Wet chemical etching of the (111)In and % MathType!MTEF!2!1!+- % feaagaart1ev2aaatCvAUfKttLearuqr1ngBPrgarmWu51MyVXgatC % vAUfeBSjuyZL2yd9gzLbvyNv2CaeHbd9wDYLwzYbItLDharyavP1wz % ZbItLDhis9wBH5garqqtubsr4rNCHbGeaGqiVu0Je9sqqrpepC0xbb % L8F4rqqrFfpeea0xe9Lq-Jc9vqaqpepm0xbba9pwe9Q8fs0-yqaqpe % pae9pg0FirpepeKkFr0xfr-xfr-xb9adbaqaaeGaciGaaiaabeqaam % aaeaqbaaGcbaWaaeWaaeaacuaIXaqmgaqeaiqbigdaXyaaraGafGym % aeJbaebaaiaawIcacaGLPaaaaaa!3F6C! $$ \left( {\bar 1\bar 1\bar 1} \right) $$ Sb planes of InSb substrates