Wet-recess process optimization of a bottom antireflective coating for the via-first dual-damascene scheme

Brakensiek, Nickolas L.; Kidd, Brian; Washburn, Carlton; Murphy, Earnest C.

doi:10.1117/12.533817

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2007

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“…1). [6][7][8][9][10][11][12][13][14][15][16] Consequently, it is conceivable that the process may require two layers, namely, an inorganic or organic BARC having a high absorbance with respect to that of light or radiation, and the gap fill materials for obtaining planariza-tion. The gap fill materials for lithography described herein are a filler or a planarizing material.…”

Section: Introductionmentioning

confidence: 99%

Characterization of Gap Fill Materials for Planarizing Substrate in Via-First Dual Damascene Lithography Process

Takei¹,

Sakaida²,

Shinjo³

2007

jjap

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This study focuses on the characterization of gap fill materials for advanced ArF lithography process. The gap fill materials have the planarization property on an irregular substrate such as the patterned holes and trenches to increase the depth of focus and resolution. After planarizing the substrate surface, the gap fill materials are used to avoid the dry etching damage in the dielectric materials. In the characterization of gap fill materials with an excellent planarization properties for lithography, two key factors were identified, namely the specific relationship between the cross-link reaction group concentration of the polymers and the via filling performance, and the specific relationship between the solvent used in the polymer solution and the via filling performance.

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