Wet-oxygen corrosion resistance and mechanism of bi-layer Mullite/SiC coating for Cf/SiC composites

Adsorption on 3C-SiC surfaces in chemical vapor deposition process of CH3SiCl3–H2 system: a first-principles study

“…Cubic silicon carbide (3C-SiC) is known to be one of the most potential wide-bandgap semiconductor materials, with good mechanical properties, chemical stability, electrical properties, thermal conductivity, a low thermal expansion coefficient, a high thermal conductivity, and various other properties. It has been considered to be the preferred material for semiconductor devices and thermal-protective coatings [1,2]. Among the many methods for preparing silicon carbide films, chemical vapor deposition (CVD) has become one of the main methods due to the high purity and high uniformity of the prepared products.…”