. The fretting wear degradation process is shown in Figure 2a.…”

Section: Fretting Wear Degradationmentioning

confidence: 99%

“…Therefore, the sensitivity of V CE-on for a single-chip module is higher than that for a multi-chip module. However, when the surface roughness of a single-chip module was changed from 0.1 to 1.2 μm, the V CE-on only increased by 2.3% [26]. Consequently, V CE-on is usually difficult to use to effectively evaluate PP-IGBTs with low package aging degrees.…”

Section: Fretting Wear Degradationmentioning

confidence: 99%

“…Fretting wear leads to an increase in the roughness of each contact surface, and directly affects the heat-dissipation performance of PP-IGBTs. R th-jc reached approximately 15% when the surface roughness ranged from 0.1 to 1.2 μm [26]. At present, a 20% increase in the R th-jc of an IGBT module is generally used as the failure standard [36,37].…”

Section: Fretting Wear Degradationmentioning

confidence: 99%

See 2 more Smart Citations

Overview of monitoring methods of press‐pack insulated gate bipolar transistor modules under different package failure modes

Liu

Yao

et al. 2022

IET Power Electronics

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Press-pack insulated gate bipolar transistor modules (PP-IGBTs) have been widely used in high-voltage and high-power-density applications, such as high-voltage direct-current (HVDC) converters, because of their advantages of low thermal resistance, double side cooling, and short-circuit failure mode. Package failure is one of the main reasons for IGBT module failure. Package condition monitoring is the key to realizing modules fault diagnosis, condition prediction, and intelligent operation and maintenance. At present, a variety of characteristic parameters, such as on voltage and junction temperature, are used in package condition monitoring. However, the characteristic parameters show different variation laws under different package degradation modes. Therefore, the relationship between package degradation modes and characteristic parameters is the key to realizing the condition monitoring, so as to improve the reliability of the power electronic system. In this paper, first, the package structure of a PP-IGBT is analyzed. Second, the mechanisms of fretting wear degradation, gate-oxide degradation, spring degradation, lid warping degradation, micro arcing degradation, short-circuit failure, and open-circuit failure are reviewed. The variation laws of characteristic parameters under each degradation and failure mode are then investigated. Finally, three difficult problems including characteristic parameter measurement, especially pressure monitoring, high-sensitivity detection, and characterization and evaluation, are discussed and analyzed.

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Section: Fretting Wear Degradationmentioning

confidence: 99%

Section: Fretting Wear Degradationmentioning

confidence: 99%