2003
DOI: 10.1088/0960-1317/13/4/310
|View full text |Cite
|
Sign up to set email alerts
|

Wet anisotropic etching for fluidic 1D nanochannels

Abstract: In this paper a method is proposed to fabricate channels for fluidic applications with a depth in the nanometer range. Channels with smooth and straight sidewalls are constructed with the help of micromachining technology by etching shallow trenches into 110 silicon using native oxide as a mask material and OPD resist developer as the etchant. Sub-50 nm deep fluidic channels are formed after bonding the nanopatterned wafers with silicon or borofloat-glass wafers. The nanofabrication process is significantly si… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

0
80
0

Year Published

2004
2004
2017
2017

Publication Types

Select...
7
3

Relationship

0
10

Authors

Journals

citations
Cited by 96 publications
(80 citation statements)
references
References 15 publications
0
80
0
Order By: Relevance
“…At present, the methods for fabricating nanochannels include bulk nanomachining and wafer bonding [2,3], surface nanomachining [4], buried channel technology [5], and nanoimprint lithography [6][7][8]. Nanochannels that are 50 nm deep and 5 m wide [2,3], 20-100 nm deep and 0.5-20 m wide [4], and 10 nm deep and 50 nm wide [6] have been demonstrated. Using the former three methods, nanochannels can reach to nano-level in 1D.…”
Section: Introductionmentioning
confidence: 99%
“…At present, the methods for fabricating nanochannels include bulk nanomachining and wafer bonding [2,3], surface nanomachining [4], buried channel technology [5], and nanoimprint lithography [6][7][8]. Nanochannels that are 50 nm deep and 5 m wide [2,3], 20-100 nm deep and 0.5-20 m wide [4], and 10 nm deep and 50 nm wide [6] have been demonstrated. Using the former three methods, nanochannels can reach to nano-level in 1D.…”
Section: Introductionmentioning
confidence: 99%
“…The best masking layer for HNA solution is LPCVD Si 3 N 4 , which has an etching rate of 1-10 nm/min. 44 The orientation-dependent etching of silicon 78 relies on the selective etching of different crystallographic planes. A number of etchants have been used for orientation-dependent etching of silicon, the best known being aqueous potassium hydroxide (KOH) solution, most likely due to the high etching ratio of about 400 between the (100) and (111) crystallographic planes.…”
Section: Wet Etchingmentioning
confidence: 99%
“…Such methods include (i) bulk nanomachining and wafer bonding, where the nano dimension is defined by the etching depth in the bulk of, say, a glass or a silicon substrate (see, e.g., [67]), and (ii) surface nanomachining, where the nanodimension arises from a very thin sacrificial layer deposited on a solid substrate and covered with a (thicker) film (see, e.g., [68]). Both methods lead to nanochannels that have their smallest dimension perpendicular to the substrate (i.e., running parallel to the substrate surface); however, by combining them with deep-UV photolithography, laser interference lithography, or nanoimprint lithography (NIL) [69,70], it also becomes possible to control the lateral dimension (i.e., the dimension parallel to the substrate surface) down to several tens of nanometers.…”
Section: Nanochannel Fabricationmentioning
confidence: 99%