Wet Chemical Etching of Si, Si[sub 1−x]Ge[sub x], and Ge in HF:H[sub 2]O[sub 2]:CH[sub 3]COOH

Holländer, B.; Buca, D.; Mantl, S.; Hartmann, J.-M.

doi:10.1149/1.3382944

Cited by 32 publications

(23 citation statements)

References 17 publications

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“…(6%HF/30%H 2 O 2 / 99.8%CH 3 COOH) solution (BPA). This etching solution is known to selectively etch Si 1-x Ge x alloys over pure Si [21,24,28,29]. Two important parameters of chemical selective wet etching have also been checked: ageing time of etching solution and structure collapse during/after the wet etching.…”

Section: Resultsmentioning

confidence: 99%

Selective Chemical Wet Etching of Si_0.8Ge_0.2/Si Multilayer

Kil¹,

Yang²,

Kang³

et al. 2013

JSTS:Journal of Semiconductor Technology and Science

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Abstract-We investigate the effect of the ageing time and etching time on the etching rate of SiGe mixed etching solution, namely 1 vp HF (6%), 2 vp H 2 O 2 (30%) and 3 vp CH 3 COOH (99.8%). For this etching solution, we found that the etch rate of SiGe layer is saturated after the ageing time of 72 hours, and the selectivity of Si 0.8 Ge 0.2 layer and Si layer is 20:1 at ageing time of 72 hours. The collapse was appeared at the etching time of 9min with etching solution of after saturation ageing time.

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Section: Resultsmentioning

confidence: 99%

Selective Chemical Wet Etching of Si_0.8Ge_0.2/Si Multilayer

Kil¹,

Yang²,

Kang³

et al. 2013

JSTS:Journal of Semiconductor Technology and Science

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“…In many advanced vertical transistor structures, multilayer of SiGe/Si is implemented. Since it is needed to selectively etch either Si or SiGe layers, a lot of efforts were made to use HF:H2O2:CH3COOH mixtures to etch SiGe selectively to Si [143][144][145] or to use tetramethylammonium hydroxide (TMAH) based to remove Si from SiGe [146] and a formulated semi-aqueous reagent to selectively etch SiGe to Ge [147].…”

Section: Gate Processmentioning

confidence: 99%

The Challenges of Advanced CMOS Process from 2D to 3D

Radamson

Zhang

et al. 2017

Applied Sciences

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Abstract:The architecture, size and density of metal oxide field effect transistors (MOSFETs) as unit bricks in integrated circuits (ICs) have constantly changed during the past five decades. The driving force for such scientific and technological development is to reduce the production price, power consumption and faster carrier transport in the transistor channel. Therefore, many challenges and difficulties have been merged in the processing of transistors which have to be dealed and solved. This article highlights the transition from 2D planar MOSFETs to 3D fin field effective transistors (FinFETs) and then presents how the process flow faces different technological challenges. The discussions contain nano-scaled patterning and process issues related to gate and (source/drain) S/D formation as well as integration of III-V materials for high carrier mobility in channel for future FinFETs.

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“…1). Можно отметить, что полученные экспериментальные данные для раствора 1 : 2 : 3 близки к данным, приведенным в работе [10].…”

Section: селективное травление слоев Si Ge и Sigeunclassified

Селективное травление Si, SiGe и Ge и использование его для повышения эффективности кремниевых солнечных элементов

Baidakova¹,

Verbus²,

Morozova³

et al. 2017

Физика И Техника Полупроводников

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В работе для растворов КОН и HF : H 2 O 2 : CH 3 COOH исследована селективность травления SiGe-структур в зависимости от их состава. Полученные результаты предложено использовать для создания на кремнии субмикронного рельефа поверхности за счет селективного травления структур с самоформирующимися наноостровками Ge(Si). В предлагаемом подходе наноостровки Ge(Si) служат маской для селективного травления Si в водном растворе KOH с добавлением изопропилового спирта, а затем удаляются с поверхности селективным травлением в HF : H 2 O 2 : CH 3 COOH. Экспериментально показано, что подобный подход позволяет создавать на кремнии субмикронный рельеф поверхности, который приводит к суще-ственному уменьшению коэффициента отражения в широком спектральном диапазоне. Полагается, что предлагаемый метод создания рельефа поверхности может быть использован для повышения эффективности тонкопленочных солнечных элементов на основе кристаллического кремния.

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Wet Chemical Etching of Si, Si[sub 1−x]Ge[sub x], and Ge in HF:H[sub 2]O[sub 2]:CH[sub 3]COOH

Cited by 32 publications

References 17 publications

Selective Chemical Wet Etching of Si_0.8Ge_0.2/Si Multilayer

Selective Chemical Wet Etching of Si_0.8Ge_0.2/Si Multilayer

The Challenges of Advanced CMOS Process from 2D to 3D

Селективное травление Si, SiGe и Ge и использование его для повышения эффективности кремниевых солнечных элементов

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Wet Chemical Etching of Si, Si[sub 1−x]Ge[sub x], and Ge in HF:H[sub 2]O[sub 2]:CH[sub 3]COOH

Cited by 32 publications

References 17 publications

Selective Chemical Wet Etching of Si0.8Ge0.2/Si Multilayer

Selective Chemical Wet Etching of Si0.8Ge0.2/Si Multilayer

The Challenges of Advanced CMOS Process from 2D to 3D

Селективное травление Si, SiGe и Ge и использование его для повышения эффективности кремниевых солнечных элементов

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Selective Chemical Wet Etching of Si_0.8Ge_0.2/Si Multilayer

Selective Chemical Wet Etching of Si_0.8Ge_0.2/Si Multilayer