Well-coupling and band-mixing effects on differential gain of coupled quantum wells

Kucharczyk, M.; Wartak, Marek S.

doi:10.1002/(sici)1098-2760(19990520)21:4<282::aid-mop15>3.0.co;2-j

Cited by 5 publications

(3 citation statements)

References 7 publications

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“…It is known that coupling between quantum wells significantly affects the operation of multiple quantum well (MQW) devices. Theoretical analysis of coupling effects on such properties as optical gain, differential gain and electric field induced refractive index have been performed for GaAs/AlGaAs based devices [5][6][7][8]. It was shown that well coupling substantially shifts the spectral gain peak and band mixing reduces the gain peak.…”

Section: Introductionmentioning

confidence: 99%

The effect of well coupling on effective masses in the InGaAsN material system

Wartak¹,

Weetman²

2007

J. Phys.: Condens. Matter

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Section: Introductionmentioning

confidence: 99%

The effect of well coupling on effective masses in the InGaAsN material system

Wartak¹,

Weetman²

2007

J. Phys.: Condens. Matter

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“…The wavefunctions in the parabolic approximation and Poisson's equation were solved numerically using a finite-different method. For the LK Hamiltonian approximation, a plane-wave expansion method was used [7]. In Figures 1 and 2 the results of modal gain and differential gain are shown as functions of barrier width for three values of carrier concentration.…”

Section: Resultsmentioning

confidence: 99%

“…In particular, considerable attention has been devoted to the effects associated with tunneling effects in coupled quantum wells [5][6][7]. It was shown that well coupling enhances the differential gain for narrow quantum wells (3 nm) for barriers within the range of 2-5 nm, depending upon carrier concentration.…”

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confidence: 99%

Modulation bandwidth of semiconductor lasers based on coupled quantum wells

Wartak

Weetman

2004

Micro & Optical Tech Letters

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The effect of well coupling on differential gain and maximum‐modulation bandwidth for semiconductor lasers based on coupled quantum wells is analyzed using the K‐factor method. We determine differential gain in coupled quantum wells within the self‐consistent solution of the Poisson, Schroedinger, and 4 × 4 Luttinger–Kohn equations. The multiple‐body effects of bandgap renormalization, coulombic scattering interactions, and a nonMarkovian distribution are also included. The analysis has been performed for coupled wells at 1.55 μm in an InGaAsP/InP lattice‐matched system grown in the [001] direction. Our results suggest that in order to maximize modulation bandwidth and differential gain, one should design structures with barrier widths larger than 40 Å. © 2004 Wiley Periodicals, Inc. Microwave Opt Technol Lett 42: 272–274, 2004; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.20275

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Numerical studies of optical gain of coupled quantum wells based on InGaAsN material system

Wartak

Weetman

2008

Physica Status Solidi (b)

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The optical gain of two coupled quantum wells fabricated from a new material system of InGaAsN/GaAs is studied by applying 10‐band k·p Hamiltonian matrix. A self‐consistent scheme which involves simultaneous solution of matrix Schrödinger and Poisson equations was applied. The optical gain spectra were obtained and analyzed for various values of nitrogen composition and barrier widths. They show optimum values for particular barrier width, although the variations are not significant. However, the magnitude of gain peak undergoes significant changes when varying nitrogen composition. The determined parameters and their variations can play significant role in designing practical structures based on InGaAsN/GaAs material systems. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Well-coupling and band-mixing effects on differential gain of coupled quantum wells

Cited by 5 publications

References 7 publications

The effect of well coupling on effective masses in the InGaAsN material system

The effect of well coupling on effective masses in the InGaAsN material system

Modulation bandwidth of semiconductor lasers based on coupled quantum wells

Numerical studies of optical gain of coupled quantum wells based on InGaAsN material system

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