2018
DOI: 10.1039/c7cs00849j
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Wearable energy sources based on 2D materials

Abstract: Wearable energy sources are in urgent demand due to the rapid development of wearable electronics. Besides flexibility and ultrathin thickness, emerging 2D materials present certain extraordinary properties that surpass the properties of conventional materials, which make them advantageous for high-performance wearable energy sources. Here, we provide a comprehensive review of recent advances in 2D material based wearable energy sources including wearable batteries, supercapacitors, and different types of ener… Show more

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Cited by 257 publications
(150 citation statements)
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“…[1][2][3][4] The applications in increasingly extensive fields demand the discovery of novel 2D semiconductors with particular properties. [5][6][7][8][9][10][11] For example, most 2D semiconductors that have been studied possess small bandgaps, while the applications for 2D light-emitting diodes (LEDs) . [32] The degradation of some members of the layered Ga family has been studied.…”
Section: Degrades Under Illumination By Cr 3+ D-dmentioning
confidence: 99%
“…[1][2][3][4] The applications in increasingly extensive fields demand the discovery of novel 2D semiconductors with particular properties. [5][6][7][8][9][10][11] For example, most 2D semiconductors that have been studied possess small bandgaps, while the applications for 2D light-emitting diodes (LEDs) . [32] The degradation of some members of the layered Ga family has been studied.…”
Section: Degrades Under Illumination By Cr 3+ D-dmentioning
confidence: 99%
“…[13] As one kind of MOF and its analogues, metal-organic graphene analogues (MOGA) with non-zero bandgaps exhibit good electrical conductivity. There have been some reports about the M 3 (HITP) 2 (HITP = 2,3,6,7,10,11-hexaiminotriphenylene), M 3 (hexaaminobenzene) 2 (M = Ni, Cu), and so on. [8,[13][14][15][16] These films can be applied as active materials to the electronic devices and some other fields, such as field-effect transistor, photovoltaics, electronic skin, photocatalysis and biosensor.…”
Section: Doi: 101002/smll201804845mentioning
confidence: 99%
“…[6,13,14,[17][18][19][20] Nevertheless, some of the traditional but practical devices (e.g., field effect transistor (FET), light emitting diode (LED), light emitting transistor (LET), and so on) based on MOGA still remain at a very naive stage with almost no report. [1][2][3][4][5] The key technology about fabrication of large-area films with controllable thickness and orientation suppresses the development of devices, so the study on construction strategy is becoming extremely urgent. [21] While the opportunities to fabricate MOGA films have been explored in a few cases to date, there are still a lot of challenges to overcome: thin film quality, growth mechanism, controlling the defects, improving the stability, enhancing the electrical conductivity, and effectively manipulating charge carrier.…”
Section: Doi: 101002/smll201804845mentioning
confidence: 99%
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