Well width‐dependent electron Raman scattering in ZnS/CdSe cylindrical quantum dot quantum well

Abstract

Electron Raman scattering (ERS) is investigated in ZnS/CdSe cylindrical quantum dot quantum well (QDQW). The differential cross section (DCS) is calculated as a function of the scattering frequency and the sizes of QDQW. Single parabolic conduction and valence bands are assumed. Different scattering configurations are discussed and the selection rules for the processes are also studied. Singularities in the spectrum are found and interpreted. The ERS studied here can be used to provide direct information about the electron band structure of these systems.

Recent advances in linear and non‐linear Raman spectroscopy. Part III

“…A study of the strain and wetting phenomena in porous silicon by Raman scattering was undertaken by Ferrara et al [156] Electron Raman scattering was investigated in ZnS/CdSe cylindrical quantum wells by Zhong and Liu. [157] ZnSe/GaAs interfaces were studied by El-Brolossy and Talaat [158] who employed nonresonance micro-Raman spectroscopy to observe photogenerated plasmon-longitudinal optical (LO) coupled modes. In a paper by Guillaume et al, [159] an assignment of the optical phonons in mellerite (NiS) from single-crystal polarised Raman spectroscopy is provided.…”