Weaving nanostructures with site-specific ion induced bidirectional bending

Garg, Vivek; Chou, Tsengming; Liu, Amelia C. Y.; Marco, Alex de; Kamaliya, Bhaveshkumar; Qiu, S.; Mote, Rakesh G.; Fu, Jianzhong

doi:10.1039/c9na00382g

Cited by 11 publications

(17 citation statements)

References 44 publications

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“…IIB can be utilized to manufacture 3D micro-or nanostructures with various applications such as actuators 26 and structures for biological applications. 30 In this section, we investigate the application of ion-induced cantilever bending for TEM and APT specimen preparation, namely the "standout" technique, and demonstrate its feasibility, advantages, and limitations compared to the other sample preparation methods, such as the "lift-out" technique.…”

Section: Resultsmentioning

confidence: 99%

“…For practical applications, IIB can be used to fabricate different cantilever structures of various sizes, such as the 2 μm hook-shaped NW shown in Figure g, and the 4 μm NW shown in Figure h. Bending capability in two directions has inspired the fabrication of origami-like structures with controlled ion doses. ,,, The technique can produce designs of different shapes other than cantilever, such as pad-shaped specimens, which can also be raised (Figure i) and bent (Figure d) by controlled ion dosage. Because plastic deformation has occurred in the irradiated region, the bent structures are expected to maintain their final geometry without significant external forces.…”

Section: Resultsmentioning

confidence: 99%

“…Ion-induced bending (IIB) is a phenomenon whereby individual nanoscale structures are deformed by local ion beam irradiation, which has been reported on freestanding cantilevers, , nanowires, − nanotubes, sheets, and membranes . IIB provides opportunities to fabricate and engineer complicated nanostructures and has various applications , without employing additional manipulation tools.…”

Section: Introductionmentioning

confidence: 99%

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Ion-Induced Bending with Applications for High-Resolution Electron Imaging of Nanometer-Sized Samples

Zhang

Garg

Gervinskas

et al. 2021

ACS Appl. Nano Mater.

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In this work, a "stand-out" approach is proposed for the preparation of nanoscale specimens for high-resolution imaging such as transmission electron microscopy (TEM) and atom probe tomography (APT). By controlling the FIB (focused ion beam) irradiation parameters, including the ion dose, beam direction, and beam energy, the proposed approach is capable of lifting nano-or microscale specimens in situ to a desired height, driven by internal stresses. The "stand-out" specimens can be further shaped by FIB milling into needle-shaped or micropad geometries for various nanocharacterization techniques. A detailed investigation of the underlying ion-induced bending (IIB) mechanisms has been performed through both experiments and theoretical analysis of the control of molybdenum cantilevers at both ambient and cryogenic temperatures. Additional materials including copper, silicon, and steel have also been trialed, and all the results suggest IIB to be a universal phenomenon. Application of IIB has been demonstrated for site-specific TEM imaging of gold nanoparticles. Furthermore, the proposed approach also provides unique site-specific sample preparation for APT. It is expected that this approach will streamline nanoscale specimen preparation for high-resolution imaging and facilitate the development of fully automated solutions.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Ion-Induced Bending with Applications for High-Resolution Electron Imaging of Nanometer-Sized Samples

Zhang

Garg

Gervinskas

et al. 2021

ACS Appl. Nano Mater.

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“…Ion-induced bending, thus, can be utilized for realizing various 3D configurations and inducing functionalities that are otherwise not possible, for example, plasmonic metamaterials and 3D origami structures for functional applications. In our previous work, , we have also shown the weaving of nanostructures with ion-induced bending for anticipated functionalities and realization of complex 3D nanostructures toward multidisciplinary applications such as live-cell imaging, bacteria trapping, etc. In the earlier works on Ge NWs, GaAs, and ZnO, the nanostructure deformation opposite to the incoming ions was reported.…”

Section: Introductionmentioning

confidence: 99%

Controlled Manipulation and Multiscale Modeling of Suspended Silicon Nanostructures under Site-Specific Ion Irradiation

Garg

Kamaliya

Singh

et al. 2020

ACS Appl. Mater. Interfaces

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In this work, controlled bidirectional deformation of suspended nanostructures by site-specific ion irradiation is presented. Multiscale modeling of the bidirectional deformation of nanostructures by site-specific ion irradiation is presented, incorporating molecular dynamics (MD) simulations together with finite element analysis, to substantiate the bending mechanism. Strain engineering of the free-standing nanostructure is employed for controlled deformation through site-specific kiloelectronvolt ion irradiation experimentally using a focused ion beam. We report the detailed bending mechanism of suspended silicon (Si) nanostructures through ion-induced irradiations. MD simulations are presented to understand the ion–solid interactions, defects formation in the silicon nanowire. The atomic-scale simulations reveal that the ion irradiation-induced bidirectional bending occurs through the development of localized tensile–compressive stresses in the lattice due to defect formation associated with atomic displacements. With an increasing ion dose, the evolution of localized tensile to compressive stress is observed, developing the alternate bending directions calculated through finite element analysis. The findings of multiscale modeling are in excellent agreement with the bidirectional nature of bending observed through the experiments. The developed in situ approach for bidirectional controlled manipulation of nanostructures in this work can be used for nanofabrication of numerous novel three-dimensional configurations and can provide a route toward functional nanostructures and devices.

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“…In this work, a novel method for fabrication of functional 3D nanostructures through wet etching of ion implanted Si for freestanding nanostructures is developed, followed by in-situ kiloelectronvolt ion irradiation induced bidirectional bending [3] for controlled manipulation at nanoscale in a dual beam FIB-SEM microscope. Wet etching of ion implanted Si allows realization of freestanding nanostructures such as Si NW (Fig.…”

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confidence: 99%

Ion Induced Bidirectional Bending for Controlled Manipulation at Nanoscale

et al. 2019

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Ion irradiation and implantation are used extensively for inducing functionalities and engineering of nanostructures for diverse applications in the nanotechnology domain. Nanostructures, under ion irradiations, exhibit distinct transformations in contrast to their bulk counterparts due to the nanostructure dimensions comparable to collision cascade. Tensile, compressive stresses can be developed in the lattice atoms under ion irradiations, inducing plastic deformation, which in turn can be used for controlled manipulation at nanoscale, thus providing opportunities for extended functionality and strain engineering of nanostructures. Silicon (Si) nanostructures, with a high index and large band gap, offer unique light-matter interactions for optical applications such as color filtering etc. [1], [2] Conventional lithography methods such as electron beam lithography (EBL),however, consist of multiple steps requiring mask preparation, resist development, dry/wet etching etc. and the experimental realization of 3D, complex features for extended functionalities becomes especially challenging due to the design intricacy, with limitations on the feature size and aspect ratio.

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Weaving nanostructures with site-specific ion induced bidirectional bending

Abstract: Weaving nanostructures with site-specific ion induced bidirectional bending and a typical 3D folded nanostructure in the form of a mesh.

Cited by 11 publications

References 44 publications

Ion-Induced Bending with Applications for High-Resolution Electron Imaging of Nanometer-Sized Samples

Ion-Induced Bending with Applications for High-Resolution Electron Imaging of Nanometer-Sized Samples

Controlled Manipulation and Multiscale Modeling of Suspended Silicon Nanostructures under Site-Specific Ion Irradiation

Ion Induced Bidirectional Bending for Controlled Manipulation at Nanoscale

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