Well parameters of two‐dimensional electron gas in Al<sub>0.88</sub>In<sub>0.12</sub>N/AlN/GaN/AlN heterostructures grown by MOCVD

Tasli, P.; Li̇şesi̇vdi̇n, S. B.; Yıldız, Abdullah; Kasap, M.; Arslan, Engin; Özçelik, Süleyman; Özbay, Ekmel

doi:10.1002/crat.200900534

Cited by 6 publications

(3 citation statements)

References 29 publications

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“…InGaN, GaN and AlGaN layers are grown on c-(001)-oriented sapphire substrate. Before the epitaxial growth operation, sapphire substrate is exposed to temperature of 1100 °C in nitrogen atmosphere for 10 min to remove the oxide layer on the surface of it [8,9]. Trimethylgallium (TMGa), trimethylaluminum (TMAl), trimethylindium (TMIn) and ammonia (NH 3 ) compound chemical reactions are gained from Ga, Al, In and N sources, respectively.…”

Section: Methodsmentioning

confidence: 99%

On the elastic properties of INGAN/GAN LED structures

et al. 2019

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In this study, three InGaN/GaN light-emitting diode (LED) structures with five periods are investigated grown by metal organic chemical vapor deposition (MOCVD) technique. During growth of these three samples, active layer growth temperatures are adjusted as 650, 667 and 700 °C. These structures are grown on sapphire (Al 2 O 3 ) wafer as InGaN/GaN multiquantum wells (MQWs) between n-GaN and p-AlGaN + GaN contact layers. During growth, pressure and flux ratio of all sources are kept constant for all samples. Only temperature of InGaN active layer is changed. These structures are analyzed with high-resolution X-ray diffraction (HR-XRD) technique. Their surface morphologies are investigated with atomic force microscopy (AFM). Reciprocal space mapping (RSM) is made different from classical HR-XRD analyses. Using this method, mixed peaks belonging to InGaN, AlGaN and GaN layers are seen more clearly and their full width at half maximum (FWHM) values is determined with better accuracy. With FWHM gained from RSM and Williamson-Hall (W-H) method based on universal elastic coefficients of the material, particle size D (nm), uniform stress σ (GPa), strain ε and anisotropic energy density u (kJ m −3 ) parameters for the samples are calculated. The results are compared with literature. On the other hand, to have an idea about the accuracy of the results AFM images are examined. Parameters calculated showed differences but it is seen that the largest particle size is gained for GaN and the smallest is gained for AlGaN. For all parameters, it is seen that they increase for GaN layer and decrease for AlGaN layer with increasing temperature. For InGaN layer parameters, they showed both increasing and decreasing or decreasing and increasing behavior harmonically with an increase in temperature. Results showed that they are compatible with literature. Results gained from Scherrer and W-H are very near to each other.

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Section: Methodsmentioning

confidence: 99%

On the elastic properties of INGAN/GAN LED structures

et al. 2019

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“…Further developments by several research groups led to what is known as mobility spectrum analysis (MSA), in which the generated spectra are optimized to quantitatively agree with the experimentally derived magnetic field-dependent Hall and resistivity results [2][3][4][5][6][7]. Recently, MSA has been utilized to study carrier transport in a variety of semiconductor nanostructures and devices [8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27].…”

Section: Introductionmentioning

confidence: 99%

Intrinsic broadening of the mobility spectrum of bulk n-type GaAs

et al. 2014

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Modern devices consisting of multiple semiconductor layers often result in the population of numerous distinct carrier species. Conventional Hall measurements at a single-magnetic-field strength provide only a weighted average of the electron mobility and carrier concentration of a semiconductor structure and, therefore, are of limited use for the extraction of carrier transport information. In recent years, mobility spectrum analysis techniques, which have been developed to extract a mobility spectrum from magnetic field-dependent conductivitytensor measurements, have been applied in the analysis of carrier conductivity mechanisms of numerous semiconductor structures and devices. Currently there is a severe lack of reported studies on theoretical calculations of the mobility distribution of semiconductor structures or devices. In addition, the majority of reports on experimental mobility spectrum analysis are of complex, multi layered structures such as type-II superlattices, and the interpretation of the mobility spectra has been difficult. Therefore, a good understanding of the mobility spectrum has yet to be developed. For example, it is often assumed that distinct peaks of a mobility spectrum result from fundamentally different conduction mechanisms such as the bulk and surface conduction of narrow-bandgap semiconductors. In this article, we present calculations of the electron mobility distribution of bulk GaAs, which predict the existence of multiple Content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. mobility spectrum peaks that result from electron conductivity in the Γ conduction band. This report serves as an important and simple test case upon which experimentally measured mobility spectra can be compared. It also presents insight into the general nature of electron mobility distributions.

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“…AlN is attracting increasing research alertness because of its piezoelectric properties, for fabrication of high frequency surface acoustic wave devices using different substrates such as sapphire, SiC and Si substrates [1]. The utilization of an AlN buffer layer in GaN heteroepitaxy improved the film quality.…”

Section: Introductionmentioning

confidence: 99%

High-Resolution TEM Observation of AlN/GaN Grown on Si Substrates

Chuah

Mahyudin

Hasan

et al. 2011

AMM

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A high-quality crack-free AlN cap layer on GaN layer has been achieved using an AlN buffer layer directly grown on a silicon substrate at high temperature by radio frequency (RF) plasma-assisted molecular beam epitaxy. A two dimensional (2D) growth process guide to AlN cap layer of high grade crystal quality. The nucleation and the growth dynamics have been studied by in situ reflection high energy electron diffraction (RHEED) and ex situ by high resolution transmission electron microscopy (HR-TEM). The microstructure was investigated by energy-dispersive X-ray spectroscopy (EDX). It was disclosed that AlN is single crystalline with low defect. High densities of V-shaped pits were not detected at the interface between AlN and GaN layers. Contradictory the earlier reported V-shaped defects in nitride-based alloys; these V-shaped pits were condensed on top of the AlN layer because of H2 etching of the surface when a high temperature growth discontinuity between AlN and GaN layers.

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Well parameters of two‐dimensional electron gas in Al_0.88In_0.12N/AlN/GaN/AlN heterostructures grown by MOCVD

Cited by 6 publications

References 29 publications

On the elastic properties of INGAN/GAN LED structures

On the elastic properties of INGAN/GAN LED structures

Intrinsic broadening of the mobility spectrum of bulk n-type GaAs

High-Resolution TEM Observation of AlN/GaN Grown on Si Substrates

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Well parameters of two‐dimensional electron gas in Al0.88In0.12N/AlN/GaN/AlN heterostructures grown by MOCVD

Cited by 6 publications

References 29 publications

On the elastic properties of INGAN/GAN LED structures

On the elastic properties of INGAN/GAN LED structures

Intrinsic broadening of the mobility spectrum of bulk n-type GaAs

High-Resolution TEM Observation of AlN/GaN Grown on Si Substrates

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Well parameters of two‐dimensional electron gas in Al_0.88In_0.12N/AlN/GaN/AlN heterostructures grown by MOCVD