Weibull characteristics of n-MOSFET's with ultrathin gate oxides under FN stress and lifetime prediction

Mu, Fuchen; Xu, Mingzhen; Tan, Cheng; Duan, Xiaorong

doi:10.1016/s0026-2714(02)00007-0

Cited by 2 publications

(2 citation statements)

References 15 publications

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“…Threshold voltage is an important parameter for the performance of MOSFETs and can be used to predict life. 17,18 In Santini et al, 17 the threshold voltage degradation was modeled by a non-homogeneous gamma process. In Celaya et al, 19 the paper proposed the extended Kalman filter as a prognostics approach for power MOSFET with the condition of thermal-stress aging.…”

Section: Introductionmentioning

confidence: 99%

Remaining useful life prognostic of power metal oxide semiconductor field effect transistor based on improved particle filter algorithm

Yang

Zhen

et al. 2017

Advances in Mechanical Engineering

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The power metal oxide semiconductor field effect transistor is used extensively in analog circuits and digital circuits. However, it is also the highest failure rate component in the power electronics system. In order to avoid serious failures in the electrical system, it is necessary to predict the remaining useful life of the metal oxide semiconductor field effect transistor. With the aim to accurately predict the remaining useful life, this article presents an improved particle filter method, which can estimate the metal oxide semiconductor field effect transistor degradation degree by the on-resistance (Ron) changing data. This method is based on the particle filter algorithm, which is suitable for nonlinear and non-Gaussian system; at the same time, the proposed method can avoid the degeneracy phenomenon in the particle filter. First, the strong tracking Kalman filter is used as the importance function to update the particles with the latest observation in the sample process. The Metropolis-Hastings algorithm is used to introduce some new particles to guarantee the effective particle number in the resampling process. The experimental results indicate that the improved particle filter algorithm can obtain more effective remaining useful life prognostic than that of the particle filter. KeywordsRemaining useful life, metal oxide semiconductor field effect transistor, strong tracking Kalman filter, prognostic Date

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Section: Introductionmentioning

confidence: 99%

Remaining useful life prognostic of power metal oxide semiconductor field effect transistor based on improved particle filter algorithm

Yang

Zhen

et al. 2017

Advances in Mechanical Engineering

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“…It is recognized that dioxide films will break down after being subjected to high-constant voltage for a prolonged period of time (Mu et al, 2002). The operation at high voltage is typically found during the power MOSFET routine maneuver in automotive and industrial applications.…”

Section: Introductionmentioning

confidence: 99%

Effects of the polarity of high‐electric field stressing on power VDMOSFETs parameters

Bitar

Salloum²,

Nsouli³

2010

Microelectronics International

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If you would like to write for this, or any other Emerald publication, then please use our Emerald for Authors service information about how to choose which publication to write for and submission guidelines are available for all. Please visit www.emeraldinsight.com/authors for more information. About Emerald www.emeraldinsight.comEmerald is a global publisher linking research and practice to the benefit of society. The company manages a portfolio of more than 290 journals and over 2,350 books and book series volumes, as well as providing an extensive range of online products and additional customer resources and services.Emerald is both COUNTER 4 and TRANSFER compliant. The organization is a partner of the Committee on Publication Ethics (COPE) and also works with Portico and the LOCKSS initiative for digital archive preservation. AbstractPurpose -The purpose of this paper is to study the effects of positive and negative bias stressing on switching performance of power VDMOSFETs used in communication systems. Design/methodology/approach -A positive and a negative high-field stress are applied on the gate oxide of MOS devices and electrical characterization is performed after each period of stress, a comparison is presented. Findings -Compared results between the two types of stress show that certain doses of stress can increase the device speed. The underlying changes of the threshold voltage under these two types of stress are referred to as the variation of the gate oxide-trapped charge and interface trap densities. Originality/value -This paper presents new and original experiments run over a number of metal-oxide semiconductor field effect transistor devices to compare the effects of the direction of the applied field on the degradation and the reliability of these structures.

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Weibull characteristics of n-MOSFET's with ultrathin gate oxides under FN stress and lifetime prediction

Cited by 2 publications

References 15 publications

Remaining useful life prognostic of power metal oxide semiconductor field effect transistor based on improved particle filter algorithm

Remaining useful life prognostic of power metal oxide semiconductor field effect transistor based on improved particle filter algorithm

Effects of the polarity of high‐electric field stressing on power VDMOSFETs parameters

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