Wet-silylation Process for X-ray and EUV Lithographies.

Oizumi, Hiroaki; Yamashita, Yoshio; Ogawa, Taro; Ohtani, Masayasu

doi:10.2494/photopolymer.9.627

Cited by 4 publications

(1 citation statement)

References 9 publications

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“…[21,28,30,[32][33][34][35][36][37][38] Three main TLI approaches have been investigated for EUV lithography, namely top surface imaging (TSI), [22,27,28,30,32,[39][40][41][42] bilayer resists [5,43,44] and ultra thin single layer resists over hardmask (UTR). [5,28,[32][33][34][35] In TSI, the uppermost layer of either the exposed or unexposed regions can be selectively silylated by gaseous or liquid silanes.…”

Section: Multi-layer Resistsmentioning

confidence: 99%

The convergence of top-down and bottom-up nanofabrication: formation of 3D structures

Yang

Dai

et al. 2005

SPIE Proceedings

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Lithography and the processes associated with it are the backbone of the nanotechnology revolution. Several developments are occurring simultaneously: a drive to reduce minimum feature size leading to advances in microelectronics, the use of lithographically patterned structures to prepare devices for photonics, biotechnology and other forms of nanotechnology and finally the drive to create three-dimensional (3D) structures for device and new materials creation. Thus the controlled formation of nanometer scale structures in two and three dimensions is of increasing interest in many applications. This paper will overview new approaches for the construction of small-scale structures using methods generally considered as next generation lithography. New approaches derived from two photon processes for the formation of complex images and the development of patterned structures will be described. Finally in the production of 3D patterns, the possible role of self-assembly coupled to lithography will be examined. Photodefinable block copolymers with erodable microstructures have been successfully used to form mesoporous materials and will be discussed.

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Section: Multi-layer Resistsmentioning

confidence: 99%

The convergence of top-down and bottom-up nanofabrication: formation of 3D structures

Yang

Dai

et al. 2005

SPIE Proceedings

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Recent progress in high resolution lithography

Bratton

Yang

Dai

et al. 2006

Polymers for Advanced Techs

249

199

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The nanotechnology revolution of the past decade owes much to the science of lithography, an umbrella term which encompasses everything from conventional photolithography to “unconventional” soft lithography and the self‐assembly of block polymers. In this review, some of the recent advances in lithography are summarized with special reference to the microelectronics industry. The next generation photolithography, two‐photon lithography, step‐and‐flash imprint lithography and nanofabrication using block copolymers are covered, in an attempt to describe more recent work in this vibrant and active field of research. Copyright © 2006 John Wiley & Sons, Ltd.

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Challenges to 0.1 µm Resolution Capability in ArF Single Layer Resist Process with Weak Resolution Enhancement Techniques

Takahashi

Kishimura

Ohfuji

et al. 1998

Jpn. J. Appl. Phys.

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We examine the resolution capability of the ArF single layer resist process with weak resolution enhancement techniques. To do this, annular illumination and an attenuated phase-shifting mask are applied to a high-resolution ArF single layer resist. Such weak resolution enhancement techniques are more widely applied than strong resolution enhancement techniques. The experimentally obtained data are correlated with simulated aerial image contrasts to evaluate the lithographic performance under various optical conditions. The aerial image contrast is greatly enhanced by applying larger partial coherence in annular illumination. It is quite effective, especially for features smaller than 0.13 µm lines and spaces. By applying the optimum condition in annular illumination, 0.10 µm lines and spaces can be obtained even without using a phase-shifting mask. Furthermore, from the process margin simulated with the measured resist dissolution rates, it is expected that the ArF single layer resist process with weak resolution enhancement can be applied in the fabrication of 0.1 µm-rule devices.

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Wet-silylation Process for X-ray and EUV Lithographies.

Cited by 4 publications

References 9 publications

The convergence of top-down and bottom-up nanofabrication: formation of 3D structures

The convergence of top-down and bottom-up nanofabrication: formation of 3D structures

Recent progress in high resolution lithography

Challenges to 0.1 µm Resolution Capability in ArF Single Layer Resist Process with Weak Resolution Enhancement Techniques

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