Wet thermal oxidation of AlAsSb alloys lattice matched to InP

Legay, P.; Petit, P.; Roux, G. Le; Köhl, A.; Dias, Ivan Frederico Lupiano; Juhel, M.; Quillec, M.

doi:10.1063/1.365335

Cited by 16 publications

(13 citation statements)

References 12 publications

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“…In some cases, the Sb layer was reported to be at the upper interface, 12,16 while others reported Sb segregation to the lower interface. 17 Salesse reported that wet oxidation using water:methanol mixtures can suppress or eliminate the Sb segregation layer in n-type AlAs 0.56 Sb 0.44 lattice matched to InP. 18 The same was not true for p-type AlAs 0.56 Sb 0.44 , while unintentionally doped epilayers were not investigated.…”

Section: Introductionmentioning

confidence: 98%

Antimony segregation in the oxidation of AlAsSb interlayers

Andrews

Horn

Mates

et al. 2003

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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The lateral wet oxidation of strained AlAsSb was studied. AlAs 0.80 Sb 0.20 interlayers were grown on a GaAs substrate and capped with a lattice-matched In 0.25 Ga 0.75 As layer. The AlAsSb was oxidized between 350 and 450°C. Oxidation temperatures Ͼ400°C resulted in poor surface morphology and delamination. Oxidation of thicker AlAsSb interlayers (hϷ2000 Å) resulted in metallic Sb layers forming between the AlO x and the semiconductor interfaces. The remaining Sb metal at the oxidesemiconductor interface was ϳ15% oxidized. Lateral wet oxidation of thinner AlAsSb interlayers (hр500 Å) resulted in Sb inclusions at the oxide-semiconductor interface. The Sb inclusions were 1.5-2.0 m in diameter and the inclusion thickness was approximately equal to the AlAsSb layer thickness. Methanol (CH 3 OH) was added to the water mixture with the intent to stabilize the otherwise unstable stibine (SbH 3 ) such that Sb could be removed from the oxidizing structure. However, methanol addition resulted in a decreased oxidation rate and a change in the Sb precipitate morphology. The Sb inclusions observed in pure water oxidation changed to a Sb finger-like morphology with increasing methanol concentration. The Sb fingers were 1.0-2.0 m wide and as long as the oxidation depth. Oxidation of AlAsSb interlayers hр200 Å were limited by the incorporation of Ga from the substrate and capping layer into the oxidation layer. Doping the oxidation AlAsSb interlayer 1ϫ10 18 cm Ϫ3 n type ͑Si or Te͒ did not result in any improvement in Sb segregation.

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Section: Introductionmentioning

confidence: 98%

Antimony segregation in the oxidation of AlAsSb interlayers

Andrews

Horn

Mates

et al. 2003

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…The activation energy of k reaction for AlAsSb lattice matched to InP is 1.51 eV, which is higher than the value of 1.18 eV reported in the literature. 9 This may be due to the fact that the oxidation samples in this study had no deposited dielectrics ͑Si 3 N 4 or SiO 2 ͒ on top. The high activation energy associated with the high reaction rate for AlAs 1Ϫx Sb x oxidation may be due to the difficulty of removing low-vaporpressure Sb-related by-products of oxidation.…”

mentioning

confidence: 97%

“…Addition of Sb to AlAs results in a large increase in the oxidation rate as demonstrated in the case of AlAs 0.56 Sb 0.44 lattice matched to InP. 8,9 Another important consequence of oxidation of Sb-containing layers is the segregation and formation of a uniform elemental Sb layer at the upper interface of the oxide. The effect of the Sb/As ratio on oxidation rates of unstrained AlAs 1Ϫx Sb x oxidation layers with high-Sb content (xу0.44) has been investigated before.…”

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confidence: 99%

Effect of Sb composition on lateral oxidation rates in AlAs1−xSbx

Chavarkar

Mishra

Mathis

et al. 2000

Applied Physics Letters

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Lateral oxidation kinetics of AlAsSb and related alloys lattice matched to InPWe demonstrate the effect of antimony ͑Sb͒ composition on the oxidation mechanism of AlAs 1Ϫx Sb x (xϽ0.21) layers on GaAs substrates. It has been demonstrated that addition of a group-III element like Ga to AlAs slows the rate of oxidation. In contrast, addition of a group-V element like Sb to AlAs changes the oxidation mechanism in more than one way. The oxidation rate increases with Sb addition, and the oxidation reaction changes from a diffusion-limited mechanism to a reaction-rate-limited mechanism at higher oxidation temperatures. This is attributed to the increase in the permeability of the oxide. Nonuniform segregation of Sb is observed upon oxidation. The activation energy of the oxidation reaction-rate constant initially decreases with the Sb composition upto 10%, further Sb addition increases the activation energy.

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“…From the earliest experiments, AlAsSb oxidation seemed attractive ͑low temperature, high oxidation rate with accurate control, and good oxide resistivity͒. 4,5 However, during the oxidation process, segregation of metallic elements ͑e.g., As and Sb͒ occurs and forms a conductive interfacial layer which leads to increased strains in the oxidized structure. 4,6 With regard to the oxidation of AlInAs, we have shown that high temperatures are needed ͑2 m/h at 520°C͒, 5 and this results in the oxidation of other materials such as InP or GaInAs.…”

Section: Introductionmentioning

confidence: 99%

“…4,5 However, during the oxidation process, segregation of metallic elements ͑e.g., As and Sb͒ occurs and forms a conductive interfacial layer which leads to increased strains in the oxidized structure. 4,6 With regard to the oxidation of AlInAs, we have shown that high temperatures are needed ͑2 m/h at 520°C͒, 5 and this results in the oxidation of other materials such as InP or GaInAs. Despite these high temperatures, Caracci et al 7 and Krames et al 8 succeeded in realizing long ridge wavelength lasers.…”

Section: Introductionmentioning

confidence: 99%