Wet-Chemical Treatment of Si[sub 3]N[sub 4] Surfaces Studied Using Infrared Attenuated Total Reflection Spectroscopy

Bermudez, V. M.

doi:10.1149/1.1851056

Cited by 24 publications

(25 citation statements)

References 65 publications

(110 reference statements)

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“…To test this idea, concentrated HCl was introduced into the pore to decrease the pH to 1 ([H + ] = 100 mM). HCl was chosen because it supposedly does not etch silicon nitride with a low oxide content 43 . Unlike the current measured in electrolyte at pH 6 (Supplementary Fig.…”

Section: Resultsmentioning

confidence: 99%

Measurements of the size and correlations between ions using an electrolytic point contact

et al. 2019

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The size of an ion affects everything from the structure of water to life itself. In this report, to gauge their size, ions dissolved in water are forced electrically through a sub-nanometer-diameter pore spanning a thin membrane and the current is measured. The measurements reveal an ion-selective conductance that vanishes in pores <0.24 nm in diameter—the size of a water molecule—indicating that permeating ions have a grossly distorted hydration shell. Analysis of the current noise power spectral density exposes a threshold, below which the noise is independent of current, and beyond which it increases quadratically. This dependence proves that the spectral density, which is uncorrelated below threshold, becomes correlated above it. The onset of correlations for Li + , Mg 2+ , Na + and K + -ions extrapolates to pore diameters of 0.13 ± 0.11 nm, 0.16 ± 0.11 nm, 0.22 ± 0.11 nm and 0.25 ± 0.11 nm, respectively—consonant with diameters at which the conductance vanishes and consistent with ions moving through the sub-nanopore with distorted hydration shells in a correlated way.

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Section: Resultsmentioning

confidence: 99%

Measurements of the size and correlations between ions using an electrolytic point contact

et al. 2019

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“…We note that, in contrast to our observations, previous studies have reported that 1-octadecene can chemisorb onto SiO 2 and Si 3 N 4 surfaces, [14,15] However, a subsequent spectroscopic study showed that those results might be due to the existence of SiH x sites after surface treatment, leaving the surface with reactive groups like those present on bare silicon instead of only SiO 2 or Si 3 N 4 . [16] In our study, we used piranha treatment before HF etching and this hydroxylated the hydrophilic dielectric surface. Consequently, less SiH x may exist on the SiO 2 (or Si 3 N 4 or HfO 2 ) surfaces after this treatment.…”

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confidence: 99%

Chemistry for Positive Pattern Transfer Using Area‐Selective Atomic Layer Deposition

Chen¹,

Bent²

2006

Advanced Materials

154

146

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This paper demonstrates a new chemically selective method for achieving high-resolution, area-selective atomic layer deposition (ALD) of Pt thin films on dielectrics. By utilizing the intrinsically selective adsorption behavior of 1-octadecene, a monolayer resist is attached only to the hydride-terminated silicon surfaces, but not to the oxide surfaces, of an oxide-patterned silicon substrate. Subsequently, a Pt thin film is selectively deposited only onto the non-deactivated oxide regions by ALD.ALD is a powerful thin-film growth technique that uses sequential self-terminating surface reaction steps to afford subnanometer control of the growth process. [1,2] It has received significant attention recently as a method for depositing highquality thin films of insulators, semiconductors, and metals. The surface-reaction-controlled deposition mechanism ensures precise control of the film thickness, excellent conformality, and very good uniformity over large areas. [2] In addition, many ALD processes are very sensitive to the conditions of the substrate surfaces. As a consequence, the surface functional groups can be manipulated prior to ALD to carry out an area-selective ALD process. Instead of a conventional subtractive-patterning strategy, area-selective ALD is an additive process, in which material is deposited only where needed. Figure 1 illustrates dual pathways for achieving area-selective ALD on a patterned SiO 2 /Si surface. Patterned SiO 2 /Si is an excellent starting substrate, because conventional photolithography can be used to form an oxide pattern of arbitrary design on silicon with a size down to the submicrometer scale. We will show that with the appropriate choice of chemistry, this single patterned substrate can be used to achieve either positive or negative pattern transfer using area-selective ALD. The overall processes of negative and positive patterning require two chemically selective steps. These two methods are complementary.The negative-patterning method shown in Figure 1 has been introduced previously.[3] In the prior work, octadecyltrichlorosilane (ODTS) was selectively attached to a SiO 2 surface as shown, leaving the hydride-terminated silicon surface unreacted. Subsequently, HfO 2 was deposited selectively by using the ALD process only on the hydride regions.[3]In this work, we utilize hydrosilylation chemistry of 1-alkenes on hydride-terminated silicon. The reaction is selective, leading to the adsorption of 1-alkene on the hydride surface but not on the oxide surface of a patterned silicon substrate. Subsequently, a thin film is selectively deposited only onto the oxide regions by ALD.We have focused on the deposition of Pt for the positivepatterning area-selective ALD method presented here. Pt is a promising electrode material for dynamic random-access memories because of its high chemical stability in an oxidizing atmosphere and its excellent electrical properties. [4,5] It is also a promising gate-metal candidate owing to its high work function (5.6 eV) and compatibility with high-...

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“…Tailoring the pH buffering effect is considered to be key in boosting up cell metabolism without damaging the cells, as ammonia elution beyond a given (unknown so far and different for different types of cells) concentration threshold could be hard for the cells to metabolize. An alternative route to control elution was tried by tuning only the outer surface chemistry: the A-Si 3 N 4 sample was treated with acetic acid because there are proofs that treatments in concentrated acetic acid can be used to remove (by esterification) the Si-OH silanol groups that form on the surface of Si 3 N 4 [ 38 ]. The silanol groups are then restored in aqueous environments, making the surface of the A-Si 3 N 4 powders more reactive in the initial stages of hydrolysis; The T-Si 3 N 4 sample was obtained by treating the powder at a relatively low temperature (200 °C) in order to produce a thin SiO 2 layer on the outer surface, with the ultimate goal of reducing the reactivity of the powder surface [ 39 ] without affecting the bulk of the material.…”

Section: Discussionmentioning

confidence: 99%

Tailoring Silicon Nitride Surface Chemistry for Facilitating Odontogenic Differentiation of Rat Dental Pulp Cells

Gong

Honda

Adachi

et al. 2021

IJMS

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Silicon nitride (Si3N4) can facilitate bone formation; hence, it is used as a biomaterial in orthopedics. Nevertheless, its usability for dentistry is unexplored. The aim of the present study was to investigate the effect of Si3N4 granules for the proliferation and odontogenic differentiation of rat dental pulp cells (rDPCs). Four different types of Si3N4 granules were prepared, which underwent different treatments to form pristine as-synthesized Si3N4, chemically treated Si3N4, thermally treated Si3N4, and Si3N4 sintered with 3 wt.% yttrium oxide (Y2O3). rDPCs were cultured on or around the Si3N4 granular beds. Compared with the other three types of Si3N4 granules, the sintered Si3N4 granules significantly promoted cellular attachment, upregulated the expression of odontogenic marker genes (Dentin Matrix Acidic Phosphoprotein 1 and Dentin Sialophosphoprotein) in the early phase, and enhanced the formation of mineralization nodules. Furthermore, the water contact angle of sintered Si3N4 was also greatly increased to 40°. These results suggest that the sintering process for Si3N4 with Y2O3 positively altered the surface properties of pristine as-synthesized Si3N4 granules, thereby facilitating the odontogenic differentiation of rDPCs. Thus, the introduction of a sintering treatment for Si3N4 granules is likely to facilitate their use in the clinical application of dentistry.

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Wet-Chemical Treatment of Si[sub 3]N[sub 4] Surfaces Studied Using Infrared Attenuated Total Reflection Spectroscopy

Cited by 24 publications

References 65 publications

Measurements of the size and correlations between ions using an electrolytic point contact

Measurements of the size and correlations between ions using an electrolytic point contact

Chemistry for Positive Pattern Transfer Using Area‐Selective Atomic Layer Deposition

Tailoring Silicon Nitride Surface Chemistry for Facilitating Odontogenic Differentiation of Rat Dental Pulp Cells

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