Wet Chemical Etching of InP for Cleaning Applications

Cuypers, Daniel; Gendt, Stefan De; Arnauts, Sophia; Paulussen, Kris; Dorp, Dennis H. van

doi:10.1149/2.020304jss

Cited by 27 publications

(40 citation statements)

References 23 publications

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“…If concentrated HCl solutions (e.g. > 4 M) are efficient for the removal of InP oxides (see figures 4 and 5), they lead to a significant modification of the surface morphology -RMS values slightly increase compare to the reference ones -and the appearance of boat-like shape of the etch pits is observed as already reported (4). Reducing the HCl concentration (HCl:H 2 O 1:10) allows removing the InPO x and InO x species without damaging the surface (RMS values are similar to the reference ones).…”

Section: Wet Chemical Cleaning Followed By In Situ Treatmentsupporting

confidence: 73%

“…Several challenges have to be taken up in order to develop a full cleaning technology on III-V materials. Ideally, this cleaning technology should be compatible with the Si industry restrictions and should allow the removal of metals, particles and native oxides with a controlled etching of the surface and a limited impact in terms of surface morphology, roughness and stoichiometry (4).…”

Section: Introductionmentioning

confidence: 99%

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Cleaning of InGaAs and InP Layers for Nanoelectronics and Photonics Contact Technology Applications

et al. 2015

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International audienceInGaAs and InP layers were treated by using Ar and He direct plasmas coupled with wet chemical treatments. InP surfaces are more sensitive to the various treatments than the InGaAs ones. Suitable and efficient treatments have been proposed to offer a good compromise between impact on surface and native oxide removal. We have demonstrated that concentrated HCl solution cleanings followed by He direct plasma treatment are efficient for the removal of InGaAs native oxides whereas He plasma exposure combined to a diluted HCl solution cleaning is more suitable for InP surfaces

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Section: Wet Chemical Cleaning Followed By In Situ Treatmentsupporting

confidence: 73%

Section: Introductionmentioning

confidence: 99%

Cleaning of InGaAs and InP Layers for Nanoelectronics and Photonics Contact Technology Applications

et al. 2015

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“…InP + 6h + + 6H 2 O → In(OH) 3 + P(OH) 3 + 6H + [2] InP + 8h + + 8H 2 O → In(OH) 3 + P(OH) 5 + 8H + [3] In the presence of HCl the oxide dissolves and the semiconductor etches. 19 In addition, H 2 O 2 is formed during electroless photoetching which can also contribute to the oxide formation observed.…”

Section: Resultsmentioning

confidence: 99%

Wet Chemical Etching of InP for Cleaning Applications

Dorp

Cuypers

Arnauts

et al. 2013

ECS J. Solid State Sci. Technol.

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The wet chemical etching of InP and its native oxide has been studied in HCl and H 2 SO 4 solution to create oxide-free surfaces. The (100) InP surface is not etched in ≤2 M HCl and ≤6 M H 2 SO 4 . As the v etch <0.1 nm/min for these concentrations, the native oxide after OFOD treatment can be effectively removed without significantly etching the surface, as confirmed by contact angle measurements, ellipsometry and X-ray photoelectron spectroscopy. STM and AFM measurements showed that after OFOD treatment and subsequent oxide removal very smooth surfaces are achieved due to the creation of atomic terraces. The size of these terraces can be increased up to micron-size in 6 M H 2 SO 4 . Furthermore, it was shown that in presence of oxygen, n-type InP is photoetched/oxidized during wet processing. Last, the anisotropy in etching is discussed for InP in 2 M HCl and 2 M H 2 SO 4 .For the past and current technology node, transistors in integrated circuits are fabricated on silicon substrates, and in some cases, SiGe alloys are used. In order to meet the future requirements imposed by the scaling roadmap, the next generation of transistors (i.e. the 7 nm node and beyond) will be based on high mobility III-V compound semiconductors. 1,2 To be cost effective, the III-V materials will be integrated on Si substrates. In part A of this paper, we show a possible integration route for such a technology; a Quantum Well based III-V transistor using InP buffer and InGaAs channel layers. 3 The manufacture of transistors consists of many different processing steps, which involve multiple exposures to chemical solutions. The goal of these wet treatments is to obtain a well-defined surface, (i.e. free of contaminants and stoichiometric), essential for obtaining good interfacial properties and, consequently, device performance. 4 There are different ways of preparing III-V surfaces for subsequent processing steps: ion sputtering followed by high temperature annealing, atomic hydrogen cleaning, sulfur passivation, and wetchemical cleaning. 5 Wet-chemical cleaning offers an effective and practical cleaning method for semiconductor surfaces. 6 In the case of III-V compound semiconductors special care should be taken due to the possible formation of highly toxic hydrides during low pH processing. Additionally, anisotropy in etching may be expected, 7,8 which leads to significant surface roughening. In part A of this paper, we propose an oxide formation/oxide dissolution (OFOD) model that prevents hydride formation and allows for smooth etching. 3 In a first step the semiconductor is oxidized by a strong oxidizing agent in solution and, subsequently, the (hydr)oxides formed are dissolved by the acid. Due to the presence of a strong oxidizing agent in solution no dissolved hydrides are expected. This approach, was developed for cleaning of (100) oriented InP buffer layers after a chemo-mechanicalpolishing (CMP) step, and can, in principle, be used for other III-V semiconductors. After OFOD treatment a native oxide is present. In order to p...

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“…It is clear that NH 4 OH treatment helps achieve a lower CA, thus resulting in higher hydrophilicity and better bondability of the wafer surface . After NH 4 OH treatment, the surfaces exhibit hydrophilicity, indicating an increase in the oxide (hydrophilic substance) on the surface of InP wafer.…”

Section: Resultsmentioning

confidence: 99%

Effect of NH₄OH Treatment on Plasma‐Assisted InP/Al₂O₃/SOI Direct Wafer Bonding

Gong

Sun

Xiong

et al. 2018

Physica Status Solidi (a)

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The effect of NH 4 OH treatment on InP/Al 2 O 3 /SOI direct wafer bonding is investigated. The atomic force microscope (AFM) and water contact angle (CA) results reveal a decrease in root-mean-square (RMS) surface roughness and CA of the NH 4 OH-treated InP wafer. X-ray photoelectron spectroscopy (XPS) analysis is carried out to ascertain the chemical composition of the bonding surfaces. It is found that NH 4 OH treatment followed by plasma activation increases the content of oxides on the surface of InP wafer. Based on these results, it is concluded that NH 4 OH treatment helps increase hydrophilicity and contact area of the bonding surface, thus contributing to the success of plasma-assisted InP/Al 2 O 3 /SOI wafer bonding.

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Wet Chemical Etching of InP for Cleaning Applications

Cited by 27 publications

References 23 publications

Cleaning of InGaAs and InP Layers for Nanoelectronics and Photonics Contact Technology Applications

Cleaning of InGaAs and InP Layers for Nanoelectronics and Photonics Contact Technology Applications

Wet Chemical Etching of InP for Cleaning Applications

Effect of NH₄OH Treatment on Plasma‐Assisted InP/Al₂O₃/SOI Direct Wafer Bonding

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Wet Chemical Etching of InP for Cleaning Applications

Cited by 27 publications

References 23 publications

Cleaning of InGaAs and InP Layers for Nanoelectronics and Photonics Contact Technology Applications

Cleaning of InGaAs and InP Layers for Nanoelectronics and Photonics Contact Technology Applications

Wet Chemical Etching of InP for Cleaning Applications

Effect of NH4OH Treatment on Plasma‐Assisted InP/Al2O3/SOI Direct Wafer Bonding

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Product

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Effect of NH₄OH Treatment on Plasma‐Assisted InP/Al₂O₃/SOI Direct Wafer Bonding