Well-ordered arranging of Ag nanoparticles in SiO2/Si by ion implantation

Kondo, Takahiro; Minakuchi, Y.; Kawaguchi, Koichi; Isshiki, Takaaki; Nishio, Koji; Sasase, Masato; Yamamoto, S.; Nishiyama, Fumitaka

doi:10.1016/j.apsusc.2012.04.001

Cited by 4 publications

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“…Os métodos físicos incluem a ablação por laser, deposição química a vapor, fluidos supercríticos dentre outros [39]. A implantação iônica também tem sido utilizada para gerar camada de nanocompósito alguns nanômetros abaixo da superfície do substrato [12,[40][41][42][43][44][45][46][47][48][49][50][51][52][53][54]. Como já mencionado no Capítulo 2, a formação das nanopartículas metálicas se dá espontaneamente e pode ser explicada pela ocorrência de concentração dos átomos metálicos acima do limite de solubilidade no substrato implantado, levando à nucleação e crescimento das nanopartículas metálicas [27].…”

Section: Resultsunclassified

Testes e aplicação de um novo implantador iônico.

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2,2 x 10 16 átomos/cm 2 , que é a dose máxima para a qual o material continua a ser um nanocompósito, e para a condutividade de saturação foi σ 0 = 480 S/m. A dose de percolação obtida foi φ c = 0,84 x 10 16 átomos/cm 2 , que é a dose abaixo da qual o material tem a mesma condutividade que a matriz isolante. O expoente crítico obtido foi t = 1,4 e, como a condição t < 2 é satisfeita, o processo de condutividade se dá devido a percolação, sendo o tunelamento desprezível.Palavras-chave: implantação iônica, implantador invertido, TRIDYN, nanocompósito, resistividade, percolação. ABSTRACTThis work describes an ion implanter in terms of characterization and application. The text is divided in three chapters that are briefly presented below.The first chapter describes in detail a new type of implanter called inverted implanter.In this chapter is considered my contribution in the development and characterization of the inverted implanter. The optimization of part of the electronic circuits, and development and construction of other circuits are given in details. A characterization of the implanter by the maximization the ion beam is presented, where is carried out a systematic study through the variation of parameters such as extractor potential, plasma gun current (cathodic arc) and others. Finally, it presents a mapping of the ion beam density at the sample holder of the inverted implanter.The second chapter discusses the neutrality of the ion beam of the inverted implanter.A neutral beam allows implantation into insulating samples without positive charges accumulation, which would lead sample at a different potential than expected. The effective energy evaluation was carried out studying the implantation profiles by conductive atomic force microscopy (AFM-C) and transmission electron microscopy (TEM), and compared with numerical simulations performed by TRIDYN program. The results suggest that the ion beam isn't neutral.In the third chapter, the inverted implanter was used for alumina surface modification, generating a nanocomposite layer just below the surface, formed by titanium nanoparticles in alumina matrix. The nanoparticles formation occurs spontaneously and can be explained by the occurrence of metal atom concentration above the solubility limit in the impalnted substrate, leading to nucleation and growth of metal nanoparticles. Characterization by TEM was used for direct visualization of the nanoparticles what presented dimensions of about 20 nm. Simulations using the TRIDYN program were performed, generating depth profiles of titanium ions implanted into the alumina substrate, which showed excellent agreement with the depth profile obtained by RBS (Rutherford Backscattering Spectrometry). Resistivity measurements were obtained from the composite layer, in situ, as function of implanted dose.Using theoretical percolation models, it was possible to determine the saturation dose φ 0 = 2,2 x 10 16 atoms/cm 2 , that is the maximum dose for which the material remains a nanocomposite, and the saturation conductiv...

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