Wet Clean Applications in Porous Low‐<i>k</i>Patterning Processes

Le, Quoc Toan; Vereecke, Guy; Struyf, Herbert; Kesters, Els; Baklanov, Mikhaı̈l R.

doi:10.1002/9781119963677.ch4

Cited by 2 publications

(2 citation statements)

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“…In case of the latter, the huge increase in accessible surface area leads to integration related damage, such as material modification occurring during exposure to plasma and wet chemical processes. 5,[24][25][26][27][28] Chemically, such damage typically corresponds to a loss of carbon groups and the formation of Si-OH units, see Figure 1. As a result, the insulator electrical properties, such as dielectric constant, leakage current and breakdown voltage are significantly compromised.…”

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confidence: 99%

Toward Successful Integration of Porous Low-k Materials: Strategies Addressing Plasma Damage

Lionti

Volksen

Magbitang

et al. 2014

ECS J. Solid State Sci. Technol.

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The increasing sensitivity of porous low dielectric constant materials to process damage constitutes a major roadblock to their implementation in back-end-of-the-line (BEOL) wiring structures for advanced technology nodes. In the early 2000s and in anticipation to future low-k related integration challenges, the semiconductor industry started to investigate the possibility to repair or prevent this damage. It is remarkable that the most disruptive solutions proposed today are inspired from the work initiated more than 10 years ago. In this review we first describe the accepted mechanisms for plasma damage, followed by a quick summary of the methods used to quantify its extent on both blanket films and patterned structures. We then report on the past and current strategies developed to mitigate the plasma damage of porous, low-k materials during damascene integration processes.

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confidence: 99%

Toward Successful Integration of Porous Low-k Materials: Strategies Addressing Plasma Damage

Lionti

Volksen

Magbitang

et al. 2014

ECS J. Solid State Sci. Technol.

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show abstract

“…Considering the faster F-accumulation at the low-k-Si interface in light of the observed decrease of the interfacial energy with HF dip we infer the existence of a driving force for the interfacial F − build-up. The driving force might be due to a hydrophilic layer containing OH − groups which have been reported [30] to be eliminated and replaced by F − as a major reaction route for SiO 2 dissolution in HF solution with pH N 1.5.…”

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confidence: 99%