[ 6 ] and phenyl-C71-butyric acid methyl ester (PC 70 BM). [ 2 , 7 ] Despite promising results, the performance of PTB7:PC 70 BM solar cells is limited by the thin active layer, [ 3 ] carrier selectivity at the contacts, [ 8 ] and rapid degradation of the active layer and contacts caused by exposure to ambient oxygen [9][10][11] and water vapor. [ 12 ] Although inverted solar cell architectures have demonstrated high effi ciencies combined with relatively good stability, age-induced performance loss in high performance PTB7 solar cell architectures [ 2 ] has been reported, and the mechanisms are currently not well understood.Identifying the origins of performance loss in solar cells is challenging because it involves differentiating between interfacial phenomena and bulk properties. [ 13 ] Frequency resolved optoelectronic techniques such as impedance spectroscopy [ 14 ] and intensity modulated photocurrent spectroscopy (IMPS) [ 15 ] are useful in discriminating between electronic processes in the active layer and at contact interfaces, and correlating these with device performance. In this work, we combine these techniques with device modeling to identify key loss processes and aging mechanisms in state-of-the-art PTB7-based inverted solar cells incorporating a V 2 O 5 hole transport layer. After prolonged exposure to ambient conditions no change in the open circuit voltage ( V oc ) or short circuit current density ( J sc ) was observed. An s-shape is initially observed in the current density -voltage ( J -V) characteristic, which can be reversed by cycling through the J -V curve under illumination. Subsequently, a small drop in the fi ll factor (FF) from the original value of 0.7 to 0.61 was observed. With impedance spectroscopy, we demonstrate that changes to the device interfaces are completely reversible, and that performance losses related to the FF are due to degradation of the organic active layer. The IMPS analysis reveals age-related trap formation in the active layer. Interestingly, the high density of traps does not appear to have a signifi cant effect on performance. We attribute this phenomenon to slow carrier thermalization times.
ResultsThe device structure is depicted in Figure 1 a. The PTB7:PC 70 BM active layer was sandwiched between an Indium tin oxide (ITO)/ poly [(9,9-bis(3-( N , N -dimethylamino)propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctylfl uorene)] (PFN) [ 16 ] electron extracting contact